We have investigated a Mo/Au gate scheme for use in AlGaN/GaN-on-Si HFETs. AlGaN/GaN-on-Si HFETs were fabricated with Ni/Au or Mo/Au gates and their electrical characteristics were compared after thermal stress tests. While insignificant difference was observed in DC characteristics, the Mo/Au gate device exhibited lower on-resistance with superior pulsed characteristics in comparison with the Ni/Au gate device.
Bibliographical noteFunding Information:
This work was supported by Basic Science Research Program (No. 2015R1A6A1A03031833) and grants (2012M3A7B4035274, 2016R1D1A1B03935445) through the National Research Foundation of Korea (NRF).
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All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering