Ambipolar Memristive Phenomenon in Large-Scale, Few-Layered αMoO3 Recrystallized Films

Hyungsik Kim, Gwan-Hyoung Lee, James Hone, Kenneth L. Shepard

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

Studies of two-dimensional (2D) oxide materials are not common, primarily because of the difficulty in obtaining crystal sizes large enough to fabricate devices structures from exfoliation of bulk crystals. Among the layered oxide materials, alpha molybdenum trioxide (αMoO3) is of particular interest because of its wide bandgap and high hole mobility. Here the growth of highly uniform, large-scale, ambipolar, few-layered αMoO3 that is appropriate for nanofabrication is reported. Crystal grain sizes on the order of 5 µm are observed across samples as large as 10 × 10 mm2 with hexagonal grain boundaries and surface roughness of less than 500 pm rms. Exact [010] crystal orientation, characteristic of the layered atomic structure αMoO3, is observed. The measured bandgap energy is ≈2.8 eV. Carrier mobilities in polycrystalline films are and 2.28 cm2 V−1 s−1 (hole) and 3.18 cm2 V−1 s−1 (electron) at room temperature in air. Simple field-effect device structures are characterized by ambipolar carrier transport producing memristive device characteristics, which is attributed to a polarization field produced by the strong coupling between electron and phonons in these crystals.

Original languageEnglish
Article number1801591
JournalAdvanced Materials Interfaces
Volume6
Issue number2
DOIs
Publication statusPublished - 2019 Jan 23

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Crystals
Energy gap
Crystal atomic structure
Hole mobility
Oxides
Carrier transport
Electrons
Carrier mobility
Phonons
Nanotechnology
Crystal orientation
Molybdenum
Grain boundaries
Surface roughness
Polarization
Air
Temperature

All Science Journal Classification (ASJC) codes

  • Mechanics of Materials
  • Mechanical Engineering

Cite this

Kim, Hyungsik ; Lee, Gwan-Hyoung ; Hone, James ; Shepard, Kenneth L. / Ambipolar Memristive Phenomenon in Large-Scale, Few-Layered αMoO3 Recrystallized Films. In: Advanced Materials Interfaces. 2019 ; Vol. 6, No. 2.
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Ambipolar Memristive Phenomenon in Large-Scale, Few-Layered αMoO3 Recrystallized Films. / Kim, Hyungsik; Lee, Gwan-Hyoung; Hone, James; Shepard, Kenneth L.

In: Advanced Materials Interfaces, Vol. 6, No. 2, 1801591, 23.01.2019.

Research output: Contribution to journalArticle

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