Advanced Silicon-on-Insulator: Crystalline Silicon on Atomic Layer Deposited Beryllium Oxide

Seung Min Lee, Jung Hwan Yum, Eric S. Larsen, Woo Chul Lee, Seong Keun Kim, Christopher W. Bielawski, Jungwoo Oh

Research output: Contribution to journalArticle

3 Citations (Scopus)

Abstract

Silicon-on-insulator (SOI) technology improves the performance of devices by reducing parasitic capacitance. Devices based on SOI or silicon-on-sapphire technology are primarily used in high-performance radio frequency (RF) and radiation sensitive applications as well as for reducing the short channel effects in microelectronic devices. Despite their advantages, the high substrate cost and overheating problems associated with complexities in substrate fabrication as well as the low thermal conductivity of silicon oxide prevent broad applications of this technology. To overcome these challenges, we describe a new approach of using beryllium oxide (BeO). The use of atomic layer deposition (ALD) for producing this material results in lowering the SOI wafer production cost. Furthermore, the use of BeO exhibiting a high thermal conductivity might minimize the self-heating issues. We show that crystalline Si can be grown on ALD BeO and the resultant devices exhibit potential for use in advanced SOI technology applications.

Original languageEnglish
Article number13205
JournalScientific reports
Volume7
Issue number1
DOIs
Publication statusPublished - 2017 Dec 1

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beryllium oxides
insulators
silicon
atomic layer epitaxy
thermal conductivity
production costs
silicon oxides
microelectronics
radio frequencies
sapphire
capacitance
wafers
costs
fabrication
heating
radiation

All Science Journal Classification (ASJC) codes

  • General

Cite this

Min Lee, S., Hwan Yum, J., Larsen, E. S., Chul Lee, W., Keun Kim, S., Bielawski, C. W., & Oh, J. (2017). Advanced Silicon-on-Insulator: Crystalline Silicon on Atomic Layer Deposited Beryllium Oxide. Scientific reports, 7(1), [13205]. https://doi.org/10.1038/s41598-017-13693-6
Min Lee, Seung ; Hwan Yum, Jung ; Larsen, Eric S. ; Chul Lee, Woo ; Keun Kim, Seong ; Bielawski, Christopher W. ; Oh, Jungwoo. / Advanced Silicon-on-Insulator : Crystalline Silicon on Atomic Layer Deposited Beryllium Oxide. In: Scientific reports. 2017 ; Vol. 7, No. 1.
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Min Lee, S, Hwan Yum, J, Larsen, ES, Chul Lee, W, Keun Kim, S, Bielawski, CW & Oh, J 2017, 'Advanced Silicon-on-Insulator: Crystalline Silicon on Atomic Layer Deposited Beryllium Oxide', Scientific reports, vol. 7, no. 1, 13205. https://doi.org/10.1038/s41598-017-13693-6

Advanced Silicon-on-Insulator : Crystalline Silicon on Atomic Layer Deposited Beryllium Oxide. / Min Lee, Seung; Hwan Yum, Jung; Larsen, Eric S.; Chul Lee, Woo; Keun Kim, Seong; Bielawski, Christopher W.; Oh, Jungwoo.

In: Scientific reports, Vol. 7, No. 1, 13205, 01.12.2017.

Research output: Contribution to journalArticle

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AU - Min Lee, Seung

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AU - Keun Kim, Seong

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Min Lee S, Hwan Yum J, Larsen ES, Chul Lee W, Keun Kim S, Bielawski CW et al. Advanced Silicon-on-Insulator: Crystalline Silicon on Atomic Layer Deposited Beryllium Oxide. Scientific reports. 2017 Dec 1;7(1). 13205. https://doi.org/10.1038/s41598-017-13693-6