Additive mobility enhancement and off-state current reduction in SiGe channel pMOSFETs with optimized Si cap and high-k metal gate stacks

Jungwoo Oh, Prashant Majhi, Raj Jammy, Raymond Joe, Anthony Dip, Takuya Sugawara, Yasushi Akasaka, Takanobu Kaitsuka, Tsunetoshi Arikado, Masayuki Tomoyasu

Research output: Chapter in Book/Report/Conference proceedingConference contribution

11 Citations (Scopus)

Abstract

We have demonstrated high mobility pMOSFETs on high quality epitaxial SiGe films selectively grown on Si (100) substrates. With a Si cap processed on SiGe channels, HfSiO2 high-k gate dielectrics exhibited low C-V hysteresis (<10 mV), interface trap density (7.5×1010), and gate leakage current (∼10-2 A/cm2 at an EOT of 13.4Å), which are comparable to gate stack on Si channels. The mobility enhancement afforded intrinsically by the SiGe channel (60%) is further increased by a Si cap (40%) process, resulting in a combined ∼100% enhancement over Si channels. The Si cap process also mitigates the low potential barrier issues of SiGe channels, which are major causes of the high off-state current of small bandgap energy SiGe pMOSFETs, by improving gate control over the channel.

Original languageEnglish
Title of host publication2009 International Symposium on VLSI Technology, Systems, and Applications, VLSI-TSA '09
Pages22-23
Number of pages2
DOIs
Publication statusPublished - 2009 Dec 1
Event2009 International Symposium on VLSI Technology, Systems, and Applications, VLSI-TSA '09 - Hsinchu, Taiwan, Province of China
Duration: 2009 Apr 272009 Apr 29

Publication series

NameInternational Symposium on VLSI Technology, Systems, and Applications, Proceedings

Other

Other2009 International Symposium on VLSI Technology, Systems, and Applications, VLSI-TSA '09
CountryTaiwan, Province of China
CityHsinchu
Period09/4/2709/4/29

Fingerprint

Gate dielectrics
caps
Leakage currents
Hysteresis
Energy gap
Metals
augmentation
Substrates
metals
leakage
hysteresis
traps
causes

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

Cite this

Oh, J., Majhi, P., Jammy, R., Joe, R., Dip, A., Sugawara, T., ... Tomoyasu, M. (2009). Additive mobility enhancement and off-state current reduction in SiGe channel pMOSFETs with optimized Si cap and high-k metal gate stacks. In 2009 International Symposium on VLSI Technology, Systems, and Applications, VLSI-TSA '09 (pp. 22-23). [5159274] (International Symposium on VLSI Technology, Systems, and Applications, Proceedings). https://doi.org/10.1109/VTSA.2009.5159274
Oh, Jungwoo ; Majhi, Prashant ; Jammy, Raj ; Joe, Raymond ; Dip, Anthony ; Sugawara, Takuya ; Akasaka, Yasushi ; Kaitsuka, Takanobu ; Arikado, Tsunetoshi ; Tomoyasu, Masayuki. / Additive mobility enhancement and off-state current reduction in SiGe channel pMOSFETs with optimized Si cap and high-k metal gate stacks. 2009 International Symposium on VLSI Technology, Systems, and Applications, VLSI-TSA '09. 2009. pp. 22-23 (International Symposium on VLSI Technology, Systems, and Applications, Proceedings).
@inproceedings{ac0d358bf116403a87ea653bb288bf02,
title = "Additive mobility enhancement and off-state current reduction in SiGe channel pMOSFETs with optimized Si cap and high-k metal gate stacks",
abstract = "We have demonstrated high mobility pMOSFETs on high quality epitaxial SiGe films selectively grown on Si (100) substrates. With a Si cap processed on SiGe channels, HfSiO2 high-k gate dielectrics exhibited low C-V hysteresis (<10 mV), interface trap density (7.5×1010), and gate leakage current (∼10-2 A/cm2 at an EOT of 13.4{\AA}), which are comparable to gate stack on Si channels. The mobility enhancement afforded intrinsically by the SiGe channel (60{\%}) is further increased by a Si cap (40{\%}) process, resulting in a combined ∼100{\%} enhancement over Si channels. The Si cap process also mitigates the low potential barrier issues of SiGe channels, which are major causes of the high off-state current of small bandgap energy SiGe pMOSFETs, by improving gate control over the channel.",
author = "Jungwoo Oh and Prashant Majhi and Raj Jammy and Raymond Joe and Anthony Dip and Takuya Sugawara and Yasushi Akasaka and Takanobu Kaitsuka and Tsunetoshi Arikado and Masayuki Tomoyasu",
year = "2009",
month = "12",
day = "1",
doi = "10.1109/VTSA.2009.5159274",
language = "English",
isbn = "9781424427857",
series = "International Symposium on VLSI Technology, Systems, and Applications, Proceedings",
pages = "22--23",
booktitle = "2009 International Symposium on VLSI Technology, Systems, and Applications, VLSI-TSA '09",

