Silicon-on-insulator (SOI) technology improves the performance of devices by reducing parasitic capacitance. Devices based on SOI or silicon-on-sapphire technology are primarily used in high-performance radio frequency (RF) and radiation sensitive applications as well as for reducing the short channel effects in microelectronic devices. Despite their advantages, the high substrate cost and overheating problems associated with complexities in substrate fabrication as well as the low thermal conductivity of silicon oxide prevent broad applications of this technology. To overcome these challenges, we describe a new approach of using beryllium oxide (BeO). The use of atomic layer deposition (ALD) for producing this material results in lowering the SOI wafer production cost. Furthermore, the use of BeO exhibiting a high thermal conductivity might minimize the self-heating issues. We show that crystalline Si can be grown on ALD BeO and the resultant devices exhibit potential for use in advanced SOI technology applications.
Bibliographical noteFunding Information:
This research was supported by the Ministry of Science and ICT (MSIT), Korea, under the “ICT Consilience Creative Program” (IITP-2017–2017–0–01015) supervised by the IITP(Institute for Information & communications Technology Promotion). This work was supported by the Future Semiconductor Device Technology Development Program (10044735, 10048536) funded by MOTIE (Ministry of Trade, Industry & Energy) and KSRC (Korea Semiconductor Research Consortium). We are indebted to Gong Gu and Lifen Wang for insightful discussions and suggestions. We would also like to thank Sun-Phil Han of the UCRF for his help with beryllium NMR spectroscopy. JHY, ESL, and CWB are grateful to the Institute for Basic Science (IBS-R019-D1) as well as the BK21 Plus Program funded by the Ministry of Education and the National Research Foundation of Korea for their support.
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