Abstract
Nickel germanide (NiGe) is one of the most promising alloy materials for source/drain (S/D) of Ge MOSFETs. However, NiGe has limited thermal stability up to 450°C which is a challenge for fabrication of Ge MOSFETs. In this paper, a novel method is proposed to improve the thermal stability of NiGe using Co interlayer. As a result, we found that the thermal stability of NiGe was improved from 450°C to 570°C by using the proposed Co interlayer. Furthermore, we found that current-voltage (I-V) characteristic was improved a little by using Co/Ni/TiN structure after post-annealing. Therefore, NiGe formed by the proposed Co interlayer that is, Co/Ni/TiN structure, is a promising technology for S/D contact of Ge MOSFETs.
| Original language | English |
|---|---|
| Pages (from-to) | 277-282 |
| Number of pages | 6 |
| Journal | Journal of Semiconductor Technology and Science |
| Volume | 17 |
| Issue number | 2 |
| DOIs | |
| Publication status | Published - 2017 Apr |
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering
Fingerprint Dive into the research topics of 'A study on thermal stability improvement in Ni germanide/p-Ge using Co interlayer for Ge MOSFETs'. Together they form a unique fingerprint.
Cite this
Shin, G. H., Kim, J., Li, M., Lee, J., Lee, G. W., Oh, J., & Lee, H. D. (2017). A study on thermal stability improvement in Ni germanide/p-Ge using Co interlayer for Ge MOSFETs. Journal of Semiconductor Technology and Science, 17(2), 277-282. https://doi.org/10.5573/JSTS.2017.17.2.277