Abstract
We study the alignment properties of liquid crystals (LCs) with a negative dielectric anisotropy on a hydrogenated silicon carbide (SiC:H) film, which is an alternative alignment material. SiC:H layers align LC molecules with a negative dielectric anisotropy via ion beam (IB) irradiation and control the pretilt angle in a range from 90 to 75° depending on the change of IB irradiation angle. Also, when they are exposed to high temperatures for a long time, they show robust properties without degradation. We conclude that although the SiC:H alignment layers are not sensitive to IB irradiation compared with the SiC layers, they show a potential as alternative LC alignment layers for IB irradiation method.
Original language | English |
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Pages (from-to) | 4617-4619 |
Number of pages | 3 |
Journal | Japanese journal of applied physics |
Volume | 47 |
Issue number | 6 PART 1 |
DOIs | |
Publication status | Published - 2008 Jun 13 |
All Science Journal Classification (ASJC) codes
- Engineering(all)
- Physics and Astronomy(all)