Ambipolar organic thin-film transistors using C60 /pentacene structure: Characterization of electronic structure and device property

S. J. Kang, Y. Yi, C. Y. Kim, K. Cho, J. H. Seo, M. Noh, K. Jeong, K. H. Yoo, C. N. Whang

Research output: Contribution to journalArticle

30 Citations (Scopus)

Abstract

We fabricated ambipolar organic thin-film transistors (OTFTs) using C60 and pentacene. The electronic structure of the interface was investigated by using ultraviolet photoelectron spectroscopy and x-ray photoelectron spectroscopy. The magnitude of the interface dipole and the band bendings at the interface was determined, and the complete energy level diagram for C60 on pentacene (C60 /pentacene) was obtained. The lowered band offsets, due to the enhanced charge redistribution in C60 /pentacene relative to pentacene on C60, are favorable for the ambipolar OTFTs. The measured field-effect mobilities were 0.017 cm2 V s and 0.007 cm2 V s for the p -channel and the n -channel operations, respectively. The threshold voltages were -2 V for the p channel and 15.6 V for the n channel, comparable to those of unipolar OTFTs using C60 or pentacene.

Original languageEnglish
Article number233502
Pages (from-to)1-3
Number of pages3
JournalApplied Physics Letters
Volume87
Issue number23
DOIs
Publication statusPublished - 2005 Dec 12

Fingerprint

transistors
electronic structure
thin films
photoelectron spectroscopy
ultraviolet spectroscopy
threshold voltage
x ray spectroscopy
energy levels
diagrams
dipoles

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

Cite this

@article{2d5b3d4eca67424e91d89a4629051e0e,
title = "Ambipolar organic thin-film transistors using C60 /pentacene structure: Characterization of electronic structure and device property",
abstract = "We fabricated ambipolar organic thin-film transistors (OTFTs) using C60 and pentacene. The electronic structure of the interface was investigated by using ultraviolet photoelectron spectroscopy and x-ray photoelectron spectroscopy. The magnitude of the interface dipole and the band bendings at the interface was determined, and the complete energy level diagram for C60 on pentacene (C60 /pentacene) was obtained. The lowered band offsets, due to the enhanced charge redistribution in C60 /pentacene relative to pentacene on C60, are favorable for the ambipolar OTFTs. The measured field-effect mobilities were 0.017 cm2 V s and 0.007 cm2 V s for the p -channel and the n -channel operations, respectively. The threshold voltages were -2 V for the p channel and 15.6 V for the n channel, comparable to those of unipolar OTFTs using C60 or pentacene.",
author = "Kang, {S. J.} and Y. Yi and Kim, {C. Y.} and K. Cho and Seo, {J. H.} and M. Noh and K. Jeong and Yoo, {K. H.} and Whang, {C. N.}",
year = "2005",
month = "12",
day = "12",
doi = "10.1063/1.2138810",
language = "English",
volume = "87",
pages = "1--3",
journal = "Applied Physics Letters",
issn = "0003-6951",
publisher = "American Institute of Physics Publising LLC",
number = "23",

}

Ambipolar organic thin-film transistors using C60 /pentacene structure : Characterization of electronic structure and device property. / Kang, S. J.; Yi, Y.; Kim, C. Y.; Cho, K.; Seo, J. H.; Noh, M.; Jeong, K.; Yoo, K. H.; Whang, C. N.

In: Applied Physics Letters, Vol. 87, No. 23, 233502, 12.12.2005, p. 1-3.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Ambipolar organic thin-film transistors using C60 /pentacene structure

T2 - Characterization of electronic structure and device property

AU - Kang, S. J.

AU - Yi, Y.

AU - Kim, C. Y.

AU - Cho, K.

AU - Seo, J. H.

AU - Noh, M.

AU - Jeong, K.

AU - Yoo, K. H.

AU - Whang, C. N.

PY - 2005/12/12

Y1 - 2005/12/12

N2 - We fabricated ambipolar organic thin-film transistors (OTFTs) using C60 and pentacene. The electronic structure of the interface was investigated by using ultraviolet photoelectron spectroscopy and x-ray photoelectron spectroscopy. The magnitude of the interface dipole and the band bendings at the interface was determined, and the complete energy level diagram for C60 on pentacene (C60 /pentacene) was obtained. The lowered band offsets, due to the enhanced charge redistribution in C60 /pentacene relative to pentacene on C60, are favorable for the ambipolar OTFTs. The measured field-effect mobilities were 0.017 cm2 V s and 0.007 cm2 V s for the p -channel and the n -channel operations, respectively. The threshold voltages were -2 V for the p channel and 15.6 V for the n channel, comparable to those of unipolar OTFTs using C60 or pentacene.

AB - We fabricated ambipolar organic thin-film transistors (OTFTs) using C60 and pentacene. The electronic structure of the interface was investigated by using ultraviolet photoelectron spectroscopy and x-ray photoelectron spectroscopy. The magnitude of the interface dipole and the band bendings at the interface was determined, and the complete energy level diagram for C60 on pentacene (C60 /pentacene) was obtained. The lowered band offsets, due to the enhanced charge redistribution in C60 /pentacene relative to pentacene on C60, are favorable for the ambipolar OTFTs. The measured field-effect mobilities were 0.017 cm2 V s and 0.007 cm2 V s for the p -channel and the n -channel operations, respectively. The threshold voltages were -2 V for the p channel and 15.6 V for the n channel, comparable to those of unipolar OTFTs using C60 or pentacene.

UR - http://www.scopus.com/inward/record.url?scp=28444482735&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=28444482735&partnerID=8YFLogxK

U2 - 10.1063/1.2138810

DO - 10.1063/1.2138810

M3 - Article

AN - SCOPUS:28444482735

VL - 87

SP - 1

EP - 3

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 23

M1 - 233502

ER -