AFM probe tips using heavily boron-doped silicon cantilevers realized in a <110> bulk silicon wafer

Il Joo Cho, Eun Chul Park, Euisik Yoon

Research output: Chapter in Book/Report/Conference proceedingConference contribution

5 Citations (Scopus)

Abstract

In this paper, we report a new method of fabricating AFM (Atomic Force Microscope) probe tips at low cost. Most of previous AFM probe tips have been made of SOI wafers using back-side anisotropic silicon etch [1]. Therefore, the wafer cost is high and the dimension control is poor because the tip length and thickness depend on wafer thickness variation and etch non-uniformity during the tip formation, respectively. In this paper we propose a new fabrication process in which probe tips are formed self-aligned to the p+ (heavily boron-doped) cantilevers from the front-side etch of a <110> bulk silicon wafer.

Original languageEnglish
Title of host publicationDigest of Papers - 2000 International Microprocesses and Nanotechnology Conference, MNC 2000
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages230-231
Number of pages2
ISBN (Electronic)4891140046, 9784891140045
DOIs
Publication statusPublished - 2000 Jan 1
EventInternational Microprocesses and Nanotechnology Conference, MNC 2000 - Tokyo, Japan
Duration: 2000 Jul 112000 Jul 13

Publication series

NameDigest of Papers - 2000 International Microprocesses and Nanotechnology Conference, MNC 2000

Other

OtherInternational Microprocesses and Nanotechnology Conference, MNC 2000
CountryJapan
CityTokyo
Period00/7/1100/7/13

Fingerprint

Boron
Silicon
Silicon wafers
Microscopes
Costs and Cost Analysis
Costs
Fabrication

All Science Journal Classification (ASJC) codes

  • Biotechnology
  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials

Cite this

Cho, I. J., Park, E. C., & Yoon, E. (2000). AFM probe tips using heavily boron-doped silicon cantilevers realized in a <110> bulk silicon wafer. In Digest of Papers - 2000 International Microprocesses and Nanotechnology Conference, MNC 2000 (pp. 230-231). [872729] (Digest of Papers - 2000 International Microprocesses and Nanotechnology Conference, MNC 2000). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/IMNC.2000.872729
Cho, Il Joo ; Park, Eun Chul ; Yoon, Euisik. / AFM probe tips using heavily boron-doped silicon cantilevers realized in a <110> bulk silicon wafer. Digest of Papers - 2000 International Microprocesses and Nanotechnology Conference, MNC 2000. Institute of Electrical and Electronics Engineers Inc., 2000. pp. 230-231 (Digest of Papers - 2000 International Microprocesses and Nanotechnology Conference, MNC 2000).
@inproceedings{11677552ae7942928b59faf3205c17e6,
title = "AFM probe tips using heavily boron-doped silicon cantilevers realized in a <110> bulk silicon wafer",
abstract = "In this paper, we report a new method of fabricating AFM (Atomic Force Microscope) probe tips at low cost. Most of previous AFM probe tips have been made of SOI wafers using back-side anisotropic silicon etch [1]. Therefore, the wafer cost is high and the dimension control is poor because the tip length and thickness depend on wafer thickness variation and etch non-uniformity during the tip formation, respectively. In this paper we propose a new fabrication process in which probe tips are formed self-aligned to the p+ (heavily boron-doped) cantilevers from the front-side etch of a <110> bulk silicon wafer.",
author = "Cho, {Il Joo} and Park, {Eun Chul} and Euisik Yoon",
year = "2000",
month = "1",
day = "1",
doi = "10.1109/IMNC.2000.872729",
language = "English",
series = "Digest of Papers - 2000 International Microprocesses and Nanotechnology Conference, MNC 2000",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
pages = "230--231",
booktitle = "Digest of Papers - 2000 International Microprocesses and Nanotechnology Conference, MNC 2000",
address = "United States",

}

Cho, IJ, Park, EC & Yoon, E 2000, AFM probe tips using heavily boron-doped silicon cantilevers realized in a <110> bulk silicon wafer. in Digest of Papers - 2000 International Microprocesses and Nanotechnology Conference, MNC 2000., 872729, Digest of Papers - 2000 International Microprocesses and Nanotechnology Conference, MNC 2000, Institute of Electrical and Electronics Engineers Inc., pp. 230-231, International Microprocesses and Nanotechnology Conference, MNC 2000, Tokyo, Japan, 00/7/11. https://doi.org/10.1109/IMNC.2000.872729

AFM probe tips using heavily boron-doped silicon cantilevers realized in a <110> bulk silicon wafer. / Cho, Il Joo; Park, Eun Chul; Yoon, Euisik.

Digest of Papers - 2000 International Microprocesses and Nanotechnology Conference, MNC 2000. Institute of Electrical and Electronics Engineers Inc., 2000. p. 230-231 872729 (Digest of Papers - 2000 International Microprocesses and Nanotechnology Conference, MNC 2000).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

TY - GEN

T1 - AFM probe tips using heavily boron-doped silicon cantilevers realized in a <110> bulk silicon wafer

AU - Cho, Il Joo

AU - Park, Eun Chul

AU - Yoon, Euisik

PY - 2000/1/1

Y1 - 2000/1/1

N2 - In this paper, we report a new method of fabricating AFM (Atomic Force Microscope) probe tips at low cost. Most of previous AFM probe tips have been made of SOI wafers using back-side anisotropic silicon etch [1]. Therefore, the wafer cost is high and the dimension control is poor because the tip length and thickness depend on wafer thickness variation and etch non-uniformity during the tip formation, respectively. In this paper we propose a new fabrication process in which probe tips are formed self-aligned to the p+ (heavily boron-doped) cantilevers from the front-side etch of a <110> bulk silicon wafer.

AB - In this paper, we report a new method of fabricating AFM (Atomic Force Microscope) probe tips at low cost. Most of previous AFM probe tips have been made of SOI wafers using back-side anisotropic silicon etch [1]. Therefore, the wafer cost is high and the dimension control is poor because the tip length and thickness depend on wafer thickness variation and etch non-uniformity during the tip formation, respectively. In this paper we propose a new fabrication process in which probe tips are formed self-aligned to the p+ (heavily boron-doped) cantilevers from the front-side etch of a <110> bulk silicon wafer.

UR - http://www.scopus.com/inward/record.url?scp=84951951200&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84951951200&partnerID=8YFLogxK

U2 - 10.1109/IMNC.2000.872729

DO - 10.1109/IMNC.2000.872729

M3 - Conference contribution

AN - SCOPUS:84951951200

T3 - Digest of Papers - 2000 International Microprocesses and Nanotechnology Conference, MNC 2000

SP - 230

EP - 231

BT - Digest of Papers - 2000 International Microprocesses and Nanotechnology Conference, MNC 2000

PB - Institute of Electrical and Electronics Engineers Inc.

ER -

Cho IJ, Park EC, Yoon E. AFM probe tips using heavily boron-doped silicon cantilevers realized in a <110> bulk silicon wafer. In Digest of Papers - 2000 International Microprocesses and Nanotechnology Conference, MNC 2000. Institute of Electrical and Electronics Engineers Inc. 2000. p. 230-231. 872729. (Digest of Papers - 2000 International Microprocesses and Nanotechnology Conference, MNC 2000). https://doi.org/10.1109/IMNC.2000.872729