Absorption and photoluminescence investigations of excitonic transitions in compressively strained InGaAs/InGaAlAs multiple quantum wells

Woo Young Choi, Yuzo Hirayama, Clifton G. Fonstad

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

We present the results of our investigations in which excitonic transitions in compressively strained InGaAs multiple QWs on InP are studied by absorption and photoluminescence(PL) measurements. Specifically, quantitative exciton parameters such as transitions energies, exciton binding energies and radii are estimated from absorption measurements. Comparison is made between strained and lattice-matched QWs. From PL measurements, luminescence characteristics are qualitatively analyzed as a function of well thickness and temperature.

Original languageEnglish
Title of host publication1993 IEEE 5th International Conference on Indium Phosphide and Related Materials
PublisherPubl by IEEE
Pages477-480
Number of pages4
ISBN (Print)0780309944
Publication statusPublished - 1993 Jan 1
Event1993 IEEE International Symposium on Circuits and Systems; Part 1 (of 4) - Paris, Fr
Duration: 1993 Apr 191993 Apr 22

Other

Other1993 IEEE International Symposium on Circuits and Systems; Part 1 (of 4)
CityParis, Fr
Period93/4/1993/4/22

Fingerprint

Semiconductor quantum wells
Photoluminescence
Excitons
Electron transitions
Binding energy
Luminescence
Temperature

All Science Journal Classification (ASJC) codes

  • Engineering(all)

Cite this

Choi, W. Y., Hirayama, Y., & Fonstad, C. G. (1993). Absorption and photoluminescence investigations of excitonic transitions in compressively strained InGaAs/InGaAlAs multiple quantum wells. In 1993 IEEE 5th International Conference on Indium Phosphide and Related Materials (pp. 477-480). Publ by IEEE.
Choi, Woo Young ; Hirayama, Yuzo ; Fonstad, Clifton G. / Absorption and photoluminescence investigations of excitonic transitions in compressively strained InGaAs/InGaAlAs multiple quantum wells. 1993 IEEE 5th International Conference on Indium Phosphide and Related Materials. Publ by IEEE, 1993. pp. 477-480
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Choi, WY, Hirayama, Y & Fonstad, CG 1993, Absorption and photoluminescence investigations of excitonic transitions in compressively strained InGaAs/InGaAlAs multiple quantum wells. in 1993 IEEE 5th International Conference on Indium Phosphide and Related Materials. Publ by IEEE, pp. 477-480, 1993 IEEE International Symposium on Circuits and Systems; Part 1 (of 4), Paris, Fr, 93/4/19.

Absorption and photoluminescence investigations of excitonic transitions in compressively strained InGaAs/InGaAlAs multiple quantum wells. / Choi, Woo Young; Hirayama, Yuzo; Fonstad, Clifton G.

1993 IEEE 5th International Conference on Indium Phosphide and Related Materials. Publ by IEEE, 1993. p. 477-480.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

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N2 - We present the results of our investigations in which excitonic transitions in compressively strained InGaAs multiple QWs on InP are studied by absorption and photoluminescence(PL) measurements. Specifically, quantitative exciton parameters such as transitions energies, exciton binding energies and radii are estimated from absorption measurements. Comparison is made between strained and lattice-matched QWs. From PL measurements, luminescence characteristics are qualitatively analyzed as a function of well thickness and temperature.

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Choi WY, Hirayama Y, Fonstad CG. Absorption and photoluminescence investigations of excitonic transitions in compressively strained InGaAs/InGaAlAs multiple quantum wells. In 1993 IEEE 5th International Conference on Indium Phosphide and Related Materials. Publ by IEEE. 1993. p. 477-480