A study on thermal stability improvement in Ni germanide/p-Ge using Co interlayer for Ge MOSFETs

Geon Ho Shin, Jeyoung Kim, Meng Li, Jeongchan Lee, Ga Won Lee, Jungwoo Oh, Hi Deok Lee

Research output: Contribution to journalArticle

Abstract

Nickel germanide (NiGe) is one of the most promising alloy materials for source/drain (S/D) of Ge MOSFETs. However, NiGe has limited thermal stability up to 450°C which is a challenge for fabrication of Ge MOSFETs. In this paper, a novel method is proposed to improve the thermal stability of NiGe using Co interlayer. As a result, we found that the thermal stability of NiGe was improved from 450°C to 570°C by using the proposed Co interlayer. Furthermore, we found that current-voltage (I-V) characteristic was improved a little by using Co/Ni/TiN structure after post-annealing. Therefore, NiGe formed by the proposed Co interlayer that is, Co/Ni/TiN structure, is a promising technology for S/D contact of Ge MOSFETs.

Original languageEnglish
Pages (from-to)277-282
Number of pages6
JournalJournal of Semiconductor Technology and Science
Volume17
Issue number2
DOIs
Publication statusPublished - 2017 Apr 1

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Nickel
Thermodynamic stability
Annealing
Fabrication
Electric potential

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

Cite this

Shin, Geon Ho ; Kim, Jeyoung ; Li, Meng ; Lee, Jeongchan ; Lee, Ga Won ; Oh, Jungwoo ; Lee, Hi Deok. / A study on thermal stability improvement in Ni germanide/p-Ge using Co interlayer for Ge MOSFETs. In: Journal of Semiconductor Technology and Science. 2017 ; Vol. 17, No. 2. pp. 277-282.
@article{5a43e7fac0e94eb2b82a316901337e8f,
title = "A study on thermal stability improvement in Ni germanide/p-Ge using Co interlayer for Ge MOSFETs",
abstract = "Nickel germanide (NiGe) is one of the most promising alloy materials for source/drain (S/D) of Ge MOSFETs. However, NiGe has limited thermal stability up to 450°C which is a challenge for fabrication of Ge MOSFETs. In this paper, a novel method is proposed to improve the thermal stability of NiGe using Co interlayer. As a result, we found that the thermal stability of NiGe was improved from 450°C to 570°C by using the proposed Co interlayer. Furthermore, we found that current-voltage (I-V) characteristic was improved a little by using Co/Ni/TiN structure after post-annealing. Therefore, NiGe formed by the proposed Co interlayer that is, Co/Ni/TiN structure, is a promising technology for S/D contact of Ge MOSFETs.",
author = "Shin, {Geon Ho} and Jeyoung Kim and Meng Li and Jeongchan Lee and Lee, {Ga Won} and Jungwoo Oh and Lee, {Hi Deok}",
year = "2017",
month = "4",
day = "1",
doi = "10.5573/JSTS.2017.17.2.277",
language = "English",
volume = "17",
pages = "277--282",
journal = "Journal of Semiconductor Technology and Science",
issn = "1598-1657",
publisher = "Institute of Electronics Engineers of Korea",
number = "2",

}

A study on thermal stability improvement in Ni germanide/p-Ge using Co interlayer for Ge MOSFETs. / Shin, Geon Ho; Kim, Jeyoung; Li, Meng; Lee, Jeongchan; Lee, Ga Won; Oh, Jungwoo; Lee, Hi Deok.

In: Journal of Semiconductor Technology and Science, Vol. 17, No. 2, 01.04.2017, p. 277-282.

Research output: Contribution to journalArticle

TY - JOUR

T1 - A study on thermal stability improvement in Ni germanide/p-Ge using Co interlayer for Ge MOSFETs

AU - Shin, Geon Ho

AU - Kim, Jeyoung

AU - Li, Meng

AU - Lee, Jeongchan

AU - Lee, Ga Won

AU - Oh, Jungwoo

AU - Lee, Hi Deok

PY - 2017/4/1

Y1 - 2017/4/1

N2 - Nickel germanide (NiGe) is one of the most promising alloy materials for source/drain (S/D) of Ge MOSFETs. However, NiGe has limited thermal stability up to 450°C which is a challenge for fabrication of Ge MOSFETs. In this paper, a novel method is proposed to improve the thermal stability of NiGe using Co interlayer. As a result, we found that the thermal stability of NiGe was improved from 450°C to 570°C by using the proposed Co interlayer. Furthermore, we found that current-voltage (I-V) characteristic was improved a little by using Co/Ni/TiN structure after post-annealing. Therefore, NiGe formed by the proposed Co interlayer that is, Co/Ni/TiN structure, is a promising technology for S/D contact of Ge MOSFETs.

AB - Nickel germanide (NiGe) is one of the most promising alloy materials for source/drain (S/D) of Ge MOSFETs. However, NiGe has limited thermal stability up to 450°C which is a challenge for fabrication of Ge MOSFETs. In this paper, a novel method is proposed to improve the thermal stability of NiGe using Co interlayer. As a result, we found that the thermal stability of NiGe was improved from 450°C to 570°C by using the proposed Co interlayer. Furthermore, we found that current-voltage (I-V) characteristic was improved a little by using Co/Ni/TiN structure after post-annealing. Therefore, NiGe formed by the proposed Co interlayer that is, Co/Ni/TiN structure, is a promising technology for S/D contact of Ge MOSFETs.

UR - http://www.scopus.com/inward/record.url?scp=85018778745&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85018778745&partnerID=8YFLogxK

U2 - 10.5573/JSTS.2017.17.2.277

DO - 10.5573/JSTS.2017.17.2.277

M3 - Article

AN - SCOPUS:85018778745

VL - 17

SP - 277

EP - 282

JO - Journal of Semiconductor Technology and Science

JF - Journal of Semiconductor Technology and Science

SN - 1598-1657

IS - 2

ER -