All-solution-processed InGaO3(ZnO)m thin films with layered structure

Sung Woon Cho, Jun Hyeon Kim, Sangwoo Shin, Hyung Hee Cho, Hyung Koun Cho

Research output: Contribution to journalArticle

4 Citations (Scopus)

Abstract

We fabricated the crystallized InGaZnO thin films by sol-gel process and high-temperature annealing at 900°C. Prior to the deposition of the InGaZnO, ZnO buffer layers were also coated by sol-gel process, which was followed by thermal annealing. After the synthesis and annealing of the InGaZnO, the InGaZnO thin film on the ZnO buffer layer with preferred orientation showed periodic diffraction patterns in the X-ray diffraction, resulting in a superlattice structure. This film consisted of nanosized grains with two phases of InGaO 3(ZnO)1 and InGaO3(ZnO)2 in InGaZnO polycrystal. On the other hand, the use of no ZnO buffer layer and randomly oriented ZnO buffer induced the absence of the InGaZnO crystal related patterns. This indicated that the ZnO buffer with high c-axis preferred orientation reduced the critical temperature for the crystallization of the layered InGaZnO. The InGaZnO thin films formed with nanosized grains of two-phase InGaO 3(ZnO)m superlattice showed considerably low thermal conductivity (1.14 Wm-1 K-1 at 325 K) due to the phonon scattering from grain boundaries as well as interfaces in the superlattice grain.

Original languageEnglish
Article number909786
JournalJournal of Nanomaterials
Volume2013
DOIs
Publication statusPublished - 2013 Oct 31

Fingerprint

Buffer layers
Annealing
Thin films
Sol-gel process
Buffers
Phonon scattering
Polycrystals
Crystallization
Crystal orientation
Diffraction patterns
Thermal conductivity
Grain boundaries
X ray diffraction
Temperature
Crystals

All Science Journal Classification (ASJC) codes

  • Materials Science(all)

Cite this

Cho, Sung Woon ; Kim, Jun Hyeon ; Shin, Sangwoo ; Cho, Hyung Hee ; Cho, Hyung Koun. / All-solution-processed InGaO3(ZnO)m thin films with layered structure. In: Journal of Nanomaterials. 2013 ; Vol. 2013.
@article{0eaf9081c21d49c9b6734b14734f73b4,
title = "All-solution-processed InGaO3(ZnO)m thin films with layered structure",
abstract = "We fabricated the crystallized InGaZnO thin films by sol-gel process and high-temperature annealing at 900°C. Prior to the deposition of the InGaZnO, ZnO buffer layers were also coated by sol-gel process, which was followed by thermal annealing. After the synthesis and annealing of the InGaZnO, the InGaZnO thin film on the ZnO buffer layer with preferred orientation showed periodic diffraction patterns in the X-ray diffraction, resulting in a superlattice structure. This film consisted of nanosized grains with two phases of InGaO 3(ZnO)1 and InGaO3(ZnO)2 in InGaZnO polycrystal. On the other hand, the use of no ZnO buffer layer and randomly oriented ZnO buffer induced the absence of the InGaZnO crystal related patterns. This indicated that the ZnO buffer with high c-axis preferred orientation reduced the critical temperature for the crystallization of the layered InGaZnO. The InGaZnO thin films formed with nanosized grains of two-phase InGaO 3(ZnO)m superlattice showed considerably low thermal conductivity (1.14 Wm-1 K-1 at 325 K) due to the phonon scattering from grain boundaries as well as interfaces in the superlattice grain.",
author = "Cho, {Sung Woon} and Kim, {Jun Hyeon} and Sangwoo Shin and Cho, {Hyung Hee} and Cho, {Hyung Koun}",
year = "2013",
month = "10",
day = "31",
doi = "10.1155/2013/909786",
language = "English",
volume = "2013",
journal = "Journal of Nanomaterials",
issn = "1687-4110",
publisher = "Hindawi Publishing Corporation",

}

All-solution-processed InGaO3(ZnO)m thin films with layered structure. / Cho, Sung Woon; Kim, Jun Hyeon; Shin, Sangwoo; Cho, Hyung Hee; Cho, Hyung Koun.

In: Journal of Nanomaterials, Vol. 2013, 909786, 31.10.2013.

Research output: Contribution to journalArticle

TY - JOUR

T1 - All-solution-processed InGaO3(ZnO)m thin films with layered structure

AU - Cho, Sung Woon

AU - Kim, Jun Hyeon

AU - Shin, Sangwoo

AU - Cho, Hyung Hee

AU - Cho, Hyung Koun

PY - 2013/10/31

Y1 - 2013/10/31

N2 - We fabricated the crystallized InGaZnO thin films by sol-gel process and high-temperature annealing at 900°C. Prior to the deposition of the InGaZnO, ZnO buffer layers were also coated by sol-gel process, which was followed by thermal annealing. After the synthesis and annealing of the InGaZnO, the InGaZnO thin film on the ZnO buffer layer with preferred orientation showed periodic diffraction patterns in the X-ray diffraction, resulting in a superlattice structure. This film consisted of nanosized grains with two phases of InGaO 3(ZnO)1 and InGaO3(ZnO)2 in InGaZnO polycrystal. On the other hand, the use of no ZnO buffer layer and randomly oriented ZnO buffer induced the absence of the InGaZnO crystal related patterns. This indicated that the ZnO buffer with high c-axis preferred orientation reduced the critical temperature for the crystallization of the layered InGaZnO. The InGaZnO thin films formed with nanosized grains of two-phase InGaO 3(ZnO)m superlattice showed considerably low thermal conductivity (1.14 Wm-1 K-1 at 325 K) due to the phonon scattering from grain boundaries as well as interfaces in the superlattice grain.

AB - We fabricated the crystallized InGaZnO thin films by sol-gel process and high-temperature annealing at 900°C. Prior to the deposition of the InGaZnO, ZnO buffer layers were also coated by sol-gel process, which was followed by thermal annealing. After the synthesis and annealing of the InGaZnO, the InGaZnO thin film on the ZnO buffer layer with preferred orientation showed periodic diffraction patterns in the X-ray diffraction, resulting in a superlattice structure. This film consisted of nanosized grains with two phases of InGaO 3(ZnO)1 and InGaO3(ZnO)2 in InGaZnO polycrystal. On the other hand, the use of no ZnO buffer layer and randomly oriented ZnO buffer induced the absence of the InGaZnO crystal related patterns. This indicated that the ZnO buffer with high c-axis preferred orientation reduced the critical temperature for the crystallization of the layered InGaZnO. The InGaZnO thin films formed with nanosized grains of two-phase InGaO 3(ZnO)m superlattice showed considerably low thermal conductivity (1.14 Wm-1 K-1 at 325 K) due to the phonon scattering from grain boundaries as well as interfaces in the superlattice grain.

UR - http://www.scopus.com/inward/record.url?scp=84886495994&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84886495994&partnerID=8YFLogxK

U2 - 10.1155/2013/909786

DO - 10.1155/2013/909786

M3 - Article

VL - 2013

JO - Journal of Nanomaterials

JF - Journal of Nanomaterials

SN - 1687-4110

M1 - 909786

ER -