A study on thermal stability improvement in Ni germanide/p-Ge using Co interlayer for Ge MOSFETs

Geon Ho Shin, Jeyoung Kim, Meng Li, Jeongchan Lee, Ga Won Lee, Jungwoo Oh, Hi Deok Lee

Research output: Contribution to journalArticle

Abstract

Nickel germanide (NiGe) is one of the most promising alloy materials for source/drain (S/D) of Ge MOSFETs. However, NiGe has limited thermal stability up to 450°C which is a challenge for fabrication of Ge MOSFETs. In this paper, a novel method is proposed to improve the thermal stability of NiGe using Co interlayer. As a result, we found that the thermal stability of NiGe was improved from 450°C to 570°C by using the proposed Co interlayer. Furthermore, we found that current-voltage (I-V) characteristic was improved a little by using Co/Ni/TiN structure after post-annealing. Therefore, NiGe formed by the proposed Co interlayer that is, Co/Ni/TiN structure, is a promising technology for S/D contact of Ge MOSFETs.

Original languageEnglish
Pages (from-to)277-282
Number of pages6
JournalJournal of Semiconductor Technology and Science
Volume17
Issue number2
DOIs
Publication statusPublished - 2017 Apr

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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