Advanced atomic force microscopy-based techniques for nanoscale characterization of switching devices for emerging neuromorphic applications

Young Min Kim; Jihye Lee; Deok Jin Jeon; Si Eun Oh; Jong Souk Yeo

doi:10.1186/s42649-021-00056-9

Advanced atomic force microscopy-based techniques for nanoscale characterization of switching devices for emerging neuromorphic applications

Young Min Kim, Jihye Lee, Deok Jin Jeon, Si Eun Oh, Jong Souk Yeo

School of Integrated Technology

Research output: Contribution to journal › Review article › peer-review

4 Citations (Scopus)

Abstract

Neuromorphic systems require integrated structures with high-density memory and selector devices to avoid interference and recognition errors between neighboring memory cells. To improve the performance of a selector device, it is important to understand the characteristics of the switching process. As changes by switching cycle occur at local nanoscale areas, a high-resolution analysis method is needed to investigate this phenomenon. Atomic force microscopy (AFM) is used to analyze the local changes because it offers nanoscale detection with high-resolution capabilities. This review introduces various types of AFM such as conductive AFM (C-AFM), electrostatic force microscopy (EFM), and Kelvin probe force microscopy (KPFM) to study switching behaviors.

Original language	English
Article number	7
Journal	Applied Microscopy
Volume	51
Issue number	1
DOIs	https://doi.org/10.1186/s42649-021-00056-9
Publication status	Published - 2021 Dec

Bibliographical note

Funding Information:
This research was supported by the Ministry of Trade and Industry, the Energy/Korea Evaluation Institute of Industrial Technology (MOTIE/KEIT, project number 10080625), the Korea Semiconductor Research Consortium (KSRC) program for the development of future semiconductor devices, and Samsung Electronics. This study was also supported under the framework of the Center for Social Engagement program managed by the Institute of Convergence Science, Yonsei University.

Publisher Copyright:
© 2021, The Author(s).

All Science Journal Classification (ASJC) codes

Microbiology
Applied Microbiology and Biotechnology

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10.1186/s42649-021-00056-9

Cite this

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title = "Advanced atomic force microscopy-based techniques for nanoscale characterization of switching devices for emerging neuromorphic applications",

abstract = "Neuromorphic systems require integrated structures with high-density memory and selector devices to avoid interference and recognition errors between neighboring memory cells. To improve the performance of a selector device, it is important to understand the characteristics of the switching process. As changes by switching cycle occur at local nanoscale areas, a high-resolution analysis method is needed to investigate this phenomenon. Atomic force microscopy (AFM) is used to analyze the local changes because it offers nanoscale detection with high-resolution capabilities. This review introduces various types of AFM such as conductive AFM (C-AFM), electrostatic force microscopy (EFM), and Kelvin probe force microscopy (KPFM) to study switching behaviors.",

author = "Kim, {Young Min} and Jihye Lee and Jeon, {Deok Jin} and Oh, {Si Eun} and Yeo, {Jong Souk}",

note = "Funding Information: This research was supported by the Ministry of Trade and Industry, the Energy/Korea Evaluation Institute of Industrial Technology (MOTIE/KEIT, project number 10080625), the Korea Semiconductor Research Consortium (KSRC) program for the development of future semiconductor devices, and Samsung Electronics. This study was also supported under the framework of the Center for Social Engagement program managed by the Institute of Convergence Science, Yonsei University. Publisher Copyright: {\textcopyright} 2021, The Author(s).",

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doi = "10.1186/s42649-021-00056-9",

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AU - Kim, Young Min

AU - Lee, Jihye

AU - Jeon, Deok Jin

AU - Oh, Si Eun

AU - Yeo, Jong Souk

N1 - Funding Information: This research was supported by the Ministry of Trade and Industry, the Energy/Korea Evaluation Institute of Industrial Technology (MOTIE/KEIT, project number 10080625), the Korea Semiconductor Research Consortium (KSRC) program for the development of future semiconductor devices, and Samsung Electronics. This study was also supported under the framework of the Center for Social Engagement program managed by the Institute of Convergence Science, Yonsei University. Publisher Copyright: © 2021, The Author(s).

PY - 2021/12

Y1 - 2021/12

N2 - Neuromorphic systems require integrated structures with high-density memory and selector devices to avoid interference and recognition errors between neighboring memory cells. To improve the performance of a selector device, it is important to understand the characteristics of the switching process. As changes by switching cycle occur at local nanoscale areas, a high-resolution analysis method is needed to investigate this phenomenon. Atomic force microscopy (AFM) is used to analyze the local changes because it offers nanoscale detection with high-resolution capabilities. This review introduces various types of AFM such as conductive AFM (C-AFM), electrostatic force microscopy (EFM), and Kelvin probe force microscopy (KPFM) to study switching behaviors.

AB - Neuromorphic systems require integrated structures with high-density memory and selector devices to avoid interference and recognition errors between neighboring memory cells. To improve the performance of a selector device, it is important to understand the characteristics of the switching process. As changes by switching cycle occur at local nanoscale areas, a high-resolution analysis method is needed to investigate this phenomenon. Atomic force microscopy (AFM) is used to analyze the local changes because it offers nanoscale detection with high-resolution capabilities. This review introduces various types of AFM such as conductive AFM (C-AFM), electrostatic force microscopy (EFM), and Kelvin probe force microscopy (KPFM) to study switching behaviors.

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Advanced atomic force microscopy-based techniques for nanoscale characterization of switching devices for emerging neuromorphic applications

Abstract

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