Alternating magnetic field-assisted crystallization of Si films without metal catalyst

Hyun Sik Seo, Chang Dong Kim, In Byeong Kang, In Jae Chung, Min Chang Jeong, Jae Min Myoung, Dong Hoon Shin

Research output: Contribution to journalArticle

3 Citations (Scopus)

Abstract

Low-temperature crystallization of amorphous Si (a-Si) has been investigated by employing alternating magnetic field. Even at 430 °C, with the aid of magnetic field that was applied in the perpendicular direction to a-Si films without any metal catalyst and electrical contact, crystalline structure of the Si films was changed from amorphous to polycrystalline. The evaluated crystal fraction of the polycrystalline Si (poly-Si) was about 90% and twin boundaries were observed in the poly-Si films. Thin-film transistors using poly-Si fabricated by applying the alternating magnetic field showed superior drain current uniformity of below ±7% due to the smooth grain boundary without protrusion. The method using alternating magnetic field represents an excellent approach to the fabrication of uniform switching electronics for flat panel displays.

Original languageEnglish
Pages (from-to)5317-5320
Number of pages4
JournalJournal of Crystal Growth
Volume310
Issue number24
DOIs
Publication statusPublished - 2008 Dec 1

Fingerprint

Crystallization
metal films
Metals
crystallization
Magnetic fields
catalysts
Catalysts
magnetic fields
Flat panel displays
flat panel displays
Drain current
Thin film transistors
electric contacts
Grain boundaries
Electronic equipment
transistors
grain boundaries
Crystalline materials
Fabrication
Crystals

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry

Cite this

Seo, Hyun Sik ; Kim, Chang Dong ; Kang, In Byeong ; Chung, In Jae ; Jeong, Min Chang ; Myoung, Jae Min ; Shin, Dong Hoon. / Alternating magnetic field-assisted crystallization of Si films without metal catalyst. In: Journal of Crystal Growth. 2008 ; Vol. 310, No. 24. pp. 5317-5320.
@article{b205c618dcf24db4be2c7ad07c88cc74,
title = "Alternating magnetic field-assisted crystallization of Si films without metal catalyst",
abstract = "Low-temperature crystallization of amorphous Si (a-Si) has been investigated by employing alternating magnetic field. Even at 430 °C, with the aid of magnetic field that was applied in the perpendicular direction to a-Si films without any metal catalyst and electrical contact, crystalline structure of the Si films was changed from amorphous to polycrystalline. The evaluated crystal fraction of the polycrystalline Si (poly-Si) was about 90{\%} and twin boundaries were observed in the poly-Si films. Thin-film transistors using poly-Si fabricated by applying the alternating magnetic field showed superior drain current uniformity of below ±7{\%} due to the smooth grain boundary without protrusion. The method using alternating magnetic field represents an excellent approach to the fabrication of uniform switching electronics for flat panel displays.",
author = "Seo, {Hyun Sik} and Kim, {Chang Dong} and Kang, {In Byeong} and Chung, {In Jae} and Jeong, {Min Chang} and Myoung, {Jae Min} and Shin, {Dong Hoon}",
year = "2008",
month = "12",
day = "1",
doi = "10.1016/j.jcrysgro.2008.09.182",
language = "English",
volume = "310",
pages = "5317--5320",
journal = "Journal of Crystal Growth",
issn = "0022-0248",
publisher = "Elsevier",
number = "24",

}

Alternating magnetic field-assisted crystallization of Si films without metal catalyst. / Seo, Hyun Sik; Kim, Chang Dong; Kang, In Byeong; Chung, In Jae; Jeong, Min Chang; Myoung, Jae Min; Shin, Dong Hoon.

In: Journal of Crystal Growth, Vol. 310, No. 24, 01.12.2008, p. 5317-5320.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Alternating magnetic field-assisted crystallization of Si films without metal catalyst

AU - Seo, Hyun Sik

AU - Kim, Chang Dong

AU - Kang, In Byeong

AU - Chung, In Jae

AU - Jeong, Min Chang

AU - Myoung, Jae Min

AU - Shin, Dong Hoon

PY - 2008/12/1

Y1 - 2008/12/1

N2 - Low-temperature crystallization of amorphous Si (a-Si) has been investigated by employing alternating magnetic field. Even at 430 °C, with the aid of magnetic field that was applied in the perpendicular direction to a-Si films without any metal catalyst and electrical contact, crystalline structure of the Si films was changed from amorphous to polycrystalline. The evaluated crystal fraction of the polycrystalline Si (poly-Si) was about 90% and twin boundaries were observed in the poly-Si films. Thin-film transistors using poly-Si fabricated by applying the alternating magnetic field showed superior drain current uniformity of below ±7% due to the smooth grain boundary without protrusion. The method using alternating magnetic field represents an excellent approach to the fabrication of uniform switching electronics for flat panel displays.

AB - Low-temperature crystallization of amorphous Si (a-Si) has been investigated by employing alternating magnetic field. Even at 430 °C, with the aid of magnetic field that was applied in the perpendicular direction to a-Si films without any metal catalyst and electrical contact, crystalline structure of the Si films was changed from amorphous to polycrystalline. The evaluated crystal fraction of the polycrystalline Si (poly-Si) was about 90% and twin boundaries were observed in the poly-Si films. Thin-film transistors using poly-Si fabricated by applying the alternating magnetic field showed superior drain current uniformity of below ±7% due to the smooth grain boundary without protrusion. The method using alternating magnetic field represents an excellent approach to the fabrication of uniform switching electronics for flat panel displays.

UR - http://www.scopus.com/inward/record.url?scp=56949106371&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=56949106371&partnerID=8YFLogxK

U2 - 10.1016/j.jcrysgro.2008.09.182

DO - 10.1016/j.jcrysgro.2008.09.182

M3 - Article

AN - SCOPUS:56949106371

VL - 310

SP - 5317

EP - 5320

JO - Journal of Crystal Growth

JF - Journal of Crystal Growth

SN - 0022-0248

IS - 24

ER -