All-perovskite transparent high mobility field effect using epitaxial BaSnO3 and LaInO3

Useong Kim, Chulkwon Park, Taewoo Ha, Young Mo Kim, Namwook Kim, Chanjong Ju, Jisung Park, Jaejun Yu, Jae Hoon Kim, Kookrin Char

Research output: Contribution to journalArticle

52 Citations (Scopus)

Abstract

We demonstrate an all-perovskite transparent heterojunction field effect transistor made of two lattice-matched perovskite oxides: BaSnO3 and LaInO3. We have developed epitaxial LaInO3 as the gate oxide on top of BaSnO3, which were recently reported to possess high thermal stability and electron mobility when doped with La. We measured the dielectric properties of the epitaxial LaInO3 films, such as the band gap, dielectric constant, and the dielectric breakdown field. Using the LaInO3 as a gate dielectric and the La-doped BaSnO3 as a channel layer, we fabricated field effect device structure. The field effect mobility of such device was higher than 90 cm2 V-1 s-1, the on/off ratio was larger than 107, and the subthreshold swing was 0.65 V dec-1. We discuss the possible origins for such device performance and the future directions for further improvement.

Original languageEnglish
Article number03610
JournalAPL Materials
Volume3
Issue number3
DOIs
Publication statusPublished - 2015 Mar 1

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Perovskite
Oxides
Electron mobility
Epitaxial films
Gate dielectrics
Field effect transistors
Electric breakdown
Dielectric properties
Heterojunctions
Energy gap
Thermodynamic stability
Permittivity
perovskite
Direction compound

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Engineering(all)

Cite this

Kim, U., Park, C., Ha, T., Kim, Y. M., Kim, N., Ju, C., ... Char, K. (2015). All-perovskite transparent high mobility field effect using epitaxial BaSnO3 and LaInO3. APL Materials, 3(3), [03610]. https://doi.org/10.1063/1.4913587
Kim, Useong ; Park, Chulkwon ; Ha, Taewoo ; Kim, Young Mo ; Kim, Namwook ; Ju, Chanjong ; Park, Jisung ; Yu, Jaejun ; Kim, Jae Hoon ; Char, Kookrin. / All-perovskite transparent high mobility field effect using epitaxial BaSnO3 and LaInO3. In: APL Materials. 2015 ; Vol. 3, No. 3.
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abstract = "We demonstrate an all-perovskite transparent heterojunction field effect transistor made of two lattice-matched perovskite oxides: BaSnO3 and LaInO3. We have developed epitaxial LaInO3 as the gate oxide on top of BaSnO3, which were recently reported to possess high thermal stability and electron mobility when doped with La. We measured the dielectric properties of the epitaxial LaInO3 films, such as the band gap, dielectric constant, and the dielectric breakdown field. Using the LaInO3 as a gate dielectric and the La-doped BaSnO3 as a channel layer, we fabricated field effect device structure. The field effect mobility of such device was higher than 90 cm2 V-1 s-1, the on/off ratio was larger than 107, and the subthreshold swing was 0.65 V dec-1. We discuss the possible origins for such device performance and the future directions for further improvement.",
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Kim, U, Park, C, Ha, T, Kim, YM, Kim, N, Ju, C, Park, J, Yu, J, Kim, JH & Char, K 2015, 'All-perovskite transparent high mobility field effect using epitaxial BaSnO3 and LaInO3', APL Materials, vol. 3, no. 3, 03610. https://doi.org/10.1063/1.4913587

All-perovskite transparent high mobility field effect using epitaxial BaSnO3 and LaInO3. / Kim, Useong; Park, Chulkwon; Ha, Taewoo; Kim, Young Mo; Kim, Namwook; Ju, Chanjong; Park, Jisung; Yu, Jaejun; Kim, Jae Hoon; Char, Kookrin.

In: APL Materials, Vol. 3, No. 3, 03610, 01.03.2015.

Research output: Contribution to journalArticle

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AU - Kim, Useong

AU - Park, Chulkwon

AU - Ha, Taewoo

AU - Kim, Young Mo

AU - Kim, Namwook

AU - Ju, Chanjong

AU - Park, Jisung

AU - Yu, Jaejun

AU - Kim, Jae Hoon

AU - Char, Kookrin

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AB - We demonstrate an all-perovskite transparent heterojunction field effect transistor made of two lattice-matched perovskite oxides: BaSnO3 and LaInO3. We have developed epitaxial LaInO3 as the gate oxide on top of BaSnO3, which were recently reported to possess high thermal stability and electron mobility when doped with La. We measured the dielectric properties of the epitaxial LaInO3 films, such as the band gap, dielectric constant, and the dielectric breakdown field. Using the LaInO3 as a gate dielectric and the La-doped BaSnO3 as a channel layer, we fabricated field effect device structure. The field effect mobility of such device was higher than 90 cm2 V-1 s-1, the on/off ratio was larger than 107, and the subthreshold swing was 0.65 V dec-1. We discuss the possible origins for such device performance and the future directions for further improvement.

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