Abstract
We present the results of our investigations in which excitonic transitions in compressively strained InGaAs multiple QWs on InP are studied by absorption and photoluminescence(PL) measurements. Specifically, quantitative exciton parameters such as transitions energies, exciton binding energies and radii are estimated from absorption measurements. Comparison is made between strained and lattice-matched QWs. From PL measurements, luminescence characteristics are qualitatively analyzed as a function of well thickness and temperature.
| Original language | English |
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| Title of host publication | 1993 IEEE 5th International Conference on Indium Phosphide and Related Materials |
| Publisher | Publ by IEEE |
| Pages | 477-480 |
| Number of pages | 4 |
| ISBN (Print) | 0780309944 |
| Publication status | Published - 1993 Jan 1 |
| Event | 1993 IEEE International Symposium on Circuits and Systems; Part 1 (of 4) - Paris, Fr Duration: 1993 Apr 19 → 1993 Apr 22 |
Publication series
| Name | 1993 IEEE 5th International Conference on Indium Phosphide and Related Materials |
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Other
| Other | 1993 IEEE International Symposium on Circuits and Systems; Part 1 (of 4) |
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| City | Paris, Fr |
| Period | 93/4/19 → 93/4/22 |
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All Science Journal Classification (ASJC) codes
- Engineering(all)
Cite this
Choi, W. Y., Hirayama, Y., & Fonstad, C. G. (1993). Absorption and photoluminescence investigations of excitonic transitions in compressively strained InGaAs/InGaAlAs multiple quantum wells. In 1993 IEEE 5th International Conference on Indium Phosphide and Related Materials (pp. 477-480). (1993 IEEE 5th International Conference on Indium Phosphide and Related Materials). Publ by IEEE.