Aluminum-doped zinc oxide films produced by atomic layer deposition were investigated for use as anodes in organic light emitting diode (OLED) devices. Al-doped ZnO (AZO) films (∼200 nm thick) were deposited at temperatures of 200, 230, and 260 °C and the AZO film deposited at 260 °C demonstrated carrier mobility, carrier concentration, resistivity, and transmittance values of 16.2 cm2V-1s-1, 5.18 × 1020 cm-3, 7.34 × 10-4 Ωcm, and 90%, respectively. OLED devices with a DNTPD/TAPC/Bebq2:10% doped RP-411/Bphen/LiF/Al structure on a glass substrate fabricated using an AZO anode formed at 260 °C showed turn-on voltage, maximum luminance, and current efficiency values of 5.3 V, 16680 cd/m2, and 4.8 cd/A, respectively.
|Journal||Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films|
|Publication status||Published - 2013 Jan|
Bibliographical noteFunding Information:
This work was supported by the Industrial Strategic Technology Development Program (Grant No. 10041926) funded by the Ministry of Knowledge Economy (MKE, Korea). S.C.G. is very grateful to the Brain Korea office for financial support provided through a post-doctorate fellowship.
All Science Journal Classification (ASJC) codes
- Condensed Matter Physics
- Surfaces and Interfaces
- Surfaces, Coatings and Films