Agglomeration of cylindrically condensed cores in Si1-x Ge x nanowires by oxidation

Sang Yeon Kim; Hoo Jeong Lee; Dae Hong Ko

doi:10.1149/1.3367625

Agglomeration of cylindrically condensed cores in Si_1-x Ge _x nanowires by oxidation

Sang Yeon Kim, Hoo Jeong Lee, Dae Hong Ko

Department of Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

1 Citation (Scopus)

Abstract

Oxidation of Si_1-x Ge_x (x=0.15, 0.3) nanowires was performed to examine the Ge condensation and agglomeration behaviors of the remaining Si_1-y Ge_y (y>x) cores. Si_1-x Ge_x nanowires were grown in a furnace and thermally oxidized. Test results were investigated using transmission electron microscopy analysis. With the increase in oxidation time, Ge condensation occurred, after which Si _1-y Ge_y cores changed to sphere shapes. The formation of spheres was related to the reduction in the total interfacial energy between the Si_1-y Ge_y core and the outer SiO₂ layer.

Original language	English
Pages (from-to)	K57-K59
Journal	Electrochemical and Solid-State Letters
Volume	13
Issue number	6
DOIs	https://doi.org/10.1149/1.3367625
Publication status	Published - 2010

All Science Journal Classification (ASJC) codes

Chemical Engineering(all)
Materials Science(all)
Physical and Theoretical Chemistry
Electrochemistry
Electrical and Electronic Engineering

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abstract = "Oxidation of Si1-x Gex (x=0.15, 0.3) nanowires was performed to examine the Ge condensation and agglomeration behaviors of the remaining Si1-y Gey (y>x) cores. Si1-x Gex nanowires were grown in a furnace and thermally oxidized. Test results were investigated using transmission electron microscopy analysis. With the increase in oxidation time, Ge condensation occurred, after which Si 1-y Gey cores changed to sphere shapes. The formation of spheres was related to the reduction in the total interfacial energy between the Si1-y Gey core and the outer SiO2 layer.",

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AU - Kim, Sang Yeon

AU - Lee, Hoo Jeong

AU - Ko, Dae Hong

PY - 2010

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N2 - Oxidation of Si1-x Gex (x=0.15, 0.3) nanowires was performed to examine the Ge condensation and agglomeration behaviors of the remaining Si1-y Gey (y>x) cores. Si1-x Gex nanowires were grown in a furnace and thermally oxidized. Test results were investigated using transmission electron microscopy analysis. With the increase in oxidation time, Ge condensation occurred, after which Si 1-y Gey cores changed to sphere shapes. The formation of spheres was related to the reduction in the total interfacial energy between the Si1-y Gey core and the outer SiO2 layer.

AB - Oxidation of Si1-x Gex (x=0.15, 0.3) nanowires was performed to examine the Ge condensation and agglomeration behaviors of the remaining Si1-y Gey (y>x) cores. Si1-x Gex nanowires were grown in a furnace and thermally oxidized. Test results were investigated using transmission electron microscopy analysis. With the increase in oxidation time, Ge condensation occurred, after which Si 1-y Gey cores changed to sphere shapes. The formation of spheres was related to the reduction in the total interfacial energy between the Si1-y Gey core and the outer SiO2 layer.

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