Agglomeration of cylindrically condensed cores in Si1-x Ge x nanowires by oxidation

Sang Yeon Kim, Hoo Jeong Lee, Dae Hong Ko

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Abstract

Oxidation of Si1-x Gex (x=0.15, 0.3) nanowires was performed to examine the Ge condensation and agglomeration behaviors of the remaining Si1-y Gey (y>x) cores. Si1-x Gex nanowires were grown in a furnace and thermally oxidized. Test results were investigated using transmission electron microscopy analysis. With the increase in oxidation time, Ge condensation occurred, after which Si 1-y Gey cores changed to sphere shapes. The formation of spheres was related to the reduction in the total interfacial energy between the Si1-y Gey core and the outer SiO2 layer.

Original languageEnglish
JournalElectrochemical and Solid-State Letters
Volume13
Issue number6
DOIs
Publication statusPublished - 2010 Apr 27

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All Science Journal Classification (ASJC) codes

  • Electrochemistry
  • Electrical and Electronic Engineering
  • Materials Science(all)
  • Chemical Engineering(all)
  • Physical and Theoretical Chemistry

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