Accelerated formation of metal oxide thin film at 200 c using oxygen supplied by a nitric acid additive and residual organic suction vacuum annealing for thin-film transistor applications
Dive into the research topics of 'Accelerated formation of metal oxide thin film at 200 c using oxygen supplied by a nitric acid additive and residual organic suction vacuum annealing for thin-film transistor applications'. Together they form a unique fingerprint.