Advantageous reverse recovery behavior of pentacene/ZnO diode

Kwang H. Lee, Aaron Park, Seongil Im, Yerok Park, Su H. Kim, Myung M. Sung, Seungjun Lee

Research output: Contribution to journalArticle

5 Citations (Scopus)

Abstract

We report on the ac and reverse recovery behavior of organic pentacene/ZnO thin-film diodes fabricated on plastic substrate. The 50 nm thin pentacene was evaporated on 60 nm thin ZnO that was deposited by atomic layer deposition at 100°C. Our thin-film diode showed a much faster reverse recovery (∼70 ns) compared to that (∼5 μs) of the Si control diode, although it also reveals a lower forward current of ∼3 mA at 2.5 V than that of the Si control (10 mA at 0.6 V). It is because our thin-film diode has little influence of the minority carrier unlike the Si control diode. We thus conclude that the pentacene/ZnO thin-film diode is promising as a fast switching device.

Original languageEnglish
Pages (from-to)H261-H263
JournalElectrochemical and Solid-State Letters
Volume13
Issue number8
DOIs
Publication statusPublished - 2010 Jun 21

All Science Journal Classification (ASJC) codes

  • Chemical Engineering(all)
  • Materials Science(all)
  • Physical and Theoretical Chemistry
  • Electrochemistry
  • Electrical and Electronic Engineering

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  • Cite this

    Lee, K. H., Park, A., Im, S., Park, Y., Kim, S. H., Sung, M. M., & Lee, S. (2010). Advantageous reverse recovery behavior of pentacene/ZnO diode. Electrochemical and Solid-State Letters, 13(8), H261-H263. https://doi.org/10.1149/1.3428743