Absorption and photoluminescence investigations of excitonic transitions in compressively strained InGaAs/InGaAlAs multiple quantum wells

Woo Young Choi; Yuzo Hirayama; Clifton G. Fonstad

Absorption and photoluminescence investigations of excitonic transitions in compressively strained InGaAs/InGaAlAs multiple quantum wells

Woo Young Choi, Yuzo Hirayama, Clifton G. Fonstad

Department of Electrical and Electronic Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

1 Citation (Scopus)

Abstract

We present the results of our investigations in which excitonic transitions in compressively strained InGaAs multiple QWs on InP are studied by absorption and photoluminescence(PL) measurements. Specifically, quantitative exciton parameters such as transitions energies, exciton binding energies and radii are estimated from absorption measurements. Comparison is made between strained and lattice-matched QWs. From PL measurements, luminescence characteristics are qualitatively analyzed as a function of well thickness and temperature.

Original language	English
Title of host publication	1993 IEEE 5th International Conference on Indium Phosphide and Related Materials
Publisher	Publ by IEEE
Pages	477-480
Number of pages	4
ISBN (Print)	0780309944
Publication status	Published - 1993
Event	1993 IEEE International Symposium on Circuits and Systems; Part 1 (of 4) - Paris, Fr Duration: 1993 Apr 19 → 1993 Apr 22

Publication series

Name	1993 IEEE 5th International Conference on Indium Phosphide and Related Materials

Other

Other	1993 IEEE International Symposium on Circuits and Systems; Part 1 (of 4)
City	Paris, Fr
Period	93/4/19 → 93/4/22

All Science Journal Classification (ASJC) codes

Engineering(all)

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Choi, W. Y., Hirayama, Y., & Fonstad, C. G. (1993). Absorption and photoluminescence investigations of excitonic transitions in compressively strained InGaAs/InGaAlAs multiple quantum wells. In 1993 IEEE 5th International Conference on Indium Phosphide and Related Materials (pp. 477-480). (1993 IEEE 5th International Conference on Indium Phosphide and Related Materials). Publ by IEEE.

Choi, Woo Young ; Hirayama, Yuzo ; Fonstad, Clifton G. / Absorption and photoluminescence investigations of excitonic transitions in compressively strained InGaAs/InGaAlAs multiple quantum wells. 1993 IEEE 5th International Conference on Indium Phosphide and Related Materials. Publ by IEEE, 1993. pp. 477-480 (1993 IEEE 5th International Conference on Indium Phosphide and Related Materials).

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title = "Absorption and photoluminescence investigations of excitonic transitions in compressively strained InGaAs/InGaAlAs multiple quantum wells",

abstract = "We present the results of our investigations in which excitonic transitions in compressively strained InGaAs multiple QWs on InP are studied by absorption and photoluminescence(PL) measurements. Specifically, quantitative exciton parameters such as transitions energies, exciton binding energies and radii are estimated from absorption measurements. Comparison is made between strained and lattice-matched QWs. From PL measurements, luminescence characteristics are qualitatively analyzed as a function of well thickness and temperature.",

author = "Choi, {Woo Young} and Yuzo Hirayama and Fonstad, {Clifton G.}",

year = "1993",

language = "English",

isbn = "0780309944",

series = "1993 IEEE 5th International Conference on Indium Phosphide and Related Materials",

publisher = "Publ by IEEE",

pages = "477--480",

booktitle = "1993 IEEE 5th International Conference on Indium Phosphide and Related Materials",

note = "1993 IEEE International Symposium on Circuits and Systems; Part 1 (of 4) ; Conference date: 19-04-1993 Through 22-04-1993",

}

Choi, WY, Hirayama, Y & Fonstad, CG 1993, Absorption and photoluminescence investigations of excitonic transitions in compressively strained InGaAs/InGaAlAs multiple quantum wells. in 1993 IEEE 5th International Conference on Indium Phosphide and Related Materials. 1993 IEEE 5th International Conference on Indium Phosphide and Related Materials, Publ by IEEE, pp. 477-480, 1993 IEEE International Symposium on Circuits and Systems; Part 1 (of 4), Paris, Fr, 93/4/19.

Absorption and photoluminescence investigations of excitonic transitions in compressively strained InGaAs/InGaAlAs multiple quantum wells. / Choi, Woo Young; Hirayama, Yuzo; Fonstad, Clifton G.

1993 IEEE 5th International Conference on Indium Phosphide and Related Materials. Publ by IEEE, 1993. p. 477-480 (1993 IEEE 5th International Conference on Indium Phosphide and Related Materials).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

TY - GEN

T1 - Absorption and photoluminescence investigations of excitonic transitions in compressively strained InGaAs/InGaAlAs multiple quantum wells

AU - Choi, Woo Young

AU - Hirayama, Yuzo

AU - Fonstad, Clifton G.

PY - 1993

Y1 - 1993

N2 - We present the results of our investigations in which excitonic transitions in compressively strained InGaAs multiple QWs on InP are studied by absorption and photoluminescence(PL) measurements. Specifically, quantitative exciton parameters such as transitions energies, exciton binding energies and radii are estimated from absorption measurements. Comparison is made between strained and lattice-matched QWs. From PL measurements, luminescence characteristics are qualitatively analyzed as a function of well thickness and temperature.

AB - We present the results of our investigations in which excitonic transitions in compressively strained InGaAs multiple QWs on InP are studied by absorption and photoluminescence(PL) measurements. Specifically, quantitative exciton parameters such as transitions energies, exciton binding energies and radii are estimated from absorption measurements. Comparison is made between strained and lattice-matched QWs. From PL measurements, luminescence characteristics are qualitatively analyzed as a function of well thickness and temperature.

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UR - http://www.scopus.com/inward/citedby.url?scp=0027290151&partnerID=8YFLogxK

M3 - Conference contribution

AN - SCOPUS:0027290151

SN - 0780309944

T3 - 1993 IEEE 5th International Conference on Indium Phosphide and Related Materials

SP - 477

EP - 480

BT - 1993 IEEE 5th International Conference on Indium Phosphide and Related Materials

PB - Publ by IEEE

T2 - 1993 IEEE International Symposium on Circuits and Systems; Part 1 (of 4)

Y2 - 19 April 1993 through 22 April 1993

ER -

Choi WY, Hirayama Y, Fonstad CG. Absorption and photoluminescence investigations of excitonic transitions in compressively strained InGaAs/InGaAlAs multiple quantum wells. In 1993 IEEE 5th International Conference on Indium Phosphide and Related Materials. Publ by IEEE. 1993. p. 477-480. (1993 IEEE 5th International Conference on Indium Phosphide and Related Materials).

Absorption and photoluminescence investigations of excitonic transitions in compressively strained InGaAs/InGaAlAs multiple quantum wells

Abstract

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