Abstract
The interfacial layer between ambient pressure dried SiO2 aerogel film and GaAs has been examined with emphasis on varying the concentration of aerogel modification agent, trimethylchlorosilane (TMCS) in n-hexane solution. Through surface modification of aerogel, HCl was formed from the reaction between TMCS and -OH bonds of silica aerogel surface, and the GaAs surface could be influenced according to the TMCS concentration in surface modifying solution. When mol concentration of TMCS is 0.066%, the GaAs interface with aerogel was roughly etched from the reflection of surface microstructure of aerogel. However, when the aerogel was modified with 0.05 mol.% of TMCS, uniform shape of the GaAs interface could be obtained and the resultant electrical property, especially leakage current density, showed almost the same behavior when the aerogel was applied to Si system.
| Original language | English |
|---|---|
| Pages (from-to) | 461-464 |
| Number of pages | 4 |
| Journal | Thin Solid Films |
| Volume | 420-421 |
| DOIs | |
| Publication status | Published - 2002 Dec 2 |
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All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Surfaces and Interfaces
- Surfaces, Coatings and Films
- Metals and Alloys
- Materials Chemistry
Cite this
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Ambient pressure dried SiO2 aerogel film on GaAs for application to interlayer dielectrics. / Park, Sung Woo; Jung, Sang Bae; Yang, Jun Kyu; Park, Hyung-Ho; Kim, Hae Cheon.
In: Thin Solid Films, Vol. 420-421, 02.12.2002, p. 461-464.Research output: Contribution to journal › Article
TY - JOUR
T1 - Ambient pressure dried SiO2 aerogel film on GaAs for application to interlayer dielectrics
AU - Park, Sung Woo
AU - Jung, Sang Bae
AU - Yang, Jun Kyu
AU - Park, Hyung-Ho
AU - Kim, Hae Cheon
PY - 2002/12/2
Y1 - 2002/12/2
N2 - The interfacial layer between ambient pressure dried SiO2 aerogel film and GaAs has been examined with emphasis on varying the concentration of aerogel modification agent, trimethylchlorosilane (TMCS) in n-hexane solution. Through surface modification of aerogel, HCl was formed from the reaction between TMCS and -OH bonds of silica aerogel surface, and the GaAs surface could be influenced according to the TMCS concentration in surface modifying solution. When mol concentration of TMCS is 0.066%, the GaAs interface with aerogel was roughly etched from the reflection of surface microstructure of aerogel. However, when the aerogel was modified with 0.05 mol.% of TMCS, uniform shape of the GaAs interface could be obtained and the resultant electrical property, especially leakage current density, showed almost the same behavior when the aerogel was applied to Si system.
AB - The interfacial layer between ambient pressure dried SiO2 aerogel film and GaAs has been examined with emphasis on varying the concentration of aerogel modification agent, trimethylchlorosilane (TMCS) in n-hexane solution. Through surface modification of aerogel, HCl was formed from the reaction between TMCS and -OH bonds of silica aerogel surface, and the GaAs surface could be influenced according to the TMCS concentration in surface modifying solution. When mol concentration of TMCS is 0.066%, the GaAs interface with aerogel was roughly etched from the reflection of surface microstructure of aerogel. However, when the aerogel was modified with 0.05 mol.% of TMCS, uniform shape of the GaAs interface could be obtained and the resultant electrical property, especially leakage current density, showed almost the same behavior when the aerogel was applied to Si system.
UR - http://www.scopus.com/inward/record.url?scp=0037011042&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=0037011042&partnerID=8YFLogxK
U2 - 10.1016/S0040-6090(02)00818-0
DO - 10.1016/S0040-6090(02)00818-0
M3 - Article
AN - SCOPUS:0037011042
VL - 420-421
SP - 461
EP - 464
JO - Thin Solid Films
JF - Thin Solid Films
SN - 0040-6090
ER -