Abstract
The barrier properties and failure mechanisms for many diffusion barriers in high-density volatile and non-volatile capacitors were reviewed. Based on failure mechanisms of these barriers reported by others, we suggested the new design concept for a diffusion barrier and developed the new Ta + CeO2 and Ta + RuO2 barriers. Although both barriers were shown to exhibit good diffusion barrier properties, however, oxide-incorporated barriers result in the surface oxidation of the under-layer during deposition and/or post-thermal budgets, resulting in the degradation of capacitor performance. The design concept for a diffusion barrier should be changed to sacrificial oxygen diffusion barrier concept, and both the RuTiN and the RuTiO films, as new sacrificial oxygen diffusion barriers, were proposed. New RuTiN and RuTiO barriers showed the higher oxidation resistance and cell capacitance and the lower contact resistance up to high temperatures. Therefore, the design concept of a sacrificial diffusion barrier should be emphasized to achieve high-density dynamic and ferroelectric random access memory devices.
| Original language | English |
|---|---|
| Pages (from-to) | 275-371 |
| Number of pages | 97 |
| Journal | Progress in Materials Science |
| Volume | 48 |
| Issue number | 4 |
| DOIs | |
| Publication status | Published - 2003 Jan 1 |
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All Science Journal Classification (ASJC) codes
- Materials Science(all)
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Alteration for a diffusion barrier design concept in future high-density dynamic and ferroelectric random access memory devices. / Yoon, Dong Soo; Roh, Jae Sung; Lee, Sung Man; Baik, Hong Koo.
In: Progress in Materials Science, Vol. 48, No. 4, 01.01.2003, p. 275-371.Research output: Contribution to journal › Article
TY - JOUR
T1 - Alteration for a diffusion barrier design concept in future high-density dynamic and ferroelectric random access memory devices
AU - Yoon, Dong Soo
AU - Roh, Jae Sung
AU - Lee, Sung Man
AU - Baik, Hong Koo
PY - 2003/1/1
Y1 - 2003/1/1
N2 - The barrier properties and failure mechanisms for many diffusion barriers in high-density volatile and non-volatile capacitors were reviewed. Based on failure mechanisms of these barriers reported by others, we suggested the new design concept for a diffusion barrier and developed the new Ta + CeO2 and Ta + RuO2 barriers. Although both barriers were shown to exhibit good diffusion barrier properties, however, oxide-incorporated barriers result in the surface oxidation of the under-layer during deposition and/or post-thermal budgets, resulting in the degradation of capacitor performance. The design concept for a diffusion barrier should be changed to sacrificial oxygen diffusion barrier concept, and both the RuTiN and the RuTiO films, as new sacrificial oxygen diffusion barriers, were proposed. New RuTiN and RuTiO barriers showed the higher oxidation resistance and cell capacitance and the lower contact resistance up to high temperatures. Therefore, the design concept of a sacrificial diffusion barrier should be emphasized to achieve high-density dynamic and ferroelectric random access memory devices.
AB - The barrier properties and failure mechanisms for many diffusion barriers in high-density volatile and non-volatile capacitors were reviewed. Based on failure mechanisms of these barriers reported by others, we suggested the new design concept for a diffusion barrier and developed the new Ta + CeO2 and Ta + RuO2 barriers. Although both barriers were shown to exhibit good diffusion barrier properties, however, oxide-incorporated barriers result in the surface oxidation of the under-layer during deposition and/or post-thermal budgets, resulting in the degradation of capacitor performance. The design concept for a diffusion barrier should be changed to sacrificial oxygen diffusion barrier concept, and both the RuTiN and the RuTiO films, as new sacrificial oxygen diffusion barriers, were proposed. New RuTiN and RuTiO barriers showed the higher oxidation resistance and cell capacitance and the lower contact resistance up to high temperatures. Therefore, the design concept of a sacrificial diffusion barrier should be emphasized to achieve high-density dynamic and ferroelectric random access memory devices.
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U2 - 10.1016/S0079-6425(02)00012-9
DO - 10.1016/S0079-6425(02)00012-9
M3 - Article
AN - SCOPUS:0037282644
VL - 48
SP - 275
EP - 371
JO - Progress in Materials Science
JF - Progress in Materials Science
SN - 0079-6425
IS - 4
ER -