}

Oh, J, Majhi, P, Jammy, R, Joe, R, Dip, A, Sugawara, T, Akasaka, Y, Kaitsuka, T, Arikado, T & Tomoyasu, M 2009, Additive mobility enhancement and off-state current reduction in SiGe channel pMOSFETs with optimized Si cap and high-k metal gate stacks. in 2009 International Symposium on VLSI Technology, Systems, and Applications, VLSI-TSA '09., 5159274, International Symposium on VLSI Technology, Systems, and Applications, Proceedings, pp. 22-23, 2009 International Symposium on VLSI Technology, Systems, and Applications, VLSI-TSA '09, Hsinchu, Taiwan, Province of China, 09/4/27. https://doi.org/10.1109/VTSA.2009.5159274

Additive mobility enhancement and off-state current reduction in SiGe channel pMOSFETs with optimized Si cap and high-k metal gate stacks. / Oh, Jungwoo; Majhi, Prashant; Jammy, Raj; Joe, Raymond; Dip, Anthony; Sugawara, Takuya; Akasaka, Yasushi; Kaitsuka, Takanobu; Arikado, Tsunetoshi; Tomoyasu, Masayuki.

2009 International Symposium on VLSI Technology, Systems, and Applications, VLSI-TSA '09. 2009. p. 22-23 5159274 (International Symposium on VLSI Technology, Systems, and Applications, Proceedings).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

TY - GEN

T1 - Additive mobility enhancement and off-state current reduction in SiGe channel pMOSFETs with optimized Si cap and high-k metal gate stacks

AU - Oh, Jungwoo

AU - Majhi, Prashant

AU - Jammy, Raj

AU - Joe, Raymond

AU - Dip, Anthony

AU - Sugawara, Takuya

AU - Akasaka, Yasushi

AU - Kaitsuka, Takanobu

AU - Arikado, Tsunetoshi

AU - Tomoyasu, Masayuki

PY - 2009/12/1

Y1 - 2009/12/1

N2 - We have demonstrated high mobility pMOSFETs on high quality epitaxial SiGe films selectively grown on Si (100) substrates. With a Si cap processed on SiGe channels, HfSiO2 high-k gate dielectrics exhibited low C-V hysteresis (<10 mV), interface trap density (7.5×1010), and gate leakage current (∼10-2 A/cm2 at an EOT of 13.4Å), which are comparable to gate stack on Si channels. The mobility enhancement afforded intrinsically by the SiGe channel (60%) is further increased by a Si cap (40%) process, resulting in a combined ∼100% enhancement over Si channels. The Si cap process also mitigates the low potential barrier issues of SiGe channels, which are major causes of the high off-state current of small bandgap energy SiGe pMOSFETs, by improving gate control over the channel.

AB - We have demonstrated high mobility pMOSFETs on high quality epitaxial SiGe films selectively grown on Si (100) substrates. With a Si cap processed on SiGe channels, HfSiO2 high-k gate dielectrics exhibited low C-V hysteresis (<10 mV), interface trap density (7.5×1010), and gate leakage current (∼10-2 A/cm2 at an EOT of 13.4Å), which are comparable to gate stack on Si channels. The mobility enhancement afforded intrinsically by the SiGe channel (60%) is further increased by a Si cap (40%) process, resulting in a combined ∼100% enhancement over Si channels. The Si cap process also mitigates the low potential barrier issues of SiGe channels, which are major causes of the high off-state current of small bandgap energy SiGe pMOSFETs, by improving gate control over the channel.

UR - http://www.scopus.com/inward/record.url?scp=77950143676&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=77950143676&partnerID=8YFLogxK

U2 - 10.1109/VTSA.2009.5159274

DO - 10.1109/VTSA.2009.5159274

M3 - Conference contribution

AN - SCOPUS:77950143676

SN - 9781424427857

T3 - International Symposium on VLSI Technology, Systems, and Applications, Proceedings

SP - 22

EP - 23

BT - 2009 International Symposium on VLSI Technology, Systems, and Applications, VLSI-TSA '09

ER -

Oh J, Majhi P, Jammy R, Joe R, Dip A, Sugawara T et al. Additive mobility enhancement and off-state current reduction in SiGe channel pMOSFETs with optimized Si cap and high-k metal gate stacks. In 2009 International Symposium on VLSI Technology, Systems, and Applications, VLSI-TSA '09. 2009. p. 22-23. 5159274. (International Symposium on VLSI Technology, Systems, and Applications, Proceedings). https://doi.org/10.1109/VTSA.2009.5159274