A theoretical model for Schottky diodes for excluding the sneak current in cross bar array resistive memory

Gun Hwan Kim; Kyung Min Kim; Jun Yeong Seok; Hyun Ju Lee; Deok Yong Cho; Jeong Hwan Han; Cheol Seong Hwang

doi:10.1088/0957-4484/21/38/385202

A theoretical model for Schottky diodes for excluding the sneak current in cross bar array resistive memory

Gun Hwan Kim, Kyung Min Kim, Jun Yeong Seok, Hyun Ju Lee, Deok Yong Cho, Jeong Hwan Han, Cheol Seong Hwang

School of System & Semiconductor Engineering

Research output: Contribution to journal › Article › peer-review

Abstract

Kirchhoff's law was used to examine the electrical specifications of selection diodes, which are essential for suppressing the read interference problems in nano-scale resistive switching cross bar arrays with a high block density. The diode in the cross bar array with a 100 Mb block density should have a reverse/forward resistance ratio of >10⁸ and a forward current density of >10⁵ A cm^-2 for stable reading and writing operation. Whilst normal circuit simulators are heavily overloaded when the number of cells (m) connected to one bit and word line is larger (m ≫ 100), which is the desired range for high density cross bar arrays, the present model can provide a simple simulation. The validity of this new method was confirmed by a comparison with the previously reported method based on a voltage estimation.

Original language	English
Article number	385202
Journal	Nanotechnology
Volume	21
Issue number	38
DOIs	https://doi.org/10.1088/0957-4484/21/38/385202
Publication status	Published - 2010 Sept 24

All Science Journal Classification (ASJC) codes

Bioengineering
Chemistry(all)
Materials Science(all)
Mechanics of Materials
Mechanical Engineering
Electrical and Electronic Engineering

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10.1088/0957-4484/21/38/385202

Cite this

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abstract = "Kirchhoff's law was used to examine the electrical specifications of selection diodes, which are essential for suppressing the read interference problems in nano-scale resistive switching cross bar arrays with a high block density. The diode in the cross bar array with a 100 Mb block density should have a reverse/forward resistance ratio of >108 and a forward current density of >105 A cm-2 for stable reading and writing operation. Whilst normal circuit simulators are heavily overloaded when the number of cells (m) connected to one bit and word line is larger (m ≫ 100), which is the desired range for high density cross bar arrays, the present model can provide a simple simulation. The validity of this new method was confirmed by a comparison with the previously reported method based on a voltage estimation.",

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AU - Kim, Gun Hwan

AU - Kim, Kyung Min

AU - Seok, Jun Yeong

AU - Lee, Hyun Ju

AU - Cho, Deok Yong

AU - Han, Jeong Hwan

AU - Hwang, Cheol Seong

PY - 2010/9/24

Y1 - 2010/9/24

N2 - Kirchhoff's law was used to examine the electrical specifications of selection diodes, which are essential for suppressing the read interference problems in nano-scale resistive switching cross bar arrays with a high block density. The diode in the cross bar array with a 100 Mb block density should have a reverse/forward resistance ratio of >108 and a forward current density of >105 A cm-2 for stable reading and writing operation. Whilst normal circuit simulators are heavily overloaded when the number of cells (m) connected to one bit and word line is larger (m ≫ 100), which is the desired range for high density cross bar arrays, the present model can provide a simple simulation. The validity of this new method was confirmed by a comparison with the previously reported method based on a voltage estimation.

AB - Kirchhoff's law was used to examine the electrical specifications of selection diodes, which are essential for suppressing the read interference problems in nano-scale resistive switching cross bar arrays with a high block density. The diode in the cross bar array with a 100 Mb block density should have a reverse/forward resistance ratio of >108 and a forward current density of >105 A cm-2 for stable reading and writing operation. Whilst normal circuit simulators are heavily overloaded when the number of cells (m) connected to one bit and word line is larger (m ≫ 100), which is the desired range for high density cross bar arrays, the present model can provide a simple simulation. The validity of this new method was confirmed by a comparison with the previously reported method based on a voltage estimation.

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A theoretical model for Schottky diodes for excluding the sneak current in cross bar array resistive memory

Abstract

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