Abstract
Oxidation of Si1-x Gex (x=0.15, 0.3) nanowires was performed to examine the Ge condensation and agglomeration behaviors of the remaining Si1-y Gey (y>x) cores. Si1-x Gex nanowires were grown in a furnace and thermally oxidized. Test results were investigated using transmission electron microscopy analysis. With the increase in oxidation time, Ge condensation occurred, after which Si 1-y Gey cores changed to sphere shapes. The formation of spheres was related to the reduction in the total interfacial energy between the Si1-y Gey core and the outer SiO2 layer.
Original language | English |
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Pages (from-to) | K57-K59 |
Journal | Electrochemical and Solid-State Letters |
Volume | 13 |
Issue number | 6 |
DOIs | |
Publication status | Published - 2010 |
All Science Journal Classification (ASJC) codes
- Chemical Engineering(all)
- Materials Science(all)
- Physical and Theoretical Chemistry
- Electrochemistry
- Electrical and Electronic Engineering