Abstract
Low-temperature crystallization of amorphous Si (a-Si) has been investigated by employing alternating magnetic field. Even at 430 °C, with the aid of magnetic field that was applied in the perpendicular direction to a-Si films without any metal catalyst and electrical contact, crystalline structure of the Si films was changed from amorphous to polycrystalline. The evaluated crystal fraction of the polycrystalline Si (poly-Si) was about 90% and twin boundaries were observed in the poly-Si films. Thin-film transistors using poly-Si fabricated by applying the alternating magnetic field showed superior drain current uniformity of below ±7% due to the smooth grain boundary without protrusion. The method using alternating magnetic field represents an excellent approach to the fabrication of uniform switching electronics for flat panel displays.
| Original language | English |
|---|---|
| Pages (from-to) | 5317-5320 |
| Number of pages | 4 |
| Journal | Journal of Crystal Growth |
| Volume | 310 |
| Issue number | 24 |
| DOIs | |
| Publication status | Published - 2008 Dec 1 |
Bibliographical note
Funding Information:We would like to thank Prof. Dr. Sung Bo Lee at Seoul National University for helpful suggestions, and all the members of the R&D group for their support and cooperation. Also, this research was supported by LG Display for academic–industrial cooperation program.
All Science Journal Classification (ASJC) codes
- Condensed Matter Physics
- Inorganic Chemistry
- Materials Chemistry