Aligning capabilities of a nematic liquid crystal on treated SiO x thin-film layers by electron beam evaporation

Hyung Ku Kang, Jin Woo Han, Soo Hee Kang, Jong Hwan Kim, Young Hwan Kim, Jeoung Yeon Hwang, Dae-Shik Seo

Research output: Contribution to journalArticle

5 Citations (Scopus)

Abstract

We studied liquid crystal (LC) aligning capabilities on a treated SiO x thin-film surface by 45° evaporation with an electron beam system. A uniform vertical LC alignment on SiOx thin-film surfaces was achieved. A high pretilt angle of about 86.5° was obtained. A good LC alignment on treated SiOx thin-film layers by 45° evaporation with electron beam was also observed at an annealing temperature of 250°C. The high pretilt angle and the good thermal stability of LC alignment on SiOx thin-films by 45° obliqued electron beam evaporation can be achieved.

Original languageEnglish
Pages (from-to)7050-7052
Number of pages3
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume45
Issue number9 A
DOIs
Publication statusPublished - 2006 Sep 7

Fingerprint

Nematic liquid crystals
Liquid crystals
Electron beams
Evaporation
liquid crystals
evaporation
electron beams
Thin films
alignment
thin films
Thermodynamic stability
thermal stability
Annealing
annealing
Temperature
temperature

All Science Journal Classification (ASJC) codes

  • Engineering(all)
  • Physics and Astronomy(all)

Cite this

Kang, Hyung Ku ; Han, Jin Woo ; Kang, Soo Hee ; Kim, Jong Hwan ; Kim, Young Hwan ; Hwang, Jeoung Yeon ; Seo, Dae-Shik. / Aligning capabilities of a nematic liquid crystal on treated SiO x thin-film layers by electron beam evaporation. In: Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers. 2006 ; Vol. 45, No. 9 A. pp. 7050-7052.
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abstract = "We studied liquid crystal (LC) aligning capabilities on a treated SiO x thin-film surface by 45° evaporation with an electron beam system. A uniform vertical LC alignment on SiOx thin-film surfaces was achieved. A high pretilt angle of about 86.5° was obtained. A good LC alignment on treated SiOx thin-film layers by 45° evaporation with electron beam was also observed at an annealing temperature of 250°C. The high pretilt angle and the good thermal stability of LC alignment on SiOx thin-films by 45° obliqued electron beam evaporation can be achieved.",
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Aligning capabilities of a nematic liquid crystal on treated SiO x thin-film layers by electron beam evaporation. / Kang, Hyung Ku; Han, Jin Woo; Kang, Soo Hee; Kim, Jong Hwan; Kim, Young Hwan; Hwang, Jeoung Yeon; Seo, Dae-Shik.

In: Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, Vol. 45, No. 9 A, 07.09.2006, p. 7050-7052.

Research output: Contribution to journalArticle

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AU - Kang, Hyung Ku

AU - Han, Jin Woo

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AU - Kim, Young Hwan

AU - Hwang, Jeoung Yeon

AU - Seo, Dae-Shik

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AB - We studied liquid crystal (LC) aligning capabilities on a treated SiO x thin-film surface by 45° evaporation with an electron beam system. A uniform vertical LC alignment on SiOx thin-film surfaces was achieved. A high pretilt angle of about 86.5° was obtained. A good LC alignment on treated SiOx thin-film layers by 45° evaporation with electron beam was also observed at an annealing temperature of 250°C. The high pretilt angle and the good thermal stability of LC alignment on SiOx thin-films by 45° obliqued electron beam evaporation can be achieved.

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