Advanced poly-Si TFT with fin-like channels by ELA

Huaxiang Yin, Wenxu Xianyu, Hans Cho, Xiaoxin Zhang, Jisim Jung, Doyoung Kim, Hyuck Lim, Kyungbae Park, Jongman Kim, Jangyeon Kwon, Takashi Noguchi

Research output: Contribution to journalArticle

9 Citations (Scopus)


The advanced low-temperature polysilicon (poly-Si) thin-film transistor with three-dimensional channels of fin-like profile has been demonstrated using excimer laser annealing and unique undercut structure without any additional patterning process. This approach provides a very narrow fin-like channel in devices with high ratio of film thickness to the width as well as a high-quality poly-Si film in channels with better crystallinity for the effect of columnar-like grain growth following the shrinkage of silicon stripe after laser irradiation. Due to that and the stronger electrical stress on the channel by the multigate, the new device with a fin-like channel structure shows good characteristics of the highest mobility up to 395 cm2/V · s, a subthreshold voltage slope below 400 mV/dec, and an ON-OFF current ratio higher than 106.

Original languageEnglish
Pages (from-to)357-359
Number of pages3
JournalIEEE Electron Device Letters
Issue number5
Publication statusPublished - 2006 May

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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  • Cite this

    Yin, H., Xianyu, W., Cho, H., Zhang, X., Jung, J., Kim, D., Lim, H., Park, K., Kim, J., Kwon, J., & Noguchi, T. (2006). Advanced poly-Si TFT with fin-like channels by ELA. IEEE Electron Device Letters, 27(5), 357-359.