AlGaN/GaN-on-Si power FET with Mo/Au gate

Hyun Seop Kim, Won Ho Jang, Sang Woo Han, Hyungtak Kim, Chun Hyung Cho, Jungwoo Oh, Ho Young Cha

Research output: Contribution to journalArticlepeer-review


We have investigated a Mo/Au gate scheme for use in AlGaN/GaN-on-Si HFETs. AlGaN/GaN-on-Si HFETs were fabricated with Ni/Au or Mo/Au gates and their electrical characteristics were compared after thermal stress tests. While insignificant difference was observed in DC characteristics, the Mo/Au gate device exhibited lower on-resistance with superior pulsed characteristics in comparison with the Ni/Au gate device.

Original languageEnglish
Pages (from-to)204-209
Number of pages6
JournalJournal of Semiconductor Technology and Science
Issue number2
Publication statusPublished - 2017 Apr

Bibliographical note

Funding Information:
This work was supported by Basic Science Research Program (No. 2015R1A6A1A03031833) and grants (2012M3A7B4035274, 2016R1D1A1B03935445) through the National Research Foundation of Korea (NRF).

Publisher Copyright:
© 2017, Institute of Electronics Engineers of Korea. All rights reserved.

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering


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