Activation of sputter-processed indium-gallium-zinc oxide films by simultaneous ultraviolet and thermal treatments

Young Jun Tak, Byung Du Ahn, Sung Pyo Park, Si Joon Kim, Ae Ran Song, Kwun Bum Chung, Hyun Jae Kim

Research output: Contribution to journalArticlepeer-review

54 Citations (Scopus)

Abstract

Indium-gallium-zinc oxide (IGZO) films, deposited by sputtering at room temperature, still require activation to achieve satisfactory semiconductor characteristics. Thermal treatment is typically carried out at temperatures above 300 °C. Here, we propose activating sputter-processed IGZO films using simultaneous ultraviolet and thermal (SUT) treatments to decrease the required temperature and enhance their electrical characteristics and stability. SUT treatment effectively decreased the amount of carbon residues and the number of defect sites related to oxygen vacancies and increased the number of metal oxide (M-O) bonds through the decomposition-rearrangement of M-O bonds and oxygen radicals. Activation of IGZO TFTs using the SUT treatment reduced the processing temperature to 150 °C and improved various electrical performance metrics including mobility, on-off ratio, and threshold voltage shift (positive bias stress for 10,000 s) from 3.23 to 15.81 cm 2/Vs, 3.96 × 10 7 to 1.03 × 10 8, and 11.2 to 7.2 V, respectively.

Original languageEnglish
Article number21869
JournalScientific reports
Volume6
DOIs
Publication statusPublished - 2016 Feb 23

Bibliographical note

Funding Information:
This work was supported by Samsung Display and the National Research Foundation of Korea (NRF) grant funded by the Korea government (MSIP) (No. 2011-0028819 and No.NRF-2013R1A1A2A10005186).

All Science Journal Classification (ASJC) codes

  • General

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