Abstract
Nickel germanide (NiGe) is one of the most promising alloy materials for source/drain (S/D) of Ge MOSFETs. However, NiGe has limited thermal stability up to 450°C which is a challenge for fabrication of Ge MOSFETs. In this paper, a novel method is proposed to improve the thermal stability of NiGe using Co interlayer. As a result, we found that the thermal stability of NiGe was improved from 450°C to 570°C by using the proposed Co interlayer. Furthermore, we found that current-voltage (I-V) characteristic was improved a little by using Co/Ni/TiN structure after post-annealing. Therefore, NiGe formed by the proposed Co interlayer that is, Co/Ni/TiN structure, is a promising technology for S/D contact of Ge MOSFETs.
| Original language | English |
|---|---|
| Pages (from-to) | 277-282 |
| Number of pages | 6 |
| Journal | Journal of Semiconductor Technology and Science |
| Volume | 17 |
| Issue number | 2 |
| DOIs | |
| Publication status | Published - 2017 Apr 1 |
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All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering
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A study on thermal stability improvement in Ni germanide/p-Ge using Co interlayer for Ge MOSFETs. / Shin, Geon Ho; Kim, Jeyoung; Li, Meng; Lee, Jeongchan; Lee, Ga Won; Oh, Jungwoo; Lee, Hi Deok.
In: Journal of Semiconductor Technology and Science, Vol. 17, No. 2, 01.04.2017, p. 277-282.Research output: Contribution to journal › Article
TY - JOUR
T1 - A study on thermal stability improvement in Ni germanide/p-Ge using Co interlayer for Ge MOSFETs
AU - Shin, Geon Ho
AU - Kim, Jeyoung
AU - Li, Meng
AU - Lee, Jeongchan
AU - Lee, Ga Won
AU - Oh, Jungwoo
AU - Lee, Hi Deok
PY - 2017/4/1
Y1 - 2017/4/1
N2 - Nickel germanide (NiGe) is one of the most promising alloy materials for source/drain (S/D) of Ge MOSFETs. However, NiGe has limited thermal stability up to 450°C which is a challenge for fabrication of Ge MOSFETs. In this paper, a novel method is proposed to improve the thermal stability of NiGe using Co interlayer. As a result, we found that the thermal stability of NiGe was improved from 450°C to 570°C by using the proposed Co interlayer. Furthermore, we found that current-voltage (I-V) characteristic was improved a little by using Co/Ni/TiN structure after post-annealing. Therefore, NiGe formed by the proposed Co interlayer that is, Co/Ni/TiN structure, is a promising technology for S/D contact of Ge MOSFETs.
AB - Nickel germanide (NiGe) is one of the most promising alloy materials for source/drain (S/D) of Ge MOSFETs. However, NiGe has limited thermal stability up to 450°C which is a challenge for fabrication of Ge MOSFETs. In this paper, a novel method is proposed to improve the thermal stability of NiGe using Co interlayer. As a result, we found that the thermal stability of NiGe was improved from 450°C to 570°C by using the proposed Co interlayer. Furthermore, we found that current-voltage (I-V) characteristic was improved a little by using Co/Ni/TiN structure after post-annealing. Therefore, NiGe formed by the proposed Co interlayer that is, Co/Ni/TiN structure, is a promising technology for S/D contact of Ge MOSFETs.
UR - http://www.scopus.com/inward/record.url?scp=85018778745&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=85018778745&partnerID=8YFLogxK
U2 - 10.5573/JSTS.2017.17.2.277
DO - 10.5573/JSTS.2017.17.2.277
M3 - Article
AN - SCOPUS:85018778745
VL - 17
SP - 277
EP - 282
JO - Journal of Semiconductor Technology and Science
JF - Journal of Semiconductor Technology and Science
SN - 1598-1657
IS - 2
ER -