Abstract
We present a large-signal SPICE model for the depletion-type silicon ring (RM) modulator that includes temperature dependence. The model is based on the temperature-dependent equivalent circuit for the RM and allows easy simulation of RM modulation characteristics in SPICE. The accuracy of the model is verified with the measurement results of 25-Gb/s NRZ modulation at several different temperatures. In addition, simulation of the temperature-dependent transient responses of the RM together with the RM temperature control circuit is demonstrated in the standard IC design environment.
| Original language | English |
|---|---|
| Article number | 9499058 |
| Pages (from-to) | 947-950 |
| Number of pages | 4 |
| Journal | IEEE Photonics Technology Letters |
| Volume | 33 |
| Issue number | 17 |
| DOIs | |
| Publication status | Published - 2021 Sept 1 |
Bibliographical note
Funding Information:Manuscript received April 9, 2021; revised July 13, 2021; accepted July 16, 2021. Date of publication July 27, 2021; date of current version August 2, 2021. This work was supported in part by the Materials and Parts Technology Research Development Program through the Korean Ministry of Trade, Industry, and Energy under Project 10065666 and in part by the National Research Foundation of Korea (NRF) Grant by the Korean Government through the Ministry of Science and ICT (MSIT) under Project 2020R1A2C201508911. (Corresponding author: Woo-Young Choi.) Minkyu Kim was with the High-Speed Circuits and Systems Laboratory, Department of Electrical and Electronics Engineering, Yonsei University, Seoul 03722, South Korea. He is now with IMEC, 3001 Leuven, Belgium.
Publisher Copyright:
© 1989-2012 IEEE.
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Atomic and Molecular Physics, and Optics
- Electrical and Electronic Engineering