Aluminum nitride thin films on an LTCC substrate

Jung W. Lee, Jerome J. Cuomo, Yong Soo Cho, Roupen L. Keusseyan

Research output: Contribution to journalArticle

15 Citations (Scopus)

Abstract

Aluminum nitride thin films deposited on a low-temperature cofired ceramics substrate by reactive magnetron sputtering were investigated with regard to their crystal orientation and microstructural characteristics. Strong c-axis orientations of AlN thin films were observed when either a higher deposition temperature or an RF bias was adopted. This orientation was believed to be responsible for the high thermal conductivity of 26 W/mK for the AlN films deposited at 700°C under 25-W bias. Photoluminescence spectrum in the wavelength range of 350-650 nm was analyzed to prove the involvement of potential oxygen-related defects in the thin films.

Original languageEnglish
Pages (from-to)1977-1980
Number of pages4
JournalJournal of the American Ceramic Society
Volume88
Issue number7
DOIs
Publication statusPublished - 2005 Jul 1

Fingerprint

Aluminum nitride
aluminum
substrate
Crystal orientation
Thin films
Substrates
Reactive sputtering
Magnetron sputtering
Thermal conductivity
Photoluminescence
thermal conductivity
ceramics
Oxygen
defect
Wavelength
Temperature
Defects
crystal
wavelength
oxygen

All Science Journal Classification (ASJC) codes

  • Ceramics and Composites
  • Materials Chemistry

Cite this

Lee, Jung W. ; Cuomo, Jerome J. ; Cho, Yong Soo ; Keusseyan, Roupen L. / Aluminum nitride thin films on an LTCC substrate. In: Journal of the American Ceramic Society. 2005 ; Vol. 88, No. 7. pp. 1977-1980.
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Aluminum nitride thin films on an LTCC substrate. / Lee, Jung W.; Cuomo, Jerome J.; Cho, Yong Soo; Keusseyan, Roupen L.

In: Journal of the American Ceramic Society, Vol. 88, No. 7, 01.07.2005, p. 1977-1980.

Research output: Contribution to journalArticle

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