AlN passivation layer-mediated improvement in tensile failure of flexible ZnO:Al thin films

Hong Rak Choi, Bhaskar Chandra Mohanty, Jong Seong Kim, Yong Soo Cho

Research output: Contribution to journalArticle

16 Citations (Scopus)

Abstract

AlN passivation layer-mediated improvement in tensile failure of ZnO:Al thin films on polyethersulfone substrates is investigated. ZnO:Al films without any passivation layer were brittle with a crack-initiating bending strain εc of only about 1.13% with a saturated crack density Γs of 0.10 μm-1 and a fracture energy Δ of 49.6 J m-2. On passivation by an AlN overlayer, the fracture energy of the system increased considerably and a corresponding improvement in εc was observed. AlN layers deposited at higher discharge powers yielded higher fracture energy and exhibited better performance in terms of εc and Γs.

Original languageEnglish
Pages (from-to)2471-2474
Number of pages4
JournalACS Applied Materials and Interfaces
Volume2
Issue number9
DOIs
Publication statusPublished - 2010 Sep 22

All Science Journal Classification (ASJC) codes

  • Materials Science(all)

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