Abnormal Output Characteristics of p-Type Low Temperature Polycrystalline Silicon Thin Film Transistor Fabricated on Polyimide Substrate

Seok Woo Lee; Chang Bum Park; Pyo Jin Jeon; Sung Wook Min; June Yeong Lim; Han Sol Lee; Jae Sung Yoo; Soon Sung Yoo; Seongil Im

doi:10.1109/JEDS.2015.2493561

Abnormal Output Characteristics of p-Type Low Temperature Polycrystalline Silicon Thin Film Transistor Fabricated on Polyimide Substrate

Seok Woo Lee, Chang Bum Park, Pyo Jin Jeon, Sung Wook Min, June Yeong Lim, Han Sol Lee, Jae Sung Yoo, Soon Sung Yoo, Seongil Im

Department of Physics

Research output: Contribution to journal › Article › peer-review

11 Citations (Scopus)

Abstract

We report on an abnormal output characteristics in p-type low temperature polycrystalline silicon thin-film transistors fabricated on polyimide (PI); negative differential conductance behavior is often observed in saturation region of drain current from large width devices. To understand such abnormal output characteristics, device dimension dependence was studied in a systematic way. As a result, we found that enhanced self-heating is mainly responsible originating from the poor thermal conductivity of PI substrate. A related degradation model is also proposed.

Original language	English
Article number	7302517
Pages (from-to)	7-10
Number of pages	4
Journal	IEEE Journal of the Electron Devices Society
Volume	4
Issue number	1
DOIs	https://doi.org/10.1109/JEDS.2015.2493561
Publication status	Published - 2016 Jan

Bibliographical note

Funding Information:
This work was supported in part by the Korea Evaluation Institute of Industrial Technology under Grant 10042433-2012-11, in part by the National Research Foundation of Korea (NRL Program) under Grant 2014R1A2A1A01004815, and in part by the BK21 Plus Program.

Publisher Copyright:
© 2013 IEEE.

All Science Journal Classification (ASJC) codes

Biotechnology
Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

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10.1109/JEDS.2015.2493561

Cite this

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title = "Abnormal Output Characteristics of p-Type Low Temperature Polycrystalline Silicon Thin Film Transistor Fabricated on Polyimide Substrate",

abstract = "We report on an abnormal output characteristics in p-type low temperature polycrystalline silicon thin-film transistors fabricated on polyimide (PI); negative differential conductance behavior is often observed in saturation region of drain current from large width devices. To understand such abnormal output characteristics, device dimension dependence was studied in a systematic way. As a result, we found that enhanced self-heating is mainly responsible originating from the poor thermal conductivity of PI substrate. A related degradation model is also proposed.",

author = "Lee, {Seok Woo} and Park, {Chang Bum} and Jeon, {Pyo Jin} and Min, {Sung Wook} and Lim, {June Yeong} and Lee, {Han Sol} and Yoo, {Jae Sung} and Yoo, {Soon Sung} and Seongil Im",

note = "Funding Information: This work was supported in part by the Korea Evaluation Institute of Industrial Technology under Grant 10042433-2012-11, in part by the National Research Foundation of Korea (NRL Program) under Grant 2014R1A2A1A01004815, and in part by the BK21 Plus Program. Publisher Copyright: {\textcopyright} 2013 IEEE.",

year = "2016",

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doi = "10.1109/JEDS.2015.2493561",

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AU - Lee, Seok Woo

AU - Park, Chang Bum

AU - Jeon, Pyo Jin

AU - Min, Sung Wook

AU - Lim, June Yeong

AU - Lee, Han Sol

AU - Yoo, Jae Sung

AU - Yoo, Soon Sung

AU - Im, Seongil

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AB - We report on an abnormal output characteristics in p-type low temperature polycrystalline silicon thin-film transistors fabricated on polyimide (PI); negative differential conductance behavior is often observed in saturation region of drain current from large width devices. To understand such abnormal output characteristics, device dimension dependence was studied in a systematic way. As a result, we found that enhanced self-heating is mainly responsible originating from the poor thermal conductivity of PI substrate. A related degradation model is also proposed.

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Abnormal Output Characteristics of p-Type Low Temperature Polycrystalline Silicon Thin Film Transistor Fabricated on Polyimide Substrate

Abstract

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