A study on the structural distribution of Se-passivated GaAs surface

Ji Wan Kim, Seung Hoon Sa, Min Gu Kang, Hyung-Ho Park

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

The structural distribution, surface composition and bonding states of HCl- and Na2Se/NH4OH-treated GaAs surfaces were investigated using angle-resolved X-ray photoelectron spectroscopy and low energy electron diffraction (LEED). The passivated GaAs surface by Na2Se/ NH4OH solution showed a formation of As - Se bond. Compared with HCl-treatment, more pronounced oscillation of photoelectron intensities of Ga and As was observed with the Na2Se/NH4OH-treated GaAs surface according to the polar angle of GaAs surface. Through LEED analysis, the passivated GaAs surface showed a (2 x 1)-reconstructed structure with regular distribution of As - Se bonds. After in situ annealing under ultra high vacuum condition, bond exchange from As - Se to Ga - Se occurred. After annealing, Se also showed pronounced oscillation of photoelectron intensity according to the polar angle of GaAs. This could be explained by the anion exchange reaction of Se with As in the lattice site or by the occupation of As vacant site formed during annealing to a depth of three atomic layers.

Original languageEnglish
Pages (from-to)305-311
Number of pages7
JournalThin Solid Films
Volume332
Issue number1-2
DOIs
Publication statusPublished - 1998 Nov 2

Fingerprint

Low energy electron diffraction
Annealing
Photoelectrons
annealing
photoelectrons
electron diffraction
Ultrahigh vacuum
oscillations
Surface structure
Ion exchange
Negative ions
X ray photoelectron spectroscopy
occupation
ultrahigh vacuum
Anions
gallium arsenide
photoelectron spectroscopy
anions
energy
x rays

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry

Cite this

Kim, Ji Wan ; Sa, Seung Hoon ; Kang, Min Gu ; Park, Hyung-Ho. / A study on the structural distribution of Se-passivated GaAs surface. In: Thin Solid Films. 1998 ; Vol. 332, No. 1-2. pp. 305-311.
@article{8b6bd2a248744c679ed65044428e3e98,
title = "A study on the structural distribution of Se-passivated GaAs surface",
abstract = "The structural distribution, surface composition and bonding states of HCl- and Na2Se/NH4OH-treated GaAs surfaces were investigated using angle-resolved X-ray photoelectron spectroscopy and low energy electron diffraction (LEED). The passivated GaAs surface by Na2Se/ NH4OH solution showed a formation of As - Se bond. Compared with HCl-treatment, more pronounced oscillation of photoelectron intensities of Ga and As was observed with the Na2Se/NH4OH-treated GaAs surface according to the polar angle of GaAs surface. Through LEED analysis, the passivated GaAs surface showed a (2 x 1)-reconstructed structure with regular distribution of As - Se bonds. After in situ annealing under ultra high vacuum condition, bond exchange from As - Se to Ga - Se occurred. After annealing, Se also showed pronounced oscillation of photoelectron intensity according to the polar angle of GaAs. This could be explained by the anion exchange reaction of Se with As in the lattice site or by the occupation of As vacant site formed during annealing to a depth of three atomic layers.",
author = "Kim, {Ji Wan} and Sa, {Seung Hoon} and Kang, {Min Gu} and Hyung-Ho Park",
year = "1998",
month = "11",
day = "2",
doi = "10.1016/S0040-6090(98)01099-2",
language = "English",
volume = "332",
pages = "305--311",
journal = "Thin Solid Films",
issn = "0040-6090",
publisher = "Elsevier",
number = "1-2",

}

A study on the structural distribution of Se-passivated GaAs surface. / Kim, Ji Wan; Sa, Seung Hoon; Kang, Min Gu; Park, Hyung-Ho.

In: Thin Solid Films, Vol. 332, No. 1-2, 02.11.1998, p. 305-311.

Research output: Contribution to journalArticle

TY - JOUR

T1 - A study on the structural distribution of Se-passivated GaAs surface

AU - Kim, Ji Wan

AU - Sa, Seung Hoon

AU - Kang, Min Gu

AU - Park, Hyung-Ho

PY - 1998/11/2

Y1 - 1998/11/2

N2 - The structural distribution, surface composition and bonding states of HCl- and Na2Se/NH4OH-treated GaAs surfaces were investigated using angle-resolved X-ray photoelectron spectroscopy and low energy electron diffraction (LEED). The passivated GaAs surface by Na2Se/ NH4OH solution showed a formation of As - Se bond. Compared with HCl-treatment, more pronounced oscillation of photoelectron intensities of Ga and As was observed with the Na2Se/NH4OH-treated GaAs surface according to the polar angle of GaAs surface. Through LEED analysis, the passivated GaAs surface showed a (2 x 1)-reconstructed structure with regular distribution of As - Se bonds. After in situ annealing under ultra high vacuum condition, bond exchange from As - Se to Ga - Se occurred. After annealing, Se also showed pronounced oscillation of photoelectron intensity according to the polar angle of GaAs. This could be explained by the anion exchange reaction of Se with As in the lattice site or by the occupation of As vacant site formed during annealing to a depth of three atomic layers.

AB - The structural distribution, surface composition and bonding states of HCl- and Na2Se/NH4OH-treated GaAs surfaces were investigated using angle-resolved X-ray photoelectron spectroscopy and low energy electron diffraction (LEED). The passivated GaAs surface by Na2Se/ NH4OH solution showed a formation of As - Se bond. Compared with HCl-treatment, more pronounced oscillation of photoelectron intensities of Ga and As was observed with the Na2Se/NH4OH-treated GaAs surface according to the polar angle of GaAs surface. Through LEED analysis, the passivated GaAs surface showed a (2 x 1)-reconstructed structure with regular distribution of As - Se bonds. After in situ annealing under ultra high vacuum condition, bond exchange from As - Se to Ga - Se occurred. After annealing, Se also showed pronounced oscillation of photoelectron intensity according to the polar angle of GaAs. This could be explained by the anion exchange reaction of Se with As in the lattice site or by the occupation of As vacant site formed during annealing to a depth of three atomic layers.

UR - http://www.scopus.com/inward/record.url?scp=0032476348&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0032476348&partnerID=8YFLogxK

U2 - 10.1016/S0040-6090(98)01099-2

DO - 10.1016/S0040-6090(98)01099-2

M3 - Article

AN - SCOPUS:0032476348

VL - 332

SP - 305

EP - 311

JO - Thin Solid Films

JF - Thin Solid Films

SN - 0040-6090

IS - 1-2

ER -