Advanced poly-Si TFT with fin-like channels by ELA

Huaxiang Yin, Wenxu Xianyu, Hans Cho, Xiaoxin Zhang, Jisim Jung, Doyoung Kim, Hyuck Lim, Kyungbae Park, Jongman Kim, Jangyeon Kwon, Takashi Noguchi

Research output: Contribution to journalArticle

8 Citations (Scopus)

Abstract

The advanced low-temperature polysilicon (poly-Si) thin-film transistor with three-dimensional channels of fin-like profile has been demonstrated using excimer laser annealing and unique undercut structure without any additional patterning process. This approach provides a very narrow fin-like channel in devices with high ratio of film thickness to the width as well as a high-quality poly-Si film in channels with better crystallinity for the effect of columnar-like grain growth following the shrinkage of silicon stripe after laser irradiation. Due to that and the stronger electrical stress on the channel by the multigate, the new device with a fin-like channel structure shows good characteristics of the highest mobility up to 395 cm2/V · s, a subthreshold voltage slope below 400 mV/dec, and an ON-OFF current ratio higher than 106.

Original languageEnglish
Pages (from-to)357-359
Number of pages3
JournalIEEE Electron Device Letters
Volume27
Issue number5
DOIs
Publication statusPublished - 2006 May 1

Fingerprint

Polysilicon
Excimer lasers
Silicon
Laser beam effects
Thin film transistors
Grain growth
Film thickness
Annealing
Electric potential
Temperature

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

Cite this

Yin, H., Xianyu, W., Cho, H., Zhang, X., Jung, J., Kim, D., ... Noguchi, T. (2006). Advanced poly-Si TFT with fin-like channels by ELA. IEEE Electron Device Letters, 27(5), 357-359. https://doi.org/10.1109/LED.2006.872901
Yin, Huaxiang ; Xianyu, Wenxu ; Cho, Hans ; Zhang, Xiaoxin ; Jung, Jisim ; Kim, Doyoung ; Lim, Hyuck ; Park, Kyungbae ; Kim, Jongman ; Kwon, Jangyeon ; Noguchi, Takashi. / Advanced poly-Si TFT with fin-like channels by ELA. In: IEEE Electron Device Letters. 2006 ; Vol. 27, No. 5. pp. 357-359.
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Yin, H, Xianyu, W, Cho, H, Zhang, X, Jung, J, Kim, D, Lim, H, Park, K, Kim, J, Kwon, J & Noguchi, T 2006, 'Advanced poly-Si TFT with fin-like channels by ELA', IEEE Electron Device Letters, vol. 27, no. 5, pp. 357-359. https://doi.org/10.1109/LED.2006.872901

Advanced poly-Si TFT with fin-like channels by ELA. / Yin, Huaxiang; Xianyu, Wenxu; Cho, Hans; Zhang, Xiaoxin; Jung, Jisim; Kim, Doyoung; Lim, Hyuck; Park, Kyungbae; Kim, Jongman; Kwon, Jangyeon; Noguchi, Takashi.

In: IEEE Electron Device Letters, Vol. 27, No. 5, 01.05.2006, p. 357-359.

Research output: Contribution to journalArticle

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Yin H, Xianyu W, Cho H, Zhang X, Jung J, Kim D et al. Advanced poly-Si TFT with fin-like channels by ELA. IEEE Electron Device Letters. 2006 May 1;27(5):357-359. https://doi.org/10.1109/LED.2006.872901