Advanced Silicon-on-Insulator: Crystalline Silicon on Atomic Layer Deposited Beryllium Oxide

Seung Min Lee, Jung Hwan Yum, Eric S. Larsen, Woo Chul Lee, Seong Keun Kim, Christopher W. Bielawski, Jungwoo Oh

Research output: Contribution to journalArticle

4 Citations (Scopus)


Silicon-on-insulator (SOI) technology improves the performance of devices by reducing parasitic capacitance. Devices based on SOI or silicon-on-sapphire technology are primarily used in high-performance radio frequency (RF) and radiation sensitive applications as well as for reducing the short channel effects in microelectronic devices. Despite their advantages, the high substrate cost and overheating problems associated with complexities in substrate fabrication as well as the low thermal conductivity of silicon oxide prevent broad applications of this technology. To overcome these challenges, we describe a new approach of using beryllium oxide (BeO). The use of atomic layer deposition (ALD) for producing this material results in lowering the SOI wafer production cost. Furthermore, the use of BeO exhibiting a high thermal conductivity might minimize the self-heating issues. We show that crystalline Si can be grown on ALD BeO and the resultant devices exhibit potential for use in advanced SOI technology applications.

Original languageEnglish
Article number13205
JournalScientific reports
Issue number1
Publication statusPublished - 2017 Dec 1


All Science Journal Classification (ASJC) codes

  • General

Cite this

Min Lee, S., Hwan Yum, J., Larsen, E. S., Chul Lee, W., Keun Kim, S., Bielawski, C. W., & Oh, J. (2017). Advanced Silicon-on-Insulator: Crystalline Silicon on Atomic Layer Deposited Beryllium Oxide. Scientific reports, 7(1), [13205].