An Al 2O 3 antireflection layer was placed between a glass substrate and a transparent conducting oxide layer in order to decrease optical reflection in microcrystalline silicon (μc-Si:H) p-i-n solar cells. Optical simulations showed that reflections were decreased by Al 2O 3 thin films, these reflections were found to be at a minimum when a 40 nm thick Al 2O 3 layer was used. Experimental results demonstrated that the measured reflectance of μc-Si:H solar cells was decreased by employing the proposed 40 nm Al 2O 3 in all wavelength regions and the quantum efficiency was also increased. The short-circuit current was increased from 22.7 to 23.5 mA/cm 2 without sacrificing open circuit voltage or fill factor. The average efficiency of devices was improved from 6.02% to 6.32% by introducing 40 nm Al 2O 3 antireflection layer.
Bibliographical noteFunding Information:
This work was supported by the Global Leading Technology Program (no. 2011T100100039 ) of the Office of Strategic R&D Planning (OSP) funded by the Ministry of Knowledge Economy, Republic of Korea.
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Renewable Energy, Sustainability and the Environment
- Surfaces, Coatings and Films