Aluminum nitride thin films on an LTCC substrate

Jung W. Lee, Jerome J. Cuomo, Yong S. Cho, Roupen L. Keusseyan

Research output: Contribution to journalArticle

17 Citations (Scopus)

Abstract

Aluminum nitride thin films deposited on a low-temperature cofired ceramics substrate by reactive magnetron sputtering were investigated with regard to their crystal orientation and microstructural characteristics. Strong c-axis orientations of AlN thin films were observed when either a higher deposition temperature or an RF bias was adopted. This orientation was believed to be responsible for the high thermal conductivity of 26 W/mK for the AlN films deposited at 700°C under 25-W bias. Photoluminescence spectrum in the wavelength range of 350-650 nm was analyzed to prove the involvement of potential oxygen-related defects in the thin films.

Original languageEnglish
Pages (from-to)1977-1980
Number of pages4
JournalJournal of the American Ceramic Society
Volume88
Issue number7
DOIs
Publication statusPublished - 2005 Jul 1

All Science Journal Classification (ASJC) codes

  • Ceramics and Composites
  • Materials Chemistry

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