Aluminum nitride thin films deposited on a low-temperature cofired ceramics substrate by reactive magnetron sputtering were investigated with regard to their crystal orientation and microstructural characteristics. Strong c-axis orientations of AlN thin films were observed when either a higher deposition temperature or an RF bias was adopted. This orientation was believed to be responsible for the high thermal conductivity of 26 W/mK for the AlN films deposited at 700°C under 25-W bias. Photoluminescence spectrum in the wavelength range of 350-650 nm was analyzed to prove the involvement of potential oxygen-related defects in the thin films.
All Science Journal Classification (ASJC) codes
- Ceramics and Composites
- Materials Chemistry