Abstract
We study the alignment properties of liquid crystals (LCs) with a negative dielectric anisotropy on a hydrogenated silicon carbide (SiC:H) film, which is an alternative alignment material. SiC:H layers align LC molecules with a negative dielectric anisotropy via ion beam (IB) irradiation and control the pretilt angle in a range from 90 to 75° depending on the change of IB irradiation angle. Also, when they are exposed to high temperatures for a long time, they show robust properties without degradation. We conclude that although the SiC:H alignment layers are not sensitive to IB irradiation compared with the SiC layers, they show a potential as alternative LC alignment layers for IB irradiation method.
| Original language | English |
|---|---|
| Pages (from-to) | 4617-4619 |
| Number of pages | 3 |
| Journal | Japanese journal of applied physics |
| Volume | 47 |
| Issue number | 6 PART 1 |
| DOIs | |
| Publication status | Published - 2008 Jun 13 |
Fingerprint
All Science Journal Classification (ASJC) codes
- Engineering(all)
- Physics and Astronomy(all)
Cite this
}
Alignment properties of liquid crystal molecules with negative dielectric anisotropy on hydrogenated silicon carbide films. / Koo, Won Hoe; Kim, Jong Bok; Hwang, Byoung Har; Kim, Jong Tae; Jo, Sung Jin; Kim, Chang Su; Lee, Se Jong; Baik, Hong Koo.
In: Japanese journal of applied physics, Vol. 47, No. 6 PART 1, 13.06.2008, p. 4617-4619.Research output: Contribution to journal › Article
TY - JOUR
T1 - Alignment properties of liquid crystal molecules with negative dielectric anisotropy on hydrogenated silicon carbide films
AU - Koo, Won Hoe
AU - Kim, Jong Bok
AU - Hwang, Byoung Har
AU - Kim, Jong Tae
AU - Jo, Sung Jin
AU - Kim, Chang Su
AU - Lee, Se Jong
AU - Baik, Hong Koo
PY - 2008/6/13
Y1 - 2008/6/13
N2 - We study the alignment properties of liquid crystals (LCs) with a negative dielectric anisotropy on a hydrogenated silicon carbide (SiC:H) film, which is an alternative alignment material. SiC:H layers align LC molecules with a negative dielectric anisotropy via ion beam (IB) irradiation and control the pretilt angle in a range from 90 to 75° depending on the change of IB irradiation angle. Also, when they are exposed to high temperatures for a long time, they show robust properties without degradation. We conclude that although the SiC:H alignment layers are not sensitive to IB irradiation compared with the SiC layers, they show a potential as alternative LC alignment layers for IB irradiation method.
AB - We study the alignment properties of liquid crystals (LCs) with a negative dielectric anisotropy on a hydrogenated silicon carbide (SiC:H) film, which is an alternative alignment material. SiC:H layers align LC molecules with a negative dielectric anisotropy via ion beam (IB) irradiation and control the pretilt angle in a range from 90 to 75° depending on the change of IB irradiation angle. Also, when they are exposed to high temperatures for a long time, they show robust properties without degradation. We conclude that although the SiC:H alignment layers are not sensitive to IB irradiation compared with the SiC layers, they show a potential as alternative LC alignment layers for IB irradiation method.
UR - http://www.scopus.com/inward/record.url?scp=55049098302&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=55049098302&partnerID=8YFLogxK
U2 - 10.1143/JJAP.47.4617
DO - 10.1143/JJAP.47.4617
M3 - Article
AN - SCOPUS:55049098302
VL - 47
SP - 4617
EP - 4619
JO - Japanese Journal of Applied Physics
JF - Japanese Journal of Applied Physics
SN - 0021-4922
IS - 6 PART 1
ER -