A study on the resistive switching of La0.7Sr0.3MnO3 film using spectromicroscopy

Hong Sub Lee, Kyung Mun Kang, Woo Je Han, Tae Won Lee, Chang Sun Park, Yong June Choi, Hyung Ho Park

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)


Resistive random access memory (ReRAM) is a promising candidate for next generation nonvolatile memory. La0. 7Sr0. 3. MnO3 (LSMO) of perovskite manganite family has a great deal of attention for ReRAM material because it makes resistive switching (RS) of interface type without a "forming process". However, the full understanding of the electronic structure and RS mechanism of LSMO remains a challenging problem. Therefore, this study performed spectromicroscopic analysis to understand the relation between the change of electronic structure and RS characteristic. The results demonstrated the electron occupation by field-induced oxygen vacancies and strong correlation effects.

Original languageEnglish
Title of host publicationAdvance Materials Development and Applied Mechanics
PublisherTrans Tech Publications Ltd
Number of pages4
ISBN (Print)9783038351771
Publication statusPublished - 2014
Event3rd International Conference on Advanced Materials Design and Mechanics, ICAMDM 2014 - , Singapore
Duration: 2014 May 232014 May 24

Publication series

NameApplied Mechanics and Materials
ISSN (Print)1660-9336
ISSN (Electronic)1662-7482


Other3rd International Conference on Advanced Materials Design and Mechanics, ICAMDM 2014

All Science Journal Classification (ASJC) codes

  • Engineering(all)


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