Abstract
AlN passivation layer-mediated improvement in tensile failure of ZnO:Al thin films on polyethersulfone substrates is investigated. ZnO:Al films without any passivation layer were brittle with a crack-initiating bending strain εc of only about 1.13% with a saturated crack density Γs of 0.10 μm-1 and a fracture energy Δ of 49.6 J m-2. On passivation by an AlN overlayer, the fracture energy of the system increased considerably and a corresponding improvement in εc was observed. AlN layers deposited at higher discharge powers yielded higher fracture energy and exhibited better performance in terms of εc and Γs.
| Original language | English |
|---|---|
| Pages (from-to) | 2471-2474 |
| Number of pages | 4 |
| Journal | ACS Applied Materials and Interfaces |
| Volume | 2 |
| Issue number | 9 |
| DOIs | |
| Publication status | Published - 2010 Sep 22 |
All Science Journal Classification (ASJC) codes
- Materials Science(all)
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Choi, H. R., Mohanty, B. C., Kim, J. S., & Cho, Y. S. (2010). AlN passivation layer-mediated improvement in tensile failure of flexible ZnO:Al thin films. ACS Applied Materials and Interfaces, 2(9), 2471-2474. https://doi.org/10.1021/am100386s