Accurate measurement of atomic chlorine radical density in process plasma with spatially resolvable optical emission spectrometer

Changhoon Oh, Minwook Kang, Jae Won Hahn

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

We measure the density of atomic chlorine radicals in inductive coupled plasma (ICP) with an optical emission spectrometer (OES). Our results revealed a transition point in the dissociation rate of molecular chlorine with respect to radio frequency (RF) power; above the transition point, the signal interference in the measurement of atomic chlorine radical density by dissociated molecular chlorine becomes negligibly small. Based on the dissociation rate of the molecular chlorine, we determine appropriate conditions for accurate measurement of atomic chlorine radical density with an uncertainty of less than 2.4%. By applying argon-based optical actinometry, we measure the distribution of atomic chlorine radical density on a 12-inch wafer to predict the chrome ICP etch process used to fabricate lithographic photomasks in the semiconductor industry. We also find that the distribution of atomic chlorine radical density is in good agreement with the etch rate of the chrome thin film.

Original languageEnglish
Pages (from-to)1919-1924
Number of pages6
JournalInternational Journal of Precision Engineering and Manufacturing
Volume16
Issue number9
DOIs
Publication statusPublished - 2015 Aug 6

Fingerprint

Chlorine
Spectrometers
Plasmas
Photomasks
Signal interference
Argon
Semiconductor materials
Thin films
Industry

All Science Journal Classification (ASJC) codes

  • Mechanical Engineering
  • Industrial and Manufacturing Engineering
  • Electrical and Electronic Engineering

Cite this

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abstract = "We measure the density of atomic chlorine radicals in inductive coupled plasma (ICP) with an optical emission spectrometer (OES). Our results revealed a transition point in the dissociation rate of molecular chlorine with respect to radio frequency (RF) power; above the transition point, the signal interference in the measurement of atomic chlorine radical density by dissociated molecular chlorine becomes negligibly small. Based on the dissociation rate of the molecular chlorine, we determine appropriate conditions for accurate measurement of atomic chlorine radical density with an uncertainty of less than 2.4{\%}. By applying argon-based optical actinometry, we measure the distribution of atomic chlorine radical density on a 12-inch wafer to predict the chrome ICP etch process used to fabricate lithographic photomasks in the semiconductor industry. We also find that the distribution of atomic chlorine radical density is in good agreement with the etch rate of the chrome thin film.",
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AU - Oh, Changhoon

AU - Kang, Minwook

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AB - We measure the density of atomic chlorine radicals in inductive coupled plasma (ICP) with an optical emission spectrometer (OES). Our results revealed a transition point in the dissociation rate of molecular chlorine with respect to radio frequency (RF) power; above the transition point, the signal interference in the measurement of atomic chlorine radical density by dissociated molecular chlorine becomes negligibly small. Based on the dissociation rate of the molecular chlorine, we determine appropriate conditions for accurate measurement of atomic chlorine radical density with an uncertainty of less than 2.4%. By applying argon-based optical actinometry, we measure the distribution of atomic chlorine radical density on a 12-inch wafer to predict the chrome ICP etch process used to fabricate lithographic photomasks in the semiconductor industry. We also find that the distribution of atomic chlorine radical density is in good agreement with the etch rate of the chrome thin film.

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