Ambient pressure dried SiO2 aerogel film on GaAs for application to interlayer dielectrics

Sung Woo Park, Sang Bae Jung, Jun Kyu Yang, Hyung-Ho Park, Hae Cheon Kim

Research output: Contribution to journalArticle

3 Citations (Scopus)

Abstract

The interfacial layer between ambient pressure dried SiO2 aerogel film and GaAs has been examined with emphasis on varying the concentration of aerogel modification agent, trimethylchlorosilane (TMCS) in n-hexane solution. Through surface modification of aerogel, HCl was formed from the reaction between TMCS and -OH bonds of silica aerogel surface, and the GaAs surface could be influenced according to the TMCS concentration in surface modifying solution. When mol concentration of TMCS is 0.066%, the GaAs interface with aerogel was roughly etched from the reflection of surface microstructure of aerogel. However, when the aerogel was modified with 0.05 mol.% of TMCS, uniform shape of the GaAs interface could be obtained and the resultant electrical property, especially leakage current density, showed almost the same behavior when the aerogel was applied to Si system.

Original languageEnglish
Pages (from-to)461-464
Number of pages4
JournalThin Solid Films
Volume420-421
DOIs
Publication statusPublished - 2002 Dec 2

Fingerprint

Aerogels
aerogels
interlayers
gallium arsenide
Hexane
Leakage currents
Silicon Dioxide
Surface treatment
Electric properties
leakage
Current density
electrical properties
Silica
trimethylchlorosilane
current density
silicon dioxide
microstructure
Microstructure

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry

Cite this

Park, Sung Woo ; Jung, Sang Bae ; Yang, Jun Kyu ; Park, Hyung-Ho ; Kim, Hae Cheon. / Ambient pressure dried SiO2 aerogel film on GaAs for application to interlayer dielectrics. In: Thin Solid Films. 2002 ; Vol. 420-421. pp. 461-464.
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Ambient pressure dried SiO2 aerogel film on GaAs for application to interlayer dielectrics. / Park, Sung Woo; Jung, Sang Bae; Yang, Jun Kyu; Park, Hyung-Ho; Kim, Hae Cheon.

In: Thin Solid Films, Vol. 420-421, 02.12.2002, p. 461-464.

Research output: Contribution to journalArticle

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T1 - Ambient pressure dried SiO2 aerogel film on GaAs for application to interlayer dielectrics

AU - Park, Sung Woo

AU - Jung, Sang Bae

AU - Yang, Jun Kyu

AU - Park, Hyung-Ho

AU - Kim, Hae Cheon

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AB - The interfacial layer between ambient pressure dried SiO2 aerogel film and GaAs has been examined with emphasis on varying the concentration of aerogel modification agent, trimethylchlorosilane (TMCS) in n-hexane solution. Through surface modification of aerogel, HCl was formed from the reaction between TMCS and -OH bonds of silica aerogel surface, and the GaAs surface could be influenced according to the TMCS concentration in surface modifying solution. When mol concentration of TMCS is 0.066%, the GaAs interface with aerogel was roughly etched from the reflection of surface microstructure of aerogel. However, when the aerogel was modified with 0.05 mol.% of TMCS, uniform shape of the GaAs interface could be obtained and the resultant electrical property, especially leakage current density, showed almost the same behavior when the aerogel was applied to Si system.

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