A Temperature Controller IC for Maximizing Si Micro-Ring Modulator Optical Modulation Amplitude

Min Hyeong Kim, Lars Zimmermann, Woo Young Choi

Research output: Contribution to journalArticlepeer-review

10 Citations (Scopus)

Abstract

We present a custom-designed integrated circuit (IC) implemented in 0.25-μm BiCMOS technology that can automatically control the Si micro-ring modulator (MRM) temperature for optimal modulation characteristics. The IC monitors the optical modulation amplitude (OMA) of an Si MRM and provides the optimal heater setting for the maximum OMA. The IC consists of trans-impedance amplifier, power detector, track-and-hold circuit, comparator, digital-to-analog converter, and digital controller, all of which are integrated in a single chip. We demonstrate that, with this IC, an Si MRM can provide the maximum OMA for 25-Gb/s operation despite changes in temperature and input optical power.

Original languageEnglish
Article number8598657
Pages (from-to)1200-1206
Number of pages7
JournalJournal of Lightwave Technology
Volume37
Issue number4
DOIs
Publication statusPublished - 2019 Feb 15

Bibliographical note

Funding Information:
Manuscript received July 25, 2018; revised October 3, 2018 and November 27, 2018; accepted December 21, 2018. Date of publication January 1, 2019; date of current version February 22, 2019. This work was supported by the Materials and Parts Technology R&D Program funded by the Korean Ministry of Trade, Industry and Energy under Project 10065666. (Corresponding author: Woo-Young Choi.) M.-H. Kim and W.-Y. Choi are with the Department of Electrical and Electronic Engineering, Yonsei University, Seoul 120-749, South Korea (e-mail:, teramhkim@gmail.com; wchoi@yonsei.ac.kr).

Publisher Copyright:
© 1983-2012 IEEE.

All Science Journal Classification (ASJC) codes

  • Atomic and Molecular Physics, and Optics

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