Advantageous reverse recovery behavior of pentacene/ZnO diode

Kwang H. Lee, Aaron Park, Seongil Im, Yerok Park, Su H. Kim, Myung M. Sung, Seungjun Lee

Research output: Contribution to journalArticle

4 Citations (Scopus)

Abstract

We report on the ac and reverse recovery behavior of organic pentacene/ZnO thin-film diodes fabricated on plastic substrate. The 50 nm thin pentacene was evaporated on 60 nm thin ZnO that was deposited by atomic layer deposition at 100°C. Our thin-film diode showed a much faster reverse recovery (∼70 ns) compared to that (∼5 μs) of the Si control diode, although it also reveals a lower forward current of ∼3 mA at 2.5 V than that of the Si control (10 mA at 0.6 V). It is because our thin-film diode has little influence of the minority carrier unlike the Si control diode. We thus conclude that the pentacene/ZnO thin-film diode is promising as a fast switching device.

Original languageEnglish
Pages (from-to)H261-H263
JournalElectrochemical and Solid-State Letters
Volume13
Issue number8
DOIs
Publication statusPublished - 2010 Jun 21

Fingerprint

Diodes
recovery
diodes
Recovery
Thin films
thin films
Atomic layer deposition
atomic layer epitaxy
minority carriers
pentacene
plastics
Plastics
Substrates

All Science Journal Classification (ASJC) codes

  • Chemical Engineering(all)
  • Materials Science(all)
  • Physical and Theoretical Chemistry
  • Electrochemistry
  • Electrical and Electronic Engineering

Cite this

Lee, K. H., Park, A., Im, S., Park, Y., Kim, S. H., Sung, M. M., & Lee, S. (2010). Advantageous reverse recovery behavior of pentacene/ZnO diode. Electrochemical and Solid-State Letters, 13(8), H261-H263. https://doi.org/10.1149/1.3428743
Lee, Kwang H. ; Park, Aaron ; Im, Seongil ; Park, Yerok ; Kim, Su H. ; Sung, Myung M. ; Lee, Seungjun. / Advantageous reverse recovery behavior of pentacene/ZnO diode. In: Electrochemical and Solid-State Letters. 2010 ; Vol. 13, No. 8. pp. H261-H263.
@article{3e1deceb908d45f094525605b495bd98,
title = "Advantageous reverse recovery behavior of pentacene/ZnO diode",
abstract = "We report on the ac and reverse recovery behavior of organic pentacene/ZnO thin-film diodes fabricated on plastic substrate. The 50 nm thin pentacene was evaporated on 60 nm thin ZnO that was deposited by atomic layer deposition at 100°C. Our thin-film diode showed a much faster reverse recovery (∼70 ns) compared to that (∼5 μs) of the Si control diode, although it also reveals a lower forward current of ∼3 mA at 2.5 V than that of the Si control (10 mA at 0.6 V). It is because our thin-film diode has little influence of the minority carrier unlike the Si control diode. We thus conclude that the pentacene/ZnO thin-film diode is promising as a fast switching device.",
author = "Lee, {Kwang H.} and Aaron Park and Seongil Im and Yerok Park and Kim, {Su H.} and Sung, {Myung M.} and Seungjun Lee",
year = "2010",
month = "6",
day = "21",
doi = "10.1149/1.3428743",
language = "English",
volume = "13",
pages = "H261--H263",
journal = "Electrochemical and Solid-State Letters",
issn = "1099-0062",
publisher = "Electrochemical Society, Inc.",
number = "8",

}

Lee, KH, Park, A, Im, S, Park, Y, Kim, SH, Sung, MM & Lee, S 2010, 'Advantageous reverse recovery behavior of pentacene/ZnO diode', Electrochemical and Solid-State Letters, vol. 13, no. 8, pp. H261-H263. https://doi.org/10.1149/1.3428743

Advantageous reverse recovery behavior of pentacene/ZnO diode. / Lee, Kwang H.; Park, Aaron; Im, Seongil; Park, Yerok; Kim, Su H.; Sung, Myung M.; Lee, Seungjun.

In: Electrochemical and Solid-State Letters, Vol. 13, No. 8, 21.06.2010, p. H261-H263.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Advantageous reverse recovery behavior of pentacene/ZnO diode

AU - Lee, Kwang H.

AU - Park, Aaron

AU - Im, Seongil

AU - Park, Yerok

AU - Kim, Su H.

AU - Sung, Myung M.

AU - Lee, Seungjun

PY - 2010/6/21

Y1 - 2010/6/21

N2 - We report on the ac and reverse recovery behavior of organic pentacene/ZnO thin-film diodes fabricated on plastic substrate. The 50 nm thin pentacene was evaporated on 60 nm thin ZnO that was deposited by atomic layer deposition at 100°C. Our thin-film diode showed a much faster reverse recovery (∼70 ns) compared to that (∼5 μs) of the Si control diode, although it also reveals a lower forward current of ∼3 mA at 2.5 V than that of the Si control (10 mA at 0.6 V). It is because our thin-film diode has little influence of the minority carrier unlike the Si control diode. We thus conclude that the pentacene/ZnO thin-film diode is promising as a fast switching device.

AB - We report on the ac and reverse recovery behavior of organic pentacene/ZnO thin-film diodes fabricated on plastic substrate. The 50 nm thin pentacene was evaporated on 60 nm thin ZnO that was deposited by atomic layer deposition at 100°C. Our thin-film diode showed a much faster reverse recovery (∼70 ns) compared to that (∼5 μs) of the Si control diode, although it also reveals a lower forward current of ∼3 mA at 2.5 V than that of the Si control (10 mA at 0.6 V). It is because our thin-film diode has little influence of the minority carrier unlike the Si control diode. We thus conclude that the pentacene/ZnO thin-film diode is promising as a fast switching device.

UR - http://www.scopus.com/inward/record.url?scp=77953579958&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=77953579958&partnerID=8YFLogxK

U2 - 10.1149/1.3428743

DO - 10.1149/1.3428743

M3 - Article

AN - SCOPUS:77953579958

VL - 13

SP - H261-H263

JO - Electrochemical and Solid-State Letters

JF - Electrochemical and Solid-State Letters

SN - 1099-0062

IS - 8

ER -