A study on the thermal stability of silicon carbide whiskers on growth temperature

W. S. Park, B. J. Joo, Doo Jin Choi, H. D. Kim

Research output: Contribution to journalArticle

4 Citations (Scopus)

Abstract

The thermal stability of silicon carbide whiskers, which were grown by chemical vapor infiltration (CVI) method without any metallic catalyst, was analyzed. It was found that the thermal stability of the whiskers is one of the most important characteristics for applications in severe operation condition such as diesel particulate filters (DPF) of filters for incinerator and electronic power stations. The whiskers formed at over 1300°C were heavily faulted due to the rapid growth rate. It was observed that the stacking faults, as defects, reduce the activation energy for evaporation, so that evaporation occurred in spite of the relatively low temperature of annealing of 1100°C.

Original languageEnglish
Pages (from-to)5529-5531
Number of pages3
JournalJournal of Materials Science
Volume40
Issue number20
DOIs
Publication statusPublished - 2005 Oct 1

Fingerprint

Growth temperature
Silicon carbide
Evaporation
Thermodynamic stability
Chemical vapor infiltration
Refuse incinerators
Stacking faults
Power electronics
Activation energy
Annealing
Defects
Catalysts
Temperature
silicon carbide

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Mechanics of Materials
  • Mechanical Engineering

Cite this

Park, W. S. ; Joo, B. J. ; Choi, Doo Jin ; Kim, H. D. / A study on the thermal stability of silicon carbide whiskers on growth temperature. In: Journal of Materials Science. 2005 ; Vol. 40, No. 20. pp. 5529-5531.
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A study on the thermal stability of silicon carbide whiskers on growth temperature. / Park, W. S.; Joo, B. J.; Choi, Doo Jin; Kim, H. D.

In: Journal of Materials Science, Vol. 40, No. 20, 01.10.2005, p. 5529-5531.

Research output: Contribution to journalArticle

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