TY - GEN
T1 - Absorption and photoluminescence investigations of excitonic transitions in compressively strained InGaAs/InGaAlAs multiple quantum wells
AU - Choi, Woo Young
AU - Hirayama, Yuzo
AU - Fonstad, Clifton G.
N1 - Copyright:
Copyright 2004 Elsevier B.V., All rights reserved.
PY - 1993
Y1 - 1993
N2 - We present the results of our investigations in which excitonic transitions in compressively strained InGaAs multiple QWs on InP are studied by absorption and photoluminescence(PL) measurements. Specifically, quantitative exciton parameters such as transitions energies, exciton binding energies and radii are estimated from absorption measurements. Comparison is made between strained and lattice-matched QWs. From PL measurements, luminescence characteristics are qualitatively analyzed as a function of well thickness and temperature.
AB - We present the results of our investigations in which excitonic transitions in compressively strained InGaAs multiple QWs on InP are studied by absorption and photoluminescence(PL) measurements. Specifically, quantitative exciton parameters such as transitions energies, exciton binding energies and radii are estimated from absorption measurements. Comparison is made between strained and lattice-matched QWs. From PL measurements, luminescence characteristics are qualitatively analyzed as a function of well thickness and temperature.
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M3 - Conference contribution
AN - SCOPUS:0027290151
SN - 0780309944
T3 - 1993 IEEE 5th International Conference on Indium Phosphide and Related Materials
SP - 477
EP - 480
BT - 1993 IEEE 5th International Conference on Indium Phosphide and Related Materials
PB - Publ by IEEE
T2 - 1993 IEEE International Symposium on Circuits and Systems; Part 1 (of 4)
Y2 - 19 April 1993 through 22 April 1993
ER -