All graphene-based thin film transistors on flexible plastic substrates

Seoung Ki Lee, Ho Young Jang, Sukjae Jang, Euiyoung Choi, Byung Hee Hong, Jaichan Lee, Sungho Park, Jong Hyun Ahn

Research output: Contribution to journalArticle

182 Citations (Scopus)

Abstract

High-performance, flexible all graphene-based thin film transistor (TFT) was fabricated on plastic substrates using a graphene active layer, graphene oxide (GO) dielectrics, and graphene electrodes. The GO dielectrics exhibit a dielectric constant (3.1 at 77 K), low leakage current (17 mA/cm 2), breakdown bias (1.5 × 10 6 V/cm), and good mechanical flexibility. Graphene-based TFTs showed a hole and electron mobility of 300 and 250 cm 2/(V·s), respectively, at a drain bias of -0.1 V. Moreover, graphene TFTs on the plastic substrates exhibited remarkably good mechanical flexibility and optical transmittance. This method explores a significant step for the application of graphene toward flexible and stretchable electronics.

Original languageEnglish
Pages (from-to)3472-3476
Number of pages5
JournalNano letters
Volume12
Issue number7
DOIs
Publication statusPublished - 2012 Jul 11

All Science Journal Classification (ASJC) codes

  • Bioengineering
  • Chemistry(all)
  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanical Engineering

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  • Cite this

    Lee, S. K., Jang, H. Y., Jang, S., Choi, E., Hong, B. H., Lee, J., Park, S., & Ahn, J. H. (2012). All graphene-based thin film transistors on flexible plastic substrates. Nano letters, 12(7), 3472-3476. https://doi.org/10.1021/nl300948c