Achievement of a high channel strain via dry oxidation of recessed source/drain Si1-x Gex structures

J. H. Yoo, S. W. Kim, S. M. Koo, D. H. Ko, H. J. Lee

Research output: Contribution to journalArticlepeer-review

11 Citations (Scopus)


This study proposes a method of acquiring a high channel strain by locally oxidizing recessed Si1-x Gex source/drain structures and forming a Ge condensation layer as an effective stressor. Combination of several transmission electron microscopy characterization techniques including nanobeam diffraction allowed us to analyze the thickness and composition of the Ge condensation layer formed upon oxidation, and the evolution of the channel strain. Nanobeam diffraction results demonstrate that this method can be critically used to effectively increase the channel strain.

Original languageEnglish
Article number133121
JournalApplied Physics Letters
Issue number13
Publication statusPublished - 2011 Mar 28

Bibliographical note

Funding Information:
This work was financially supported by the “Next-generation Substrate technology for high performance semiconductor devices (Grant No. KI002083)” of MKE and “System IC 2010” project of the Korea Ministry of Science and Technology and Ministry of Commerce, Industry and Energy.

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)


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