A study on the microstructure and electrical properties of CeO2 thin films for gate dielectric applications

Jung Ho Yoo, Seok Woo Nam, Sung Kwan Kang, Yun Ha Jeong, Dae Hong Ko, Ja Hum Ku, Hoo Jeong Lee

Research output: Contribution to journalArticle

25 Citations (Scopus)

Abstract

We investigated the evolution of microstructures and the electrical properties of CeO2 thin films deposited by the reactive DC magnetron sputtering method on the (100) silicon substrate upon annealing in the O2 gas ambient. The CeO2 thin films deposited at 300°C were polycrystalline. After annealing in ambient O2 gas, the crystallinity of the CeO2 film was improved and becomes more dense with annealing time and temperature. The maximum accumulation capacitance of CeO2 thin film annealed above 700°C in the ambient O2 gas decreased due to the growth of the interfacial SiO2 layer between CeO2 film and silicon substrate by the diffusion of oxidizing species through CeO2 thin film from the ambient gas.

Original languageEnglish
Pages (from-to)187-190
Number of pages4
JournalMicroelectronic Engineering
Volume56
Issue number1-2
DOIs
Publication statusPublished - 2001 May 1

Fingerprint

Gate dielectrics
Electric properties
Gases
electrical properties
Thin films
microstructure
Microstructure
Silicon
Annealing
thin films
gases
annealing
silicon
Substrates
Magnetron sputtering
crystallinity
magnetron sputtering
Capacitance
capacitance
direct current

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics
  • Surfaces, Coatings and Films
  • Electrical and Electronic Engineering

Cite this

Yoo, Jung Ho ; Nam, Seok Woo ; Kang, Sung Kwan ; Jeong, Yun Ha ; Ko, Dae Hong ; Ku, Ja Hum ; Lee, Hoo Jeong. / A study on the microstructure and electrical properties of CeO2 thin films for gate dielectric applications. In: Microelectronic Engineering. 2001 ; Vol. 56, No. 1-2. pp. 187-190.
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A study on the microstructure and electrical properties of CeO2 thin films for gate dielectric applications. / Yoo, Jung Ho; Nam, Seok Woo; Kang, Sung Kwan; Jeong, Yun Ha; Ko, Dae Hong; Ku, Ja Hum; Lee, Hoo Jeong.

In: Microelectronic Engineering, Vol. 56, No. 1-2, 01.05.2001, p. 187-190.

Research output: Contribution to journalArticle

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AU - Yoo, Jung Ho

AU - Nam, Seok Woo

AU - Kang, Sung Kwan

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AU - Ku, Ja Hum

AU - Lee, Hoo Jeong

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AB - We investigated the evolution of microstructures and the electrical properties of CeO2 thin films deposited by the reactive DC magnetron sputtering method on the (100) silicon substrate upon annealing in the O2 gas ambient. The CeO2 thin films deposited at 300°C were polycrystalline. After annealing in ambient O2 gas, the crystallinity of the CeO2 film was improved and becomes more dense with annealing time and temperature. The maximum accumulation capacitance of CeO2 thin film annealed above 700°C in the ambient O2 gas decreased due to the growth of the interfacial SiO2 layer between CeO2 film and silicon substrate by the diffusion of oxidizing species through CeO2 thin film from the ambient gas.

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