A ZnO nanowire-based photo-inverter with pulse-induced fast recovery

Syed Raza Ali Raza, Young Tack Lee, Seyed Hossein Hosseini Shokouh, Ryong Ha, Heon Jin Choi, Seongil Im

Research output: Contribution to journalArticle

13 Citations (Scopus)

Abstract

We demonstrate a fast response photo-inverter comprised of one transparent gated ZnO nanowire field-effect transistor (FET) and one opaque FET respectively as the driver and load. Under ultraviolet (UV) light the transfer curve of the transparent gate FET shifts to the negative side and so does the voltage transfer curve (VTC) of the inverter. After termination of UV exposure the recovery of photo-induced current takes a long time in general. This persistent photoconductivity (PPC) is due to hole trapping on the surface of ZnO NWs. Here, we used a positive voltage short pulse after UV exposure, for the first time resolving the PPC issue in nanowire-based photo-detectors by accumulating electrons at the ZnO/dielectric interface. We found that a pulse duration as small as 200 ns was sufficient to reach a full recovery to the dark state from the UV induced state, realizing a fast UV detector with a voltage output.

Original languageEnglish
Pages (from-to)10829-10834
Number of pages6
JournalNanoscale
Volume5
Issue number22
DOIs
Publication statusPublished - 2013 Nov 21

All Science Journal Classification (ASJC) codes

  • Materials Science(all)

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    Raza, S. R. A., Lee, Y. T., Hosseini Shokouh, S. H., Ha, R., Choi, H. J., & Im, S. (2013). A ZnO nanowire-based photo-inverter with pulse-induced fast recovery. Nanoscale, 5(22), 10829-10834. https://doi.org/10.1039/c3nr03801g