Low-temperature crystallization of amorphous Si (a-Si) has been investigated by employing alternating magnetic field. Even at 430 °C, with the aid of magnetic field that was applied in the perpendicular direction to a-Si films without any metal catalyst and electrical contact, crystalline structure of the Si films was changed from amorphous to polycrystalline. The evaluated crystal fraction of the polycrystalline Si (poly-Si) was about 90% and twin boundaries were observed in the poly-Si films. Thin-film transistors using poly-Si fabricated by applying the alternating magnetic field showed superior drain current uniformity of below ±7% due to the smooth grain boundary without protrusion. The method using alternating magnetic field represents an excellent approach to the fabrication of uniform switching electronics for flat panel displays.
Bibliographical noteFunding Information:
We would like to thank Prof. Dr. Sung Bo Lee at Seoul National University for helpful suggestions, and all the members of the R&D group for their support and cooperation. Also, this research was supported by LG Display for academic–industrial cooperation program.
All Science Journal Classification (ASJC) codes
- Condensed Matter Physics
- Inorganic Chemistry
- Materials Chemistry