AlN passivation layer-mediated improvement in tensile failure of flexible ZnO:Al thin films

Hong Rak Choi; Bhaskar Chandra Mohanty; Jong Seong Kim; Yong Soo Cho

doi:10.1021/am100386s

AlN passivation layer-mediated improvement in tensile failure of flexible ZnO:Al thin films

Hong Rak Choi, Bhaskar Chandra Mohanty, Jong Seong Kim, Yong Soo Cho

Department of Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

19 Citations (Scopus)

Abstract

AlN passivation layer-mediated improvement in tensile failure of ZnO:Al thin films on polyethersulfone substrates is investigated. ZnO:Al films without any passivation layer were brittle with a crack-initiating bending strain ε_c of only about 1.13% with a saturated crack density Γ_s of 0.10 μm^-1 and a fracture energy Δ of 49.6 J m^-2. On passivation by an AlN overlayer, the fracture energy of the system increased considerably and a corresponding improvement in ε_c was observed. AlN layers deposited at higher discharge powers yielded higher fracture energy and exhibited better performance in terms of ε_c and Γ_s.

Original language	English
Pages (from-to)	2471-2474
Number of pages	4
Journal	ACS Applied Materials and Interfaces
Volume	2
Issue number	9
DOIs	https://doi.org/10.1021/am100386s
Publication status	Published - 2010 Sep 22

All Science Journal Classification (ASJC) codes

Materials Science(all)

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10.1021/am100386s

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@article{6f637d3861bc4514a10f0a175b9eb2ab,

title = "AlN passivation layer-mediated improvement in tensile failure of flexible ZnO:Al thin films",

abstract = "AlN passivation layer-mediated improvement in tensile failure of ZnO:Al thin films on polyethersulfone substrates is investigated. ZnO:Al films without any passivation layer were brittle with a crack-initiating bending strain εc of only about 1.13% with a saturated crack density Γs of 0.10 μm-1 and a fracture energy Δ of 49.6 J m-2. On passivation by an AlN overlayer, the fracture energy of the system increased considerably and a corresponding improvement in εc was observed. AlN layers deposited at higher discharge powers yielded higher fracture energy and exhibited better performance in terms of εc and Γs.",

author = "Choi, {Hong Rak} and Mohanty, {Bhaskar Chandra} and Kim, {Jong Seong} and Cho, {Yong Soo}",

year = "2010",

month = sep,

day = "22",

doi = "10.1021/am100386s",

language = "English",

volume = "2",

pages = "2471--2474",

journal = "ACS applied materials & interfaces",

issn = "1944-8244",

publisher = "American Chemical Society",

number = "9",

}

TY - JOUR

T1 - AlN passivation layer-mediated improvement in tensile failure of flexible ZnO:Al thin films

AU - Choi, Hong Rak

AU - Mohanty, Bhaskar Chandra

AU - Kim, Jong Seong

AU - Cho, Yong Soo

PY - 2010/9/22

Y1 - 2010/9/22

N2 - AlN passivation layer-mediated improvement in tensile failure of ZnO:Al thin films on polyethersulfone substrates is investigated. ZnO:Al films without any passivation layer were brittle with a crack-initiating bending strain εc of only about 1.13% with a saturated crack density Γs of 0.10 μm-1 and a fracture energy Δ of 49.6 J m-2. On passivation by an AlN overlayer, the fracture energy of the system increased considerably and a corresponding improvement in εc was observed. AlN layers deposited at higher discharge powers yielded higher fracture energy and exhibited better performance in terms of εc and Γs.

AB - AlN passivation layer-mediated improvement in tensile failure of ZnO:Al thin films on polyethersulfone substrates is investigated. ZnO:Al films without any passivation layer were brittle with a crack-initiating bending strain εc of only about 1.13% with a saturated crack density Γs of 0.10 μm-1 and a fracture energy Δ of 49.6 J m-2. On passivation by an AlN overlayer, the fracture energy of the system increased considerably and a corresponding improvement in εc was observed. AlN layers deposited at higher discharge powers yielded higher fracture energy and exhibited better performance in terms of εc and Γs.

UR - http://www.scopus.com/inward/record.url?scp=78650650799&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=78650650799&partnerID=8YFLogxK

U2 - 10.1021/am100386s

DO - 10.1021/am100386s

M3 - Article

C2 - 20718429

AN - SCOPUS:78650650799

VL - 2

SP - 2471

EP - 2474

JO - ACS applied materials & interfaces

JF - ACS applied materials & interfaces

SN - 1944-8244

IS - 9

ER -

AlN passivation layer-mediated improvement in tensile failure of flexible ZnO:Al thin films

Abstract

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