Nickel germanide (NiGe) is one of the most promising alloy materials for source/drain (S/D) of Ge MOSFETs. However, NiGe has limited thermal stability up to 450°C which is a challenge for fabrication of Ge MOSFETs. In this paper, a novel method is proposed to improve the thermal stability of NiGe using Co interlayer. As a result, we found that the thermal stability of NiGe was improved from 450°C to 570°C by using the proposed Co interlayer. Furthermore, we found that current-voltage (I-V) characteristic was improved a little by using Co/Ni/TiN structure after post-annealing. Therefore, NiGe formed by the proposed Co interlayer that is, Co/Ni/TiN structure, is a promising technology for S/D contact of Ge MOSFETs.
Bibliographical noteFunding Information:
This research was partly supported by the MOTIE (Ministry of Trade, Industry & Energy (10048536) and the KSRC (Korea Semiconductor Research Consortium) support program for the development of future semiconductor devices. This work was also supported by research fund of Chungnam National University.
© 2017, Institute of Electronics Engineers of Korea. All rights reserved.
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering