Abstract
We report on an abnormal output characteristics in p-type low temperature polycrystalline silicon thin-film transistors fabricated on polyimide (PI); negative differential conductance behavior is often observed in saturation region of drain current from large width devices. To understand such abnormal output characteristics, device dimension dependence was studied in a systematic way. As a result, we found that enhanced self-heating is mainly responsible originating from the poor thermal conductivity of PI substrate. A related degradation model is also proposed.
| Original language | English |
|---|---|
| Article number | 7302517 |
| Pages (from-to) | 7-10 |
| Number of pages | 4 |
| Journal | IEEE Journal of the Electron Devices Society |
| Volume | 4 |
| Issue number | 1 |
| DOIs | |
| Publication status | Published - 2016 Jan |
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All Science Journal Classification (ASJC) codes
- Biotechnology
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering
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Abnormal Output Characteristics of p-Type Low Temperature Polycrystalline Silicon Thin Film Transistor Fabricated on Polyimide Substrate. / Lee, Seok Woo; Park, Chang Bum; Jeon, Pyo Jin; Min, Sung Wook; Lim, June Yeong; Lee, Han Sol; Yoo, Jae Sung; Yoo, Soon Sung; Im, Seongil.
In: IEEE Journal of the Electron Devices Society, Vol. 4, No. 1, 7302517, 01.2016, p. 7-10.Research output: Contribution to journal › Article
TY - JOUR
T1 - Abnormal Output Characteristics of p-Type Low Temperature Polycrystalline Silicon Thin Film Transistor Fabricated on Polyimide Substrate
AU - Lee, Seok Woo
AU - Park, Chang Bum
AU - Jeon, Pyo Jin
AU - Min, Sung Wook
AU - Lim, June Yeong
AU - Lee, Han Sol
AU - Yoo, Jae Sung
AU - Yoo, Soon Sung
AU - Im, Seongil
PY - 2016/1
Y1 - 2016/1
N2 - We report on an abnormal output characteristics in p-type low temperature polycrystalline silicon thin-film transistors fabricated on polyimide (PI); negative differential conductance behavior is often observed in saturation region of drain current from large width devices. To understand such abnormal output characteristics, device dimension dependence was studied in a systematic way. As a result, we found that enhanced self-heating is mainly responsible originating from the poor thermal conductivity of PI substrate. A related degradation model is also proposed.
AB - We report on an abnormal output characteristics in p-type low temperature polycrystalline silicon thin-film transistors fabricated on polyimide (PI); negative differential conductance behavior is often observed in saturation region of drain current from large width devices. To understand such abnormal output characteristics, device dimension dependence was studied in a systematic way. As a result, we found that enhanced self-heating is mainly responsible originating from the poor thermal conductivity of PI substrate. A related degradation model is also proposed.
UR - http://www.scopus.com/inward/record.url?scp=84969781377&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84969781377&partnerID=8YFLogxK
U2 - 10.1109/JEDS.2015.2493561
DO - 10.1109/JEDS.2015.2493561
M3 - Article
AN - SCOPUS:84969781377
VL - 4
SP - 7
EP - 10
JO - IEEE Journal of the Electron Devices Society
JF - IEEE Journal of the Electron Devices Society
SN - 2168-6734
IS - 1
M1 - 7302517
ER -