A tunable amorphous p-type ternary oxide system

The highly mismatched alloy of copper tin oxide

Patrick J.M. Isherwood, Keith T. Butler, Aron Walsh, John M. Walls

Research output: Contribution to journalArticle

4 Citations (Scopus)

Abstract

The approach of combining two mismatched materials to form an amorphous alloy was used to synthesise ternary oxides of CuO and SnO2. These materials were analysed across a range of compositions, and the electronic structure was modelled using density functional theory. In contrast to the gradual reduction in optical band gap, the films show a sharp reduction in both transparency and electrical resistivity with copper contents greater than 50%. Simulations indicate that this change is caused by a transition from a dominant Sn 5s to Cu 3d contribution to the upper valence band. A corresponding decrease in energetic disorder results in increased charge percolation pathways: a "compositional mobility edge." Contributions from Cu(II) sub band-gap states are responsible for the reduction in optical transparency.

Original languageEnglish
Article number105702
JournalJournal of Applied Physics
Volume118
Issue number10
DOIs
Publication statusPublished - 2015 Sep 14

Fingerprint

copper oxides
tin oxides
oxides
electrical resistivity
disorders
density functional theory
electronic structure
valence
copper
simulation

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

Cite this

Isherwood, Patrick J.M. ; Butler, Keith T. ; Walsh, Aron ; Walls, John M. / A tunable amorphous p-type ternary oxide system : The highly mismatched alloy of copper tin oxide. In: Journal of Applied Physics. 2015 ; Vol. 118, No. 10.
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A tunable amorphous p-type ternary oxide system : The highly mismatched alloy of copper tin oxide. / Isherwood, Patrick J.M.; Butler, Keith T.; Walsh, Aron; Walls, John M.

In: Journal of Applied Physics, Vol. 118, No. 10, 105702, 14.09.2015.

Research output: Contribution to journalArticle

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