We report on an abnormal output characteristics in p-type low temperature polycrystalline silicon thin-film transistors fabricated on polyimide (PI); negative differential conductance behavior is often observed in saturation region of drain current from large width devices. To understand such abnormal output characteristics, device dimension dependence was studied in a systematic way. As a result, we found that enhanced self-heating is mainly responsible originating from the poor thermal conductivity of PI substrate. A related degradation model is also proposed.
Bibliographical noteFunding Information:
This work was supported in part by the Korea Evaluation Institute of Industrial Technology under Grant 10042433-2012-11, in part by the National Research Foundation of Korea (NRL Program) under Grant 2014R1A2A1A01004815, and in part by the BK21 Plus Program.
© 2013 IEEE.
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering