Two-dimensional (2D) semiconductors, such as transition metal dichalcogenides (TMDs) and black phosphorus, are the most promising channel materials for future electronics because of their unique electrical properties. Even though a number of 2D-materials-based logic devices have been demonstrated to date, most of them are a combination of more than two unit devices. If logic devices can be realized in a single channel, it would be advantageous for higher integration and functionality. In this study we report high-performance van der Waals heterostructure (vdW) ReS2 transistors with graphene electrodes on atomically flat hBN, and demonstrate a NAND gate comprising a single ReS2 transistor with split gates. Highly sensitive electrostatic doping of ReS2 enables fabrication of gate-tunable NAND logic gates, which cannot be achieved in bulk semiconductor materials because of the absence of gate tunability. The vdW heterostructure NAND gate comprising a single transistor paves a novel way to realize “all-2D” circuitry for flexible and transparent electronic applications.
Bibliographical noteFunding Information:
This study was supported by the National Research Foundation of Korea Grant funded by the Korean Government (2017R1A5A1014862 and 2018M3D1A1058793) and Basic Science Research Program through the National Research Foundation of Korea(NRF) funded by the Ministry of Science, ICT & Future Planning (NRF-2017R1A2B2006568). C.-H.L. acknowledges the support from the KU-KIST School Project.
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