AlGaN/GaN-on-Si power FET with Mo/Au gate

Hyun Seop Kim, Won Ho Jang, Sang Woo Han, Hyungtak Kim, Chun Hyung Cho, Jungwoo Oh, Ho Young Cha

Research output: Contribution to journalArticle

Abstract

We have investigated a Mo/Au gate scheme for use in AlGaN/GaN-on-Si HFETs. AlGaN/GaN-on-Si HFETs were fabricated with Ni/Au or Mo/Au gates and their electrical characteristics were compared after thermal stress tests. While insignificant difference was observed in DC characteristics, the Mo/Au gate device exhibited lower on-resistance with superior pulsed characteristics in comparison with the Ni/Au gate device.

Original languageEnglish
Pages (from-to)204-209
Number of pages6
JournalJournal of Semiconductor Technology and Science
Volume17
Issue number2
DOIs
Publication statusPublished - 2017 Apr

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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    Kim, H. S., Jang, W. H., Han, S. W., Kim, H., Cho, C. H., Oh, J., & Cha, H. Y. (2017). AlGaN/GaN-on-Si power FET with Mo/Au gate. Journal of Semiconductor Technology and Science, 17(2), 204-209. https://doi.org/10.5573/JSTS.2017.17.2.204