Achievement of a high channel strain via dry oxidation of recessed source/drain Si1-x Gex structures

J. H. Yoo, S. W. Kim, S. M. Koo, D. H. Ko, H. J. Lee

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11 Citations (Scopus)

Abstract

This study proposes a method of acquiring a high channel strain by locally oxidizing recessed Si1-x Gex source/drain structures and forming a Ge condensation layer as an effective stressor. Combination of several transmission electron microscopy characterization techniques including nanobeam diffraction allowed us to analyze the thickness and composition of the Ge condensation layer formed upon oxidation, and the evolution of the channel strain. Nanobeam diffraction results demonstrate that this method can be critically used to effectively increase the channel strain.

Original languageEnglish
Article number133121
JournalApplied Physics Letters
Volume98
Issue number13
DOIs
Publication statusPublished - 2011 Mar 28

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

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