Metastable pseudomorphic Ge0.08Si0.92 layers grown by chemical-vapor deposition on Si(100) substrate were implanted at room temperature with 90 keV As ions to a dose of 1×1013 cm-2. The samples were subsequently annealed for short 40 s durations in a lamp furnace with a nitrogen ambient, or for long 30 min periods in a vacuum tube furnace. For samples annealed for a 30-min-long duration at 700°C, the dopant activation can only reach 50% without introducing significant strain relaxation, whereas samples annealed for short 40 s periods (at 850°C) can achieve more than 90% activation without a loss of strain. We conclude that it is advantageous to anneal a low-dose As-implanted pseudomorphic and metastable GeSi epilayers briefly at an elevated temperature, rather than to anneal it for a 30-min-long period at a lesser temperature, when high activation without a strain loss is desired.
|Number of pages||3|
|Journal||Journal of Applied Physics|
|Publication status||Published - 1996 May 1|
All Science Journal Classification (ASJC) codes
- Physics and Astronomy(all)