Abstract
We study the alignment properties of liquid crystals (LCs) with a negative dielectric anisotropy on a hydrogenated silicon carbide (SiC:H) film, which is an alternative alignment material. SiC:H layers align LC molecules with a negative dielectric anisotropy via ion beam (IB) irradiation and control the pretilt angle in a range from 90 to 75° depending on the change of IB irradiation angle. Also, when they are exposed to high temperatures for a long time, they show robust properties without degradation. We conclude that although the SiC:H alignment layers are not sensitive to IB irradiation compared with the SiC layers, they show a potential as alternative LC alignment layers for IB irradiation method.
| Original language | English |
|---|---|
| Pages (from-to) | 4617-4619 |
| Number of pages | 3 |
| Journal | Japanese journal of applied physics |
| Volume | 47 |
| Issue number | 6 PART 1 |
| DOIs | |
| Publication status | Published - 2008 Jun 13 |
All Science Journal Classification (ASJC) codes
- Engineering(all)
- Physics and Astronomy(all)
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Koo, W. H., Kim, J. B., Hwang, B. H., Kim, J. T., Jo, S. J., Kim, C. S., Lee, S. J., & Baik, H. K. (2008). Alignment properties of liquid crystal molecules with negative dielectric anisotropy on hydrogenated silicon carbide films. Japanese journal of applied physics, 47(6 PART 1), 4617-4619. https://doi.org/10.1143/JJAP.47.4617