AlN passivation layer-mediated improvement in tensile failure of flexible ZnO:Al thin films

Hong Rak Choi; Bhaskar Chandra Mohanty; Jong Seong Kim; Yong Soo Cho

doi:10.1021/am100386s

AlN passivation layer-mediated improvement in tensile failure of flexible ZnO:Al thin films

Hong Rak Choi, Bhaskar Chandra Mohanty, Jong Seong Kim, Yong Soo Cho

Department of Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

18 Citations (Scopus)

Abstract

AlN passivation layer-mediated improvement in tensile failure of ZnO:Al thin films on polyethersulfone substrates is investigated. ZnO:Al films without any passivation layer were brittle with a crack-initiating bending strain ε_c of only about 1.13% with a saturated crack density Γ_s of 0.10 μm^-1 and a fracture energy Δ of 49.6 J m^-2. On passivation by an AlN overlayer, the fracture energy of the system increased considerably and a corresponding improvement in ε_c was observed. AlN layers deposited at higher discharge powers yielded higher fracture energy and exhibited better performance in terms of ε_c and Γ_s.

Original language	English
Pages (from-to)	2471-2474
Number of pages	4
Journal	ACS Applied Materials and Interfaces
Volume	2
Issue number	9
DOIs	https://doi.org/10.1021/am100386s
Publication status	Published - 2010 Sep 22

All Science Journal Classification (ASJC) codes

Materials Science(all)

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10.1021/am100386s

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abstract = "AlN passivation layer-mediated improvement in tensile failure of ZnO:Al thin films on polyethersulfone substrates is investigated. ZnO:Al films without any passivation layer were brittle with a crack-initiating bending strain εc of only about 1.13% with a saturated crack density Γs of 0.10 μm-1 and a fracture energy Δ of 49.6 J m-2. On passivation by an AlN overlayer, the fracture energy of the system increased considerably and a corresponding improvement in εc was observed. AlN layers deposited at higher discharge powers yielded higher fracture energy and exhibited better performance in terms of εc and Γs.",

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AU - Choi, Hong Rak

AU - Mohanty, Bhaskar Chandra

AU - Kim, Jong Seong

AU - Cho, Yong Soo

PY - 2010/9/22

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N2 - AlN passivation layer-mediated improvement in tensile failure of ZnO:Al thin films on polyethersulfone substrates is investigated. ZnO:Al films without any passivation layer were brittle with a crack-initiating bending strain εc of only about 1.13% with a saturated crack density Γs of 0.10 μm-1 and a fracture energy Δ of 49.6 J m-2. On passivation by an AlN overlayer, the fracture energy of the system increased considerably and a corresponding improvement in εc was observed. AlN layers deposited at higher discharge powers yielded higher fracture energy and exhibited better performance in terms of εc and Γs.

AB - AlN passivation layer-mediated improvement in tensile failure of ZnO:Al thin films on polyethersulfone substrates is investigated. ZnO:Al films without any passivation layer were brittle with a crack-initiating bending strain εc of only about 1.13% with a saturated crack density Γs of 0.10 μm-1 and a fracture energy Δ of 49.6 J m-2. On passivation by an AlN overlayer, the fracture energy of the system increased considerably and a corresponding improvement in εc was observed. AlN layers deposited at higher discharge powers yielded higher fracture energy and exhibited better performance in terms of εc and Γs.

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