A study on the thermal stabilities of the NiGe and Ni1-xTa x Ge systems

K. Park, B. H. Lee, D. Lee, D. H. Ko, K. H. Kwak, C. W. Yang, H. Kim

Research output: Contribution to journalArticle

27 Citations (Scopus)

Abstract

The thermal stabilities of the Ni-silicide and Ni-germanide systems were compared, and that of the Ni0.9 Ta0.1 Ge alloy system was also studied. Although the NiSi film had a stable low sheet resistance (Rs) in the formation temperature range from 300 to 650°C, NiGe exhibited an abrupt increase of Rs from 500°C due to the severe agglomeration. The doping of the Ni film with Ta slightly improved the thermal stability of NiGe due to the formation of a Ta-rich layer on top of NiGe and subsequent reduction of the surface-free energy of NiGe with outside ambient. During the additional thermal annealing after NiGe formation, the germanide films formed from Ni-Ta alloy also exhibited slightly improved thermal stability characteristics as compared to the pure Ni-germanide system.

Original languageEnglish
Pages (from-to)H557-H560
JournalJournal of the Electrochemical Society
Volume154
Issue number7
DOIs
Publication statusPublished - 2007 Jun 11

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Thermodynamic stability
Sheet resistance
Free energy
Agglomeration
Doping (additives)
Annealing
Temperature
Hot Temperature

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Renewable Energy, Sustainability and the Environment
  • Surfaces, Coatings and Films
  • Electrochemistry
  • Materials Chemistry

Cite this

Park, K. ; Lee, B. H. ; Lee, D. ; Ko, D. H. ; Kwak, K. H. ; Yang, C. W. ; Kim, H. / A study on the thermal stabilities of the NiGe and Ni1-xTa x Ge systems. In: Journal of the Electrochemical Society. 2007 ; Vol. 154, No. 7. pp. H557-H560.
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A study on the thermal stabilities of the NiGe and Ni1-xTa x Ge systems. / Park, K.; Lee, B. H.; Lee, D.; Ko, D. H.; Kwak, K. H.; Yang, C. W.; Kim, H.

In: Journal of the Electrochemical Society, Vol. 154, No. 7, 11.06.2007, p. H557-H560.

Research output: Contribution to journalArticle

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AU - Park, K.

AU - Lee, B. H.

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AB - The thermal stabilities of the Ni-silicide and Ni-germanide systems were compared, and that of the Ni0.9 Ta0.1 Ge alloy system was also studied. Although the NiSi film had a stable low sheet resistance (Rs) in the formation temperature range from 300 to 650°C, NiGe exhibited an abrupt increase of Rs from 500°C due to the severe agglomeration. The doping of the Ni film with Ta slightly improved the thermal stability of NiGe due to the formation of a Ta-rich layer on top of NiGe and subsequent reduction of the surface-free energy of NiGe with outside ambient. During the additional thermal annealing after NiGe formation, the germanide films formed from Ni-Ta alloy also exhibited slightly improved thermal stability characteristics as compared to the pure Ni-germanide system.

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