Abnormal Output Characteristics of p-Type Low Temperature Polycrystalline Silicon Thin Film Transistor Fabricated on Polyimide Substrate

Seok Woo Lee; Chang Bum Park; Pyo Jin Jeon; Sung Wook Min; June Yeong Lim; Han Sol Lee; Jae Sung Yoo; Soon Sung Yoo; Seongil Im

doi:10.1109/JEDS.2015.2493561

Abnormal Output Characteristics of p-Type Low Temperature Polycrystalline Silicon Thin Film Transistor Fabricated on Polyimide Substrate

Seok Woo Lee, Chang Bum Park, Pyo Jin Jeon, Sung Wook Min, June Yeong Lim, Han Sol Lee, Jae Sung Yoo, Soon Sung Yoo, Seongil Im

Department of Physics

Research output: Contribution to journal › Article

6 Citations (Scopus)

Abstract

We report on an abnormal output characteristics in p-type low temperature polycrystalline silicon thin-film transistors fabricated on polyimide (PI); negative differential conductance behavior is often observed in saturation region of drain current from large width devices. To understand such abnormal output characteristics, device dimension dependence was studied in a systematic way. As a result, we found that enhanced self-heating is mainly responsible originating from the poor thermal conductivity of PI substrate. A related degradation model is also proposed.

Original language	English
Article number	7302517
Pages (from-to)	7-10
Number of pages	4
Journal	IEEE Journal of the Electron Devices Society
Volume	4
Issue number	1
DOIs	https://doi.org/10.1109/JEDS.2015.2493561
Publication status	Published - 2016 Jan

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All Science Journal Classification (ASJC) codes

Biotechnology
Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

Cite this

Lee, S. W., Park, C. B., Jeon, P. J., Min, S. W., Lim, J. Y., Lee, H. S., Yoo, J. S., Yoo, S. S., & Im, S. (2016). Abnormal Output Characteristics of p-Type Low Temperature Polycrystalline Silicon Thin Film Transistor Fabricated on Polyimide Substrate. IEEE Journal of the Electron Devices Society, 4(1), 7-10. [7302517]. https://doi.org/10.1109/JEDS.2015.2493561

@article{a068320a802a4a70aced2e4e46b2fed5,

title = "Abnormal Output Characteristics of p-Type Low Temperature Polycrystalline Silicon Thin Film Transistor Fabricated on Polyimide Substrate",

abstract = "We report on an abnormal output characteristics in p-type low temperature polycrystalline silicon thin-film transistors fabricated on polyimide (PI); negative differential conductance behavior is often observed in saturation region of drain current from large width devices. To understand such abnormal output characteristics, device dimension dependence was studied in a systematic way. As a result, we found that enhanced self-heating is mainly responsible originating from the poor thermal conductivity of PI substrate. A related degradation model is also proposed.",

author = "Lee, {Seok Woo} and Park, {Chang Bum} and Jeon, {Pyo Jin} and Min, {Sung Wook} and Lim, {June Yeong} and Lee, {Han Sol} and Yoo, {Jae Sung} and Yoo, {Soon Sung} and Seongil Im",

year = "2016",

month = jan,

doi = "10.1109/JEDS.2015.2493561",

language = "English",

volume = "4",

pages = "7--10",

journal = "IEEE Journal of the Electron Devices Society",

issn = "2168-6734",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "1",

}

Abnormal Output Characteristics of p-Type Low Temperature Polycrystalline Silicon Thin Film Transistor Fabricated on Polyimide Substrate. / Lee, Seok Woo; Park, Chang Bum; Jeon, Pyo Jin; Min, Sung Wook; Lim, June Yeong; Lee, Han Sol; Yoo, Jae Sung; Yoo, Soon Sung; Im, Seongil.

In: IEEE Journal of the Electron Devices Society, Vol. 4, No. 1, 7302517, 01.2016, p. 7-10.

Research output: Contribution to journal › Article

TY - JOUR

T1 - Abnormal Output Characteristics of p-Type Low Temperature Polycrystalline Silicon Thin Film Transistor Fabricated on Polyimide Substrate

AU - Lee, Seok Woo

AU - Park, Chang Bum

AU - Jeon, Pyo Jin

AU - Min, Sung Wook

AU - Lim, June Yeong

AU - Lee, Han Sol

AU - Yoo, Jae Sung

AU - Yoo, Soon Sung

AU - Im, Seongil

PY - 2016/1

Y1 - 2016/1

N2 - We report on an abnormal output characteristics in p-type low temperature polycrystalline silicon thin-film transistors fabricated on polyimide (PI); negative differential conductance behavior is often observed in saturation region of drain current from large width devices. To understand such abnormal output characteristics, device dimension dependence was studied in a systematic way. As a result, we found that enhanced self-heating is mainly responsible originating from the poor thermal conductivity of PI substrate. A related degradation model is also proposed.

AB - We report on an abnormal output characteristics in p-type low temperature polycrystalline silicon thin-film transistors fabricated on polyimide (PI); negative differential conductance behavior is often observed in saturation region of drain current from large width devices. To understand such abnormal output characteristics, device dimension dependence was studied in a systematic way. As a result, we found that enhanced self-heating is mainly responsible originating from the poor thermal conductivity of PI substrate. A related degradation model is also proposed.

UR - http://www.scopus.com/inward/record.url?scp=84969781377&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84969781377&partnerID=8YFLogxK

U2 - 10.1109/JEDS.2015.2493561

DO - 10.1109/JEDS.2015.2493561

M3 - Article

AN - SCOPUS:84969781377

VL - 4

SP - 7

EP - 10

JO - IEEE Journal of the Electron Devices Society

JF - IEEE Journal of the Electron Devices Society

SN - 2168-6734

IS - 1

M1 - 7302517

ER -

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10.1109/JEDS.2015.2493561