Alternating magnetic field-assisted crystallization of Si films without metal catalyst

Hyun Sik Seo, Chang Dong Kim, In Byeong Kang, In Jae Chung, Min Chang Jeong, Jae Min Myoung, Dong Hoon Shin

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Abstract

Low-temperature crystallization of amorphous Si (a-Si) has been investigated by employing alternating magnetic field. Even at 430 °C, with the aid of magnetic field that was applied in the perpendicular direction to a-Si films without any metal catalyst and electrical contact, crystalline structure of the Si films was changed from amorphous to polycrystalline. The evaluated crystal fraction of the polycrystalline Si (poly-Si) was about 90% and twin boundaries were observed in the poly-Si films. Thin-film transistors using poly-Si fabricated by applying the alternating magnetic field showed superior drain current uniformity of below ±7% due to the smooth grain boundary without protrusion. The method using alternating magnetic field represents an excellent approach to the fabrication of uniform switching electronics for flat panel displays.

Original languageEnglish
Pages (from-to)5317-5320
Number of pages4
JournalJournal of Crystal Growth
Volume310
Issue number24
DOIs
Publication statusPublished - 2008 Dec 1

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All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry

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