Abnormal Output Characteristics of p-Type Low Temperature Polycrystalline Silicon Thin Film Transistor Fabricated on Polyimide Substrate

Seok Woo Lee; Chang Bum Park; Pyo Jin Jeon; Sung Wook Min; June Yeong Lim; Han Sol Lee; Jae Sung Yoo; Soon Sung Yoo; Seongil Im

doi:10.1109/JEDS.2015.2493561

Abnormal Output Characteristics of p-Type Low Temperature Polycrystalline Silicon Thin Film Transistor Fabricated on Polyimide Substrate

Seok Woo Lee, Chang Bum Park, Pyo Jin Jeon, Sung Wook Min, June Yeong Lim, Han Sol Lee, Jae Sung Yoo, Soon Sung Yoo, Seongil Im

Department of Physics

Research output: Contribution to journal › Article

6 Citations (Scopus)

Abstract

We report on an abnormal output characteristics in p-type low temperature polycrystalline silicon thin-film transistors fabricated on polyimide (PI); negative differential conductance behavior is often observed in saturation region of drain current from large width devices. To understand such abnormal output characteristics, device dimension dependence was studied in a systematic way. As a result, we found that enhanced self-heating is mainly responsible originating from the poor thermal conductivity of PI substrate. A related degradation model is also proposed.

Original language	English
Article number	7302517
Pages (from-to)	7-10
Number of pages	4
Journal	IEEE Journal of the Electron Devices Society
Volume	4
Issue number	1
DOIs	https://doi.org/10.1109/JEDS.2015.2493561
Publication status	Published - 2016 Jan

All Science Journal Classification (ASJC) codes

Biotechnology
Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

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Lee, S. W., Park, C. B., Jeon, P. J., Min, S. W., Lim, J. Y., Lee, H. S., Yoo, J. S., Yoo, S. S., & Im, S. (2016). Abnormal Output Characteristics of p-Type Low Temperature Polycrystalline Silicon Thin Film Transistor Fabricated on Polyimide Substrate. IEEE Journal of the Electron Devices Society, 4(1), 7-10. [7302517]. https://doi.org/10.1109/JEDS.2015.2493561

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abstract = "We report on an abnormal output characteristics in p-type low temperature polycrystalline silicon thin-film transistors fabricated on polyimide (PI); negative differential conductance behavior is often observed in saturation region of drain current from large width devices. To understand such abnormal output characteristics, device dimension dependence was studied in a systematic way. As a result, we found that enhanced self-heating is mainly responsible originating from the poor thermal conductivity of PI substrate. A related degradation model is also proposed.",

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Abnormal Output Characteristics of p-Type Low Temperature Polycrystalline Silicon Thin Film Transistor Fabricated on Polyimide Substrate. / Lee, Seok Woo; Park, Chang Bum; Jeon, Pyo Jin; Min, Sung Wook; Lim, June Yeong; Lee, Han Sol; Yoo, Jae Sung; Yoo, Soon Sung; Im, Seongil.

In: IEEE Journal of the Electron Devices Society, Vol. 4, No. 1, 7302517, 01.2016, p. 7-10.

Research output: Contribution to journal › Article

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