We report on the tetracene-based photo-thin-film transistors (photo-TFTs) which adopt thin poly-4-vinylphenol (PVP)/aluminum oxide (Al Ox) bilayer for a gate dielectric and two different source/drain (SD) electrodes: semitransparent Ni Ox and Au. Our tetracene-based TFT with Ni Ox SD electrode exhibited quite good field effect mobility (μ=∼0.23 cm2 V s), high on/off current ratio (Ion Ioff) of ∼ 105, and good photo-to-dark current ratio (Iph Idark =∼ 104) under an ultraviolet (364 nm) illumination while that with Au SD electrodes showed much lower device performance (μ=∼0.08 cm2 V s, Ion Ioff =∼ 104, and Iph Idark =∼20), although the both TFTs operated at a low voltage of -8 V. With the hole-injection and light-reception advantages of Ni Ox electrode, our tetracene photo-TFT demonstrated good dynamic optical gating.
Bibliographical noteFunding Information:
This research was performed with the financial support from KOSEF (Program No. M1-0214-00-0228) and LG.Philips LCD (project year 2005). They also acknowledge the support from Brain Korea 21 Project and Seoul Science Fellowship.
All Science Journal Classification (ASJC) codes
- Physics and Astronomy(all)