Al 2O 3 antireflection layer between glass and transparent conducting oxide for enhanced light trapping in microcrystalline silicon thin film solar cells

Dong Won Kang, Jang Yeon Kwon, Jenny Shim, Heon Min Lee, Min Koo Han

Research output: Contribution to journalArticle

18 Citations (Scopus)

Abstract

An Al 2O 3 antireflection layer was placed between a glass substrate and a transparent conducting oxide layer in order to decrease optical reflection in microcrystalline silicon (μc-Si:H) p-i-n solar cells. Optical simulations showed that reflections were decreased by Al 2O 3 thin films, these reflections were found to be at a minimum when a 40 nm thick Al 2O 3 layer was used. Experimental results demonstrated that the measured reflectance of μc-Si:H solar cells was decreased by employing the proposed 40 nm Al 2O 3 in all wavelength regions and the quantum efficiency was also increased. The short-circuit current was increased from 22.7 to 23.5 mA/cm 2 without sacrificing open circuit voltage or fill factor. The average efficiency of devices was improved from 6.02% to 6.32% by introducing 40 nm Al 2O 3 antireflection layer.

Original languageEnglish
Pages (from-to)22-25
Number of pages4
JournalSolar Energy Materials and Solar Cells
Volume101
DOIs
Publication statusPublished - 2012 Jun 1

Fingerprint

Microcrystalline silicon
Silicon solar cells
Oxides
Glass
Solar cells
Open circuit voltage
Quantum efficiency
Short circuit currents
Thin films
Wavelength
Thin film solar cells
Substrates

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Renewable Energy, Sustainability and the Environment
  • Surfaces, Coatings and Films

Cite this

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abstract = "An Al 2O 3 antireflection layer was placed between a glass substrate and a transparent conducting oxide layer in order to decrease optical reflection in microcrystalline silicon (μc-Si:H) p-i-n solar cells. Optical simulations showed that reflections were decreased by Al 2O 3 thin films, these reflections were found to be at a minimum when a 40 nm thick Al 2O 3 layer was used. Experimental results demonstrated that the measured reflectance of μc-Si:H solar cells was decreased by employing the proposed 40 nm Al 2O 3 in all wavelength regions and the quantum efficiency was also increased. The short-circuit current was increased from 22.7 to 23.5 mA/cm 2 without sacrificing open circuit voltage or fill factor. The average efficiency of devices was improved from 6.02{\%} to 6.32{\%} by introducing 40 nm Al 2O 3 antireflection layer.",
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Al 2O 3 antireflection layer between glass and transparent conducting oxide for enhanced light trapping in microcrystalline silicon thin film solar cells. / Kang, Dong Won; Kwon, Jang Yeon; Shim, Jenny; Lee, Heon Min; Han, Min Koo.

In: Solar Energy Materials and Solar Cells, Vol. 101, 01.06.2012, p. 22-25.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Al 2O 3 antireflection layer between glass and transparent conducting oxide for enhanced light trapping in microcrystalline silicon thin film solar cells

AU - Kang, Dong Won

AU - Kwon, Jang Yeon

AU - Shim, Jenny

AU - Lee, Heon Min

AU - Han, Min Koo

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