Adhesion and microstructure of Ni contacts to 3C-SiC

Soo Chang Kang, Moo Whan Shin

Research output: Contribution to journalConference article

Abstract

This paper reports on the microstructure-adhesion property relationship in Ni/3C-SiC ohmic contacts. The microstructures of the surface and the interface in the Ni/3C-SiC layers annealed at various temperatures were investigated using the X-ray scattering techniques. The adhesion of the Ni on the 3C-SiC surface was examined by the scratch tester in the acoustic emission-frictional force mode. The Ni/SiC layer annealed at 500 °C exhibits the highest surface roughness with the lowest interface roughness. The Ni/SiC adhesion force was shown to be decreased with the annealing temperature up to 500 °C. As the annealing temperature is higher than 500 °C, the domain size of the NiSi2 silicides is increased with enhancement of crystallinity. The crystallinity enhancement is attributed, presumably, to the low mismatch of lattice constants between the silicide and 3C-SiC.

Original languageEnglish
Pages (from-to)II/-
JournalMaterials Science Forum
Volume338
Publication statusPublished - 2000
EventICSCRM '99: The International Conference on Silicon Carbide and Related Materials - Research Triangle Park, NC, USA
Duration: 1999 Oct 101999 Oct 15

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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