Additive mobility enhancement and off-state current reduction in SiGe channel pMOSFETs with optimized Si cap and high-k metal gate stacks

Jungwoo Oh, Prashant Majhi, Raj Jammy, Raymond Joe, Anthony Dip, Takuya Sugawara, Yasushi Akasaka, Takanobu Kaitsuka, Tsunetoshi Arikado, Masayuki Tomoyasu

Research output: Chapter in Book/Report/Conference proceedingConference contribution

11 Citations (Scopus)

Abstract

We have demonstrated high mobility pMOSFETs on high quality epitaxial SiGe films selectively grown on Si (100) substrates. With a Si cap processed on SiGe channels, HfSiO2 high-k gate dielectrics exhibited low C-V hysteresis (<10 mV), interface trap density (7.5×1010), and gate leakage current (∼10-2 A/cm2 at an EOT of 13.4Å), which are comparable to gate stack on Si channels. The mobility enhancement afforded intrinsically by the SiGe channel (60%) is further increased by a Si cap (40%) process, resulting in a combined ∼100% enhancement over Si channels. The Si cap process also mitigates the low potential barrier issues of SiGe channels, which are major causes of the high off-state current of small bandgap energy SiGe pMOSFETs, by improving gate control over the channel.

Original languageEnglish
Title of host publication2009 International Symposium on VLSI Technology, Systems, and Applications, VLSI-TSA '09
Pages22-23
Number of pages2
DOIs
Publication statusPublished - 2009 Dec 1
Event2009 International Symposium on VLSI Technology, Systems, and Applications, VLSI-TSA '09 - Hsinchu, Taiwan, Province of China
Duration: 2009 Apr 272009 Apr 29

Publication series

NameInternational Symposium on VLSI Technology, Systems, and Applications, Proceedings

Other

Other2009 International Symposium on VLSI Technology, Systems, and Applications, VLSI-TSA '09
CountryTaiwan, Province of China
CityHsinchu
Period09/4/2709/4/29

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All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

Cite this

Oh, J., Majhi, P., Jammy, R., Joe, R., Dip, A., Sugawara, T., Akasaka, Y., Kaitsuka, T., Arikado, T., & Tomoyasu, M. (2009). Additive mobility enhancement and off-state current reduction in SiGe channel pMOSFETs with optimized Si cap and high-k metal gate stacks. In 2009 International Symposium on VLSI Technology, Systems, and Applications, VLSI-TSA '09 (pp. 22-23). [5159274] (International Symposium on VLSI Technology, Systems, and Applications, Proceedings). https://doi.org/10.1109/VTSA.2009.5159274