Abstract
AlN passivation layer-mediated improvement in tensile failure of ZnO:Al thin films on polyethersulfone substrates is investigated. ZnO:Al films without any passivation layer were brittle with a crack-initiating bending strain εc of only about 1.13% with a saturated crack density Γs of 0.10 μm-1 and a fracture energy Δ of 49.6 J m-2. On passivation by an AlN overlayer, the fracture energy of the system increased considerably and a corresponding improvement in εc was observed. AlN layers deposited at higher discharge powers yielded higher fracture energy and exhibited better performance in terms of εc and Γs.
Original language | English |
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Pages (from-to) | 2471-2474 |
Number of pages | 4 |
Journal | ACS Applied Materials and Interfaces |
Volume | 2 |
Issue number | 9 |
DOIs | |
Publication status | Published - 2010 Sep 22 |
All Science Journal Classification (ASJC) codes
- Materials Science(all)