A study on thermal stability improvement in Ni germanide/p-Ge using Co interlayer for Ge MOSFETs

Geon Ho Shin, Jeyoung Kim, Meng Li, Jeongchan Lee, Ga Won Lee, Jungwoo Oh, Hi Deok Lee

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1 Citation (Scopus)


Nickel germanide (NiGe) is one of the most promising alloy materials for source/drain (S/D) of Ge MOSFETs. However, NiGe has limited thermal stability up to 450°C which is a challenge for fabrication of Ge MOSFETs. In this paper, a novel method is proposed to improve the thermal stability of NiGe using Co interlayer. As a result, we found that the thermal stability of NiGe was improved from 450°C to 570°C by using the proposed Co interlayer. Furthermore, we found that current-voltage (I-V) characteristic was improved a little by using Co/Ni/TiN structure after post-annealing. Therefore, NiGe formed by the proposed Co interlayer that is, Co/Ni/TiN structure, is a promising technology for S/D contact of Ge MOSFETs.

Original languageEnglish
Pages (from-to)277-282
Number of pages6
JournalJournal of Semiconductor Technology and Science
Issue number2
Publication statusPublished - 2017 Apr

Bibliographical note

Funding Information:
This research was partly supported by the MOTIE (Ministry of Trade, Industry & Energy (10048536) and the KSRC (Korea Semiconductor Research Consortium) support program for the development of future semiconductor devices. This work was also supported by research fund of Chungnam National University.

Publisher Copyright:
© 2017, Institute of Electronics Engineers of Korea. All rights reserved.

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering


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