Alkali earth metal dopants for high performance and aqueous-derived ZnO TFT

Si Yun Park, Kyongjun Kim, Keon Hee Lim, Eungkyu Lee, Seonjo Kim, Hyungjun Kim, Youn Sang Kim

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3 Citations (Scopus)

Abstract

We introduce high performance, low-temperature (<300 °C), and aqueous precursor-derived ZnO thin film transistors (TFTs) with alkali earth metal doping. Ca-doped ZnO TFTs exhibited excellent electrical performance with a field effect mobility of 6 cm2 V-1 s-1 and an on/off current ratio of 107. The origin of the enhancement in electrical properties by alkali earth metal dopants in ZnO was also investigated.

Original languageEnglish
Pages (from-to)21339-21342
Number of pages4
JournalRSC Advances
Volume3
Issue number44
DOIs
Publication statusPublished - 2013 Jan 1

All Science Journal Classification (ASJC) codes

  • Chemistry(all)
  • Chemical Engineering(all)

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    Park, S. Y., Kim, K., Lim, K. H., Lee, E., Kim, S., Kim, H., & Kim, Y. S. (2013). Alkali earth metal dopants for high performance and aqueous-derived ZnO TFT. RSC Advances, 3(44), 21339-21342. https://doi.org/10.1039/c3ra42784f