All-solution-processed, transparent thin-film transistors based on metal oxides and single-walled carbon nanotubes

Jee Ho Park, Su Jeong Lee, Tae Il Lee, Jung Han Kim, Chul Hong Kim, Gee Sung Chae, Moon Ho Ham, Hong Koo Baik, Jae Min Myoung

Research output: Contribution to journalArticle

27 Citations (Scopus)

Abstract

The fabrication of fully transparent thin-film transistor (TFT) arrays composed of metal oxides and SWCNTs was performed on a glass substrate through simple all-solution-processed, vacuum-free routes followed by thermal annealing treatments at 350 °C which is the lowest processing temperature reported to date. We adopted fluorine-doped indium tin oxide (ITO:F), stacked zirconium oxide/aluminium oxide/zirconium oxide (ZAZ), indium zinc oxide (IZO), and single-walled carbon nanotubes (SWCNTs) for gate electrodes, gate insulators, channel layers, and source/drain electrodes, respectively, which enabled the fabrication of TFT with desired-performance at a sufficiently low annealing temperature of 350 °C that is compatible with polymer substrates. The TFT fabricated with a back-gated SWCNT/IZO/ZAZ/ITO:F structure was highly transparent with a transmittance of 76.5% in the visible range and exhibited a mobility of 0.45 cm2 V-1 s-1 and an on/off current ratio of ∼106, which are comparable to those of hydrogenated amorphous silicon TFTs. These results suggest that all-solution-processed TFTs have the potential for lost-cost, fully transparent, flexible device applications.

Original languageEnglish
Pages (from-to)1840-1845
Number of pages6
JournalJournal of Materials Chemistry C
Volume1
Issue number9
DOIs
Publication statusPublished - 2013 Mar 7

All Science Journal Classification (ASJC) codes

  • Chemistry(all)
  • Materials Chemistry

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