Various functions are introduced from a unique field-effect device structure which combines or merges transition metal dichalcogenide (TMD) and InGaZnO (IGZO) channels together on one common gate: multivalue field effect transistors (FETs), photodetecting devices, and signal frequency doublers. Judging by the individual transfer characteristics of two FET devices, the n-IGZO FET always shows higher drain current and more positive-side turn-on voltage than those of n-TMD channel FETs. As a result, a combined transfer characteristic presents two-step drain current levels, so that their load-resistance inverter might demonstrate three value output voltage signals. Those ternary value inverter devices with n-IGZO/n-ReSe2 or n-IGZO/n-WSe2 combination also operate as a photodetector, responding to visible/near infrared (IR) photons with a fast photodynamics of 30 ms rising/falling time. The most interesting is the ambipolar device achieved from n-IGZO FET/p-MoTe2 FET combination circuit. The ambipolar device circuit operates as an alternating current (AC) signal frequency doubler and demonstrates twofold organic light emitting diode blinking in one AC period. This unprecedented technique for the multifunctional field effect TMD devices incorporating n-IGZO FETs will open a new path toward future electronics.
Bibliographical noteFunding Information:
The authors acknowledge the financial support from NRF (NRL program: Grant No. 2017R1A2A1A05001278; SRC program, Grant No. 2017R1A5A1014862, vdWMRC center), Creative Materials Discovery Program (2015M3D1A1068061) administered by the National Research Foundation of Korea (NRF) and funded by the Ministry of Science and ICT, Republic of Korea.
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials