Advances in dielectric performance of atomically engineered Sr1.8Bi0.2Nb3O10 perovskite nanosheet thin films

Haena Yim, So Yeon Yoo, Haneul Choi, Hye Jung Chang, Seong Ju Hwang, Sahn Nahm, Minoru Osada, Ji Won Choi

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The search for new high-performance dielectric materials has attracted considerable research interest. Several mechanisms to achieve high permittivity have been proposed, such as BaTiO3-based perovskites or CaCu3Ti4O12. However, developing high-performance thin films remains a challenge. Here, we propose a new material design route to achieve high permittivity behavior in atomically thin films. We present a concrete example of Dion–Jacobson-type KSr2-xBixNb3O10 and its cation-exchanged form HSr2-xBixNb3O10, which exhibits a stable colossal permittivity and low dielectric loss. In addition, Sr2(1−x)Bi2xNb3O10-δ nanosheets were obtained by chemical exfoliation, with a high dielectric permittivity of over 500—the highest among all known dielectrics in ultrathin films (<20 nm). The Bi substitution of Sr2Nb3O10 led to a two-fold increase in the dielectric permittivity owing to the higher polarizability of Bi ions. Our proposed method provides a strategy for obtaining new high-k nanoscale dielectrics for use in nanoscaled electronics.

Original languageEnglish
Article number166606
JournalJournal of Alloys and Compounds
Publication statusPublished - 2022 Dec 5

Bibliographical note

Funding Information:
This research was supported by the Korea Institute of Science and Technology Future Resource Program ( 2E31771 ) & the National Research Foundation of Korea (NRF) grant funded by the Korea government (No. 2021R1A2C2010695 & 2020R1A6A3A01098488 ).

Publisher Copyright:
© 2022

All Science Journal Classification (ASJC) codes

  • Mechanics of Materials
  • Mechanical Engineering
  • Metals and Alloys
  • Materials Chemistry


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