Aligning capabilities of a nematic liquid crystal on treated SiO _x thin-film layers by electron beam evaporation

We studied liquid crystal (LC) aligning capabilities on a treated SiO _x thin-film surface by 45° evaporation with an electron beam system. A uniform vertical LC alignment on SiO_x thin-film surfaces was achieved. A high pretilt angle of about 86.5° was obtained. A good LC alignment on treated SiO_x thin-film layers by 45° evaporation with electron beam was also observed at an annealing temperature of 250°C. The high pretilt angle and the good thermal stability of LC alignment on SiO_x thin-films by 45° obliqued electron beam evaporation can be achieved.