We studied liquid crystal (LC) aligning capabilities on a treated SiO x thin-film surface by 45° evaporation with an electron beam system. A uniform vertical LC alignment on SiOx thin-film surfaces was achieved. A high pretilt angle of about 86.5° was obtained. A good LC alignment on treated SiOx thin-film layers by 45° evaporation with electron beam was also observed at an annealing temperature of 250°C. The high pretilt angle and the good thermal stability of LC alignment on SiOx thin-films by 45° obliqued electron beam evaporation can be achieved.
|Number of pages||3|
|Journal||Japanese Journal of Applied Physics|
|Issue number||9 A|
|Publication status||Published - 2006 Sept 7|
All Science Journal Classification (ASJC) codes
- Physics and Astronomy(all)