We investigated the evolution of microstructures and the electrical properties of CeO2 thin films deposited by the reactive DC magnetron sputtering method on the (100) silicon substrate upon annealing in the O2 gas ambient. The CeO2 thin films deposited at 300°C were polycrystalline. After annealing in ambient O2 gas, the crystallinity of the CeO2 film was improved and becomes more dense with annealing time and temperature. The maximum accumulation capacitance of CeO2 thin film annealed above 700°C in the ambient O2 gas decreased due to the growth of the interfacial SiO2 layer between CeO2 film and silicon substrate by the diffusion of oxidizing species through CeO2 thin film from the ambient gas.
Bibliographical noteFunding Information:
This research was financially supported by Samsung Electronics Co. Ltd.
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Atomic and Molecular Physics, and Optics
- Condensed Matter Physics
- Surfaces, Coatings and Films
- Electrical and Electronic Engineering