High-performance, solution-processed transparent and flexible zinc oxide (ZnO) nanorods (NRs)-based single layer network structured thin film transistors (TFTs) were developed on polyethylene terephthalate (PET) substrate at 100 °C. Keeping the process-temperature under 100 °C, we have improved the device performance by introducing three low temperature-based techniques; regrowing ZnO to fill the void spaces in a single layer network of ZnO NRs, passivating the back channel with polymer, and adopting ZrO2 as the high-k dielectric. Notably, high-k amorphous ZrO2 was synthesized and deposited using a novel method at an unprecedented temperature of 100 °C. Using these methods, the TFTs exhibited a high mobility of 1.77 cm2/V·s. An insignificant reduction of 2.18% in mobility value after 3000 cycles of dynamic bending at a radius of curvature of 20 mm indicated the robust mechanical nature of the flexible ZnO NRs SLNS TFTs.
Bibliographical notePublisher Copyright:
© 2016 American Chemical Society.
All Science Journal Classification (ASJC) codes
- Materials Science(all)