Ag interlayered transparent conducting electrode for photovoltaic cells

Jeong Do Yang; Il Woo Ok; Jung Min Cho; Dong Hee Park; Won Suk Shin; Kyoung Gon Kim; Sang Jin Moon; Kyung-hwa Yoo; Won Kook Choi

doi:10.1143/JJAP.51.10NE07

Ag interlayered transparent conducting electrode for photovoltaic cells

Jeong Do Yang, Il Woo Ok, Jung Min Cho, Dong Hee Park, Won Suk Shin, Kyoung Gon Kim, Sang Jin Moon, Kyung-hwa Yoo, Won Kook Choi

Department of Physics

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4 Citations (Scopus)

Abstract

We fabricated the organic photovoltaic (OPV) cells on the transparent and low resistive multilayer electrode of a few nm Ag layer embedded Al doped zinc oxide film (AZO/Ag/AZO) on a glass. AZO and Ag consisting of the continuous multilayer were fabricated using rf magnetron at room temperature successively. AZO (45 nm)/Ag (11 nm)/AZO (45 nm) electrode shows an electrical resistivity of 6:56 × 10 ^-5 ωcm, optical transmittance of 89.3% at 550nm and figure of merit (FOM) value of 4:94 × 10 ^-2 ω ^-1. An inverted structure OPV was fabricated on AZO/Ag/AZO transparent electrode in which TiOx and PEDOT:PSS were used as an electron transport and hole transport layer respectively. The OPVs showed power conversion efficiency and fill factor as high as 2.07%, 0.51 respectively.

Original language	English
Article number	10NE07
Journal	Japanese Journal of Applied Physics
Volume	51
Issue number	10 PART 2
DOIs	https://doi.org/10.1143/JJAP.51.10NE07
Publication status	Published - 2012 Oct 1

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All Science Journal Classification (ASJC) codes

Engineering(all)
Physics and Astronomy(all)

Cite this

Yang, J. D., Ok, I. W., Cho, J. M., Park, D. H., Shin, W. S., Kim, K. G., Moon, S. J., Yoo, K., & Choi, W. K. (2012). Ag interlayered transparent conducting electrode for photovoltaic cells. Japanese Journal of Applied Physics, 51(10 PART 2), [10NE07]. https://doi.org/10.1143/JJAP.51.10NE07

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title = "Ag interlayered transparent conducting electrode for photovoltaic cells",

abstract = "We fabricated the organic photovoltaic (OPV) cells on the transparent and low resistive multilayer electrode of a few nm Ag layer embedded Al doped zinc oxide film (AZO/Ag/AZO) on a glass. AZO and Ag consisting of the continuous multilayer were fabricated using rf magnetron at room temperature successively. AZO (45 nm)/Ag (11 nm)/AZO (45 nm) electrode shows an electrical resistivity of 6:56 × 10 -5 ωcm, optical transmittance of 89.3% at 550nm and figure of merit (FOM) value of 4:94 × 10 -2 ω -1. An inverted structure OPV was fabricated on AZO/Ag/AZO transparent electrode in which TiOx and PEDOT:PSS were used as an electron transport and hole transport layer respectively. The OPVs showed power conversion efficiency and fill factor as high as 2.07%, 0.51 respectively.",

author = "Yang, {Jeong Do} and Ok, {Il Woo} and Cho, {Jung Min} and Park, {Dong Hee} and Shin, {Won Suk} and Kim, {Kyoung Gon} and Moon, {Sang Jin} and Kyung-hwa Yoo and Choi, {Won Kook}",

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T1 - Ag interlayered transparent conducting electrode for photovoltaic cells

AU - Yang, Jeong Do

AU - Ok, Il Woo

AU - Cho, Jung Min

AU - Park, Dong Hee

AU - Shin, Won Suk

AU - Kim, Kyoung Gon

AU - Moon, Sang Jin

AU - Yoo, Kyung-hwa

AU - Choi, Won Kook

PY - 2012/10/1

Y1 - 2012/10/1

N2 - We fabricated the organic photovoltaic (OPV) cells on the transparent and low resistive multilayer electrode of a few nm Ag layer embedded Al doped zinc oxide film (AZO/Ag/AZO) on a glass. AZO and Ag consisting of the continuous multilayer were fabricated using rf magnetron at room temperature successively. AZO (45 nm)/Ag (11 nm)/AZO (45 nm) electrode shows an electrical resistivity of 6:56 × 10 -5 ωcm, optical transmittance of 89.3% at 550nm and figure of merit (FOM) value of 4:94 × 10 -2 ω -1. An inverted structure OPV was fabricated on AZO/Ag/AZO transparent electrode in which TiOx and PEDOT:PSS were used as an electron transport and hole transport layer respectively. The OPVs showed power conversion efficiency and fill factor as high as 2.07%, 0.51 respectively.

AB - We fabricated the organic photovoltaic (OPV) cells on the transparent and low resistive multilayer electrode of a few nm Ag layer embedded Al doped zinc oxide film (AZO/Ag/AZO) on a glass. AZO and Ag consisting of the continuous multilayer were fabricated using rf magnetron at room temperature successively. AZO (45 nm)/Ag (11 nm)/AZO (45 nm) electrode shows an electrical resistivity of 6:56 × 10 -5 ωcm, optical transmittance of 89.3% at 550nm and figure of merit (FOM) value of 4:94 × 10 -2 ω -1. An inverted structure OPV was fabricated on AZO/Ag/AZO transparent electrode in which TiOx and PEDOT:PSS were used as an electron transport and hole transport layer respectively. The OPVs showed power conversion efficiency and fill factor as high as 2.07%, 0.51 respectively.

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10.1143/JJAP.51.10NE